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The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique.The ambipolar diffusion coefficient and carrier life time,which are Da=13.0 cm2/s and τR=1.9 ns,were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature.The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.
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Keywords:
- transient grating /
- quantum well /
- hole transport
[1] Datta S,Das B 1990 Appl.Phys.Lett. 56 665
[2] Awschalom D D,Loss D,Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin: Springer)
[3] Awschalom D D,Flatte M 2007 Nature Physics 3 153
[4] Eichler H J,Günter P,Pohl D W 1986 Laser-Induced Dynamic Gratings (Berlin: Springer-Verlag)
[5] Grivickas V,Netiksis V,Noreika D,Petrauskas M,Willander M,Hasan M A,Ni W X 1990 J.Appl.Phys. 68 617
[6] Huang X R,McCallum D S,Dawso M D,Smirl A L,Boggess T F,Hasenberg T C,Tober R L 1993 J.Appl.Phys. 74 1868
[7] McCallum D S,Cartwright A N,Huang X R,Boggess T F,Smirl A L,Hasenberg T C 1993 J.Appl.Phys. 73 3860
[8] Sūd ius M,Aleksiejūnas R,Jara iūnas K,Verstraeten D,Launay J C 2003 Semicond.Sci.Technol. 18 367
[9] Aleksiejūnas R,Sūd ius M,Malinauskas T,Vaitkus J,Jara iūnas K 2003 Appl.Phys.Lett. 83 1157
[10] Chen F,Cartwright A.N,Lu H,Schaff W J 2005 Appl.Phys.Lett. 87 212104
[11] Hu C C,Wang G,Ye H Q,Liu B L 2010 Acta Phys.Sin. 59 597 (in Chinese) [胡长城、 王 刚、 叶慧琪、 刘宝利 2010 59 597]
[12] Eichler H J,Massmann F 1982 J.Appl.Phys. 53 3237
[13] Liu B L,Zhao H M,Wang J,Liu L S,Wang W X ,Chen D M 2007 Appl.Phys.Lett. 90 112111
[14] Seeger K 1986 Semiconductor Physics (Berlin: Springer)
[15] Cameron A R,Riblet P,Miller A 1996 Phys.Rev.Lett. 76 4793
[16] Young J F,van Driel H M 1982 Phys.Rev. B 26 2147
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[1] Datta S,Das B 1990 Appl.Phys.Lett. 56 665
[2] Awschalom D D,Loss D,Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin: Springer)
[3] Awschalom D D,Flatte M 2007 Nature Physics 3 153
[4] Eichler H J,Günter P,Pohl D W 1986 Laser-Induced Dynamic Gratings (Berlin: Springer-Verlag)
[5] Grivickas V,Netiksis V,Noreika D,Petrauskas M,Willander M,Hasan M A,Ni W X 1990 J.Appl.Phys. 68 617
[6] Huang X R,McCallum D S,Dawso M D,Smirl A L,Boggess T F,Hasenberg T C,Tober R L 1993 J.Appl.Phys. 74 1868
[7] McCallum D S,Cartwright A N,Huang X R,Boggess T F,Smirl A L,Hasenberg T C 1993 J.Appl.Phys. 73 3860
[8] Sūd ius M,Aleksiejūnas R,Jara iūnas K,Verstraeten D,Launay J C 2003 Semicond.Sci.Technol. 18 367
[9] Aleksiejūnas R,Sūd ius M,Malinauskas T,Vaitkus J,Jara iūnas K 2003 Appl.Phys.Lett. 83 1157
[10] Chen F,Cartwright A.N,Lu H,Schaff W J 2005 Appl.Phys.Lett. 87 212104
[11] Hu C C,Wang G,Ye H Q,Liu B L 2010 Acta Phys.Sin. 59 597 (in Chinese) [胡长城、 王 刚、 叶慧琪、 刘宝利 2010 59 597]
[12] Eichler H J,Massmann F 1982 J.Appl.Phys. 53 3237
[13] Liu B L,Zhao H M,Wang J,Liu L S,Wang W X ,Chen D M 2007 Appl.Phys.Lett. 90 112111
[14] Seeger K 1986 Semiconductor Physics (Berlin: Springer)
[15] Cameron A R,Riblet P,Miller A 1996 Phys.Rev.Lett. 76 4793
[16] Young J F,van Driel H M 1982 Phys.Rev. B 26 2147
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