Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate

Liu Mu-Lin; Min Qiu-Ying; Ye Zhi-Qing

doi:10.7498/aps.61.178503

Abstract

InGaN/GaN based light emitting diodes (LEDs) suffer from decrease in efficiency at a high injection current level which is called efficiency droop. In this paper, blue InGaN/GaN multiple quantum well light emitting diodes on Si (111) substrates are prepared, and their electroluminescence spectra are tested. Comparing the experimental measurements with the simulating results based on simple ABC model, the cause for quantum efficiency droop is investigated. The results show that the light emitting diode has worse electron spreading and less hole concentration with temperature decreasing, and the electrons will overflow frome the well after filled up in higher and higher state for their inhomogeneous distribution, thus efficiency droop will happen at a lower injection more severely for electron leakage under lower injection, and experimental measurements are in disagreement with simulation results of Auger recombination at high injection current levels under different temperatures. The results confirm that the main factor for efficiency droop is not Auger nonradiative recombination but electron leakage, and the essential cause for electron leakage is severe carrier localization.

Keywords:

Authors and contacts

1.
School of Material Science and Engineering, Nanchang University, Nanchang 330031, China;
2.
College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60967002).

References

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Cited By

[1]	Mukai T, Yamada M, Nakamura S 1999 Jpn. J. Appl. Phys. 38 3976
[2]	Schubert M F, Chhajed S, Kim J K, Schubert E F, Koleske D D, Crawford M H, Lee S R, Fischer A J, Thaler G, BanasM A 2007 Appl. Phys. Lett. 91 231114
[3]	Chernyakov A E, Sobolev M M, Ratnikov V V, Shmidt N M, Yakimov E B 2009 Superlattices and Microstructures 45 301
[4]	Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R 2007 Appl. Phys. Lett. 91 141101
[5]	Kioupakis E, Rinke P, Delaney K T, Van de Walle C G 2011 Appl. Phys. Lett. 98 161107
[6]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J, Park Y 2007 Appl. Phys. Lett. 91 183507
[7]	Xu J, Schubert M F, Noemaun A N, Zhu D, Kim J K, Schubert E F, Kim M H, Chung H J, Yoon S, Sone C, Park Y 2009 Appl. Phys. Lett. 94 011113
[8]	Vampola K J, Iza M, Keller S, DenBaars S P, Nakamura S 2009 Appl. Phys. Lett. 94 061116
[9]	Piprek J 2010 Phys. Status Solidi A 207 2217
[10]	Özgür Ü, Liu H Y, Li X, Ni X F, Morkoc H 2010 Proceedings of the IEEE 98 1180
[11]	Ryu H Y, Kim H S, Shim J I 2009 Appl. Phys. Lett. 95 081114
[12]	Mo C L, Fang W Q, Pu Y, Liu H C, Jiang F Y 2005 J. Cryst. Growth 285 312
[13]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵, 江风益, 方文卿, 王立, 莫春兰 2008 57 3176]
[14]	Xiong C B, Jiang F Y, Wang L, Fang W Q, Mo C L 2008 Acta Phys. Sin. 57 7861 (in Chinese) [熊传兵, 江风益, 王立, 方文卿, 莫春兰 2008 57 7861]
[15]	Mao Q H, Jiang F Y, Cheng H Y, Zheng C D, 2010 Acta Phys. Sin. 59 8078 (in Chinese) [毛清华, 江风益, 程海英, 郑畅达 2010 59 8078]
[16]	Basu P K 1997 Theory of Optical Processes in Semiconductors: Bulk and Microstructures (Oxford: Oxford University Press) p192, 213, 231
[17]	Zhang M, Bhattacharya P, Singh J, Hinckley J 2009 Appl. Phys. Lett. 95 201108
[18]	Meneghini M, Trivellin N, Meneghesso G, Zanoni E, Zehnder U, Hahn B 2009 Appl. Phys. Lett. 106 114508

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Vol. 61, Issue 17 - 2012-09-05

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