The study on adaptability and effect of mesh-inducing for plasma immersion ion implantation on non-conductor polymer

Huang Yong-Xian; Leng Jin-Song; Tian Xiu-Bo; Lü Shi-Xiong; Li Yao

doi:10.7498/aps.61.155206

Abstract

Plasma immersion ion implantation (PIII) of non-conductor polymer materials is inherently difficult because the voltage across the sheath is reduced by the voltage drop across the insulator due to dielectric capacitance and charge accumulation on the insulator surface. Based on the particle-in-cell (PIC) model, the secondary electron emission (SEE) coefficient is related to the instant energy of implanting ions. Statistical results can be obtained through scouting each ion in the plasma sheath. The evolution of surface potential is simulated for ion implantation on insulator materials. The effects of thickness, dielectric constant and SEE coefficient on the surface bias potential and the effect of mesh-inducing are studied. For thicker non-conductor polymer, it is difficult to achieve omni-directional implantation by self-bias. The mesh-assisted PIII can improve the equivalent surface potential, suppress the emission of secondary electrons and provide an effective way for ion implantation on insulator.

Keywords:

Authors and contacts

1.
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;
2.
Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50904020, 50974046), the Science and Technology Innovation Research Project of Harbin for Young Scholar (Grant No. 2009RFQXG050), the Fundamental Research Funds for the Central Universities (Grant No. HIT. NSRIF. 2012007), and the China Postdoctoral Science Foundation (Grant Nos. 20090460883, 201003419).

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[22]	Liu C S, Han H Y, Peng X Q, Chang Y, Wang Y, Wang D Z 2010 Chin. Phys. B 19 035201
[23]	Bogaerts A, Gijbels R 2002 Plasma Sources Sci. Technol. 11 27
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[26]	Sheridan T E 2000 Acta Metall. Sin. 13 611
[27]	Fu R K Y, Fu K L 2004 J. Vac. Sci. Technol. A 22 356
[28]	Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507
[29]	Rothard H, Moshammer R, Ullrich J, Kollmus H, Mann R, Hagmann S, Zouros T J M 2007 Nucl. Instrum. Methods Phys. Res. B 258 91
[30]	Kostov K G, Ueda M, Tan I H, Leite N F, Beloto A F, Gomes G F 2004 Surf. Coat. Techn. 186 287
[31]	Lim H, Lee Y, Han S, Kim Y, Cho J, Kim K J 2002 Surf. Coat. Techn. 160 158

Cited By

[1]	Ferrante D, Iannace S, Monetta T 1999 J. Mater. Sci. 34 175
[2]	Kwok D T K 2006 IEEE Trans. Plasma Sci. 34 1059
[3]	Riccardi C, Barni R, Selli E, Mazzone G, Massafra M R, Marcandalli B, Poletti G 2003 Appl. Surf. Sci. 211 386
[4]	Zhang D C, Shen Y Y, Huang Y J, Wang Z, Liu C L 2010 Acta Phys. Sin. 59 7974 (in Chinese) [张大成, 申艳艳, 黄元杰, 王卓, 刘昌龙 2010 59 7974]
[5]	Hu X J, Hu H, Chen X H, Xu B Acta Phys. Sin. 60 068101 (in Chinese) [胡晓君, 胡衡, 陈小虎, 许贝 2011 60 068101]
[6]	Zhang Y, Zhang C H, Zhou L H, Li B S, Yang Y T 2010 Acta Phys. Sin. 59 4130 (in Chinese) 张勇, 张崇宏, 周丽宏, 李炳生, 杨义涛 2010 59 4130]
[7]	Oates T W H, Bilek M M M 2002 J. Appl. Phys. 92 2980
[8]	Fu R K Y, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[9]	Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Techn. 135 268
[10]	Tian X B, Fu R KY, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[11]	Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Techn. 19 045002
[12]	Kondyurin A, Gan B K, Bilek M M M, Mizuno K, McKenzie D R 2006 Nucl. Instrum. Methods Phys. Res. B 251 413
[13]	Emmert G A 1994 J. Vac. Sci. Technol. B 12 880
[14]	Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[15]	Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[16]	Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[17]	Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[18]	Huang Y X, Tian X B, Yang S Q, Fu Ricky, Chu K Paul 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R K Y, Chu K P 2007 56 4762]
[19]	Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 57 6450]
[20]	Verboncoeur J P 2005 Plasma Phys. Contr. F 47 A231
[21]	Wang P, Tian X B, Wang Z J, Gong C Z, Yang S Q 2011 Acta Phys. Sin. 60 085206 (in Chinese) [王蓬, 田修波, 汪志键, 巩春志, 杨士勤 2010 60 085206]
[22]	Liu C S, Han H Y, Peng X Q, Chang Y, Wang Y, Wang D Z 2010 Chin. Phys. B 19 035201
[23]	Bogaerts A, Gijbels R 2002 Plasma Sources Sci. Technol. 11 27
[24]	Song Y H, Gong Y, Wang D Z 1995 Chinese J. Comput. Phys. 12 528 (in Chinese) [宋远红, 宫野, 王德真 1995 计算物理 12 528]
[25]	Kwok D T K, Chu P K, Chun C 1998 IEEE Trans. Plasma Sci. 26 1669
[26]	Sheridan T E 2000 Acta Metall. Sin. 13 611
[27]	Fu R K Y, Fu K L 2004 J. Vac. Sci. Technol. A 22 356
[28]	Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507
[29]	Rothard H, Moshammer R, Ullrich J, Kollmus H, Mann R, Hagmann S, Zouros T J M 2007 Nucl. Instrum. Methods Phys. Res. B 258 91
[30]	Kostov K G, Ueda M, Tan I H, Leite N F, Beloto A F, Gomes G F 2004 Surf. Coat. Techn. 186 287
[31]	Lim H, Lee Y, Han S, Kim Y, Cho J, Kim K J 2002 Surf. Coat. Techn. 160 158

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Vol. 61, Issue 15 - 2012-08-05

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