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In this paper, a flat-type surface wave plasma (SWP) source generated by microwave discharg is introduced systematically. The principle of the surface wave plasma is analyzed and the energy absorption mechanism of the surface wave plasma discharge is explored. A novel wave-mode converter composed of the single-mode resonator array, sub-wavelength diffraction grating and a new type of slot antenna array is introduced. The research findings, such as the mechanism of the generation, the realization, the characteristics of plasma parameters and the numerical simulation of the new SWP sources are beneficial to industrial applications, will promote the effectiveness of the microelectronics industry and obtain a new breakthrough.
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Keywords:
- surface wave /
- plasma /
- surface plasmon polariton /
- discharging of the microwave
[1] Sugai H, Ghanashev I, Nagatsu M 1998 Plasma Sources Sci. Technol. 7 192
[2] Sugai H (Translated by Zhang H B, Zhang D) 2002 Plasma Electric Engineering Science (Beijing: Science Press) pp56-60, pp134-145 (in Chinese) [菅井秀郎著, 张海波, 张丹译 2002 等离子体电子工程学 (北京:科学出版社) 第56—60页, 第134—145页]
[3] Ganachev I, Sugai H 2003 Surface and Coatings Technology 174-175 15
[4] Odrobina I, Kudela J, Kando M 1998 Plasma Sources Sci. Technol. 7 238
[5] Sugai H, Ahn T H, Ghanashev I, Goto M, Nagatsu M, Nakamura K, Suzuki K, Toyoda H 1997 Plasma Phys. Control. Fusion 39 A445
[6] Nagatsu M, Morita S, Ghanashev I, Ito A, Toyoda N , Sugai H 2000 J. Phys. D: Appl. Phys. 33 1143
[7] Yasaka Y, Hojo H 2000 Phys. Plasmas 7 1601
[8] Ghanashev I, Nagatsu M, Morita S, Sugai H 1998 J. Vac. Sci. Technol. A 16 1537
[9] Yamauchi T, Aoki K, Kanoh M 2001 J. Vac. Sci. Technol. A 19 2433
[10] Nagatsu M, Xu G, Ghanashev I, Kanoh M , Sugai H 1997 Plasma Sources Sci. Technol. 6 427
[11] Ghanashev I, Nagatsu M, Xu G, Sugai H 1997 Jpn. J. Appl. Phys. 36 4704
[12] Ghanashev I, Sugai H 2000 Phys. Plasmas 7 3051
[13] Nagatsu M, Xu G, Yamage M, Kanoh M, Sugai H 1996 Jpn. J. Appl. Phys. 35 L341
[14] Kousaka H, Ono K, Umehara N, Sawada I, Ishibashi K 2006 Thin Solid Films 506-507 503
[15] Nagatsu M, Ghanashev I, Sugai H 1998 Plasma Sources Sci. Technol. 7 230
[16] Nagatsu M, Naito K, Ogino A, Nanko S 2006 Plasma Sources Sci. Technol. 15 37
[17] Ghanashev I, Nagatsu M, Sugai H 1997 Jpn. J. Appl. Phys. 36 337
[18] Kudela J, Terebessy T, Odrobina I, Kando M 2002 Appl. Phys. Lett. 80 1132
[19] Sugai H, Ghanashev I, Mizuno K 2002 Appl. Phys. Lett. 77 3523
[20] Tatarova E, Dias F M, Henriques J, Ferreira C M 2005 IEEE Trans. Plasma Sci. 33 866
[21] Henriques J, Tatarova E, Dias F M 2008 J. Appl. Phys. 103 103304
[22] Wu T J, Kou C S 1999 Rev. Sci. Instrum. 70 2331
[23] Wu T J, Kou C S 2005 Phys. Plasmas 12 103504
[24] Wu T J, Guan W J, Tsai C M, Yeh W Y, Kou C S 2001 Phys. Plasmas 8 3195
[25] Zhang J H, Wei H W, Weng Z H, Liu K Q, Li A P, Kou C S, Wu M W, Zeng J Q, Cai W F, Zheng G C 2006 Phys. Bimonthly 28 440 (in Chinese) [张家豪, 魏鸿文, 翁政辉, 柳克强, 李安平, 寇崇善, 吴敏文, 曾锦清, 蔡文发, 郑国川 2006 物理雙月刊(台湾) 28 440]
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[44] Trivelpiece A W, Gould R W 1959 J. Appl. Phys. 30 1784
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[46] Shivarova A, Zhelyazkov I 1978 Plasma Phys. 20 1049
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[48] Moisan M, Zakrzewski Z, Pantel R, Leprince P 1984 IEEE Trans. Plasma Sci. PS-12 203
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[51] Moisan M, Beaudry C, Leprince P 1975 IEEE Trans. Plasma Sci. PS-3 55
[52] Zakrzewski Z, Moisan M, Glaude V M N, Beaudry C, Leprince P 1977 Plasma Phys. 19 77
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[64] Miyamoto Y, Tamai Y, Daimon K, Esaki M, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 622
[65] Tsuji A, Yasaka Y, Takeno H 2008 Surface & Coatings Technol. 202 5306
[66] Tamai Y, Miyamoto Y, Hayashi T, Tsuji A, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 626
[67] Jain A P, Parashar J 2005 J. Phys. 65 311
[68] Sugai H, Ghanashev I, Hosokawa M, Mizuno K, Nakamura K, Toyoda H, Yamauchi K 2001 Plasma Sources Sci. Technol. 10 378
[69] Kumar G, Tripathi V K 2008 Phys. Plasmas 15 073504
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[71] Aramaki M, Kobayashi J, Kono A, Stamate E, Sugai H 2006 Thin Solid Films 506-507 679
[72] Hotta Y, Toyoda H, Sugai H 2007 Thin Solid Films 515 4983
[73] Stamate E, Holtzer N, Sugai H 2006 Thin Solid Films 506-507 571
[74] Siry M, Sakata S, Terebessy T, Kando M 2006 Jpn. J. Appl. Phys. 45 2749
[75] Nakao S, Stamate E, Sugai H 2007 Thin Solid Films 515 4869
[76] Mezerette D, Kuroda M, Sugai H 2005 Thin Solid Films 475 178
[77] Takagi Y, Gunjo Y, Toyoda H, Sugai H 2008 Vacuum 83 501
[78] Ganachev I P, Sugai H 2005 Surface & Coatings Technol. 200 792
[79] Hara Y, Takashima S, Yamakawa K, Den S, Toyoda H, Hori M 2007 Appl. Phys. Lett. 91 231502
[80] Hara Y, Takashima S, Yamakawa K, Den S, Toyoda H, Sekine M, Hori M 2008 J. Appl. Phys. 103 053301
[81] Bowers K J 2001 Ph. D. Dissertation (Berkeley: University of California)
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[95] Chen Z Q, Liu M H, Tang L, Hu P, Hu X W 2009 J. Appl. Phys. 106 013314
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[97] Chen Z Q, Liu M H, Hong L L, Zhou Q Y, Cheng L L, Hu X W 2011 Phys. Plasmas 18 013505
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[1] Sugai H, Ghanashev I, Nagatsu M 1998 Plasma Sources Sci. Technol. 7 192
[2] Sugai H (Translated by Zhang H B, Zhang D) 2002 Plasma Electric Engineering Science (Beijing: Science Press) pp56-60, pp134-145 (in Chinese) [菅井秀郎著, 张海波, 张丹译 2002 等离子体电子工程学 (北京:科学出版社) 第56—60页, 第134—145页]
[3] Ganachev I, Sugai H 2003 Surface and Coatings Technology 174-175 15
[4] Odrobina I, Kudela J, Kando M 1998 Plasma Sources Sci. Technol. 7 238
[5] Sugai H, Ahn T H, Ghanashev I, Goto M, Nagatsu M, Nakamura K, Suzuki K, Toyoda H 1997 Plasma Phys. Control. Fusion 39 A445
[6] Nagatsu M, Morita S, Ghanashev I, Ito A, Toyoda N , Sugai H 2000 J. Phys. D: Appl. Phys. 33 1143
[7] Yasaka Y, Hojo H 2000 Phys. Plasmas 7 1601
[8] Ghanashev I, Nagatsu M, Morita S, Sugai H 1998 J. Vac. Sci. Technol. A 16 1537
[9] Yamauchi T, Aoki K, Kanoh M 2001 J. Vac. Sci. Technol. A 19 2433
[10] Nagatsu M, Xu G, Ghanashev I, Kanoh M , Sugai H 1997 Plasma Sources Sci. Technol. 6 427
[11] Ghanashev I, Nagatsu M, Xu G, Sugai H 1997 Jpn. J. Appl. Phys. 36 4704
[12] Ghanashev I, Sugai H 2000 Phys. Plasmas 7 3051
[13] Nagatsu M, Xu G, Yamage M, Kanoh M, Sugai H 1996 Jpn. J. Appl. Phys. 35 L341
[14] Kousaka H, Ono K, Umehara N, Sawada I, Ishibashi K 2006 Thin Solid Films 506-507 503
[15] Nagatsu M, Ghanashev I, Sugai H 1998 Plasma Sources Sci. Technol. 7 230
[16] Nagatsu M, Naito K, Ogino A, Nanko S 2006 Plasma Sources Sci. Technol. 15 37
[17] Ghanashev I, Nagatsu M, Sugai H 1997 Jpn. J. Appl. Phys. 36 337
[18] Kudela J, Terebessy T, Odrobina I, Kando M 2002 Appl. Phys. Lett. 80 1132
[19] Sugai H, Ghanashev I, Mizuno K 2002 Appl. Phys. Lett. 77 3523
[20] Tatarova E, Dias F M, Henriques J, Ferreira C M 2005 IEEE Trans. Plasma Sci. 33 866
[21] Henriques J, Tatarova E, Dias F M 2008 J. Appl. Phys. 103 103304
[22] Wu T J, Kou C S 1999 Rev. Sci. Instrum. 70 2331
[23] Wu T J, Kou C S 2005 Phys. Plasmas 12 103504
[24] Wu T J, Guan W J, Tsai C M, Yeh W Y, Kou C S 2001 Phys. Plasmas 8 3195
[25] Zhang J H, Wei H W, Weng Z H, Liu K Q, Li A P, Kou C S, Wu M W, Zeng J Q, Cai W F, Zheng G C 2006 Phys. Bimonthly 28 440 (in Chinese) [张家豪, 魏鸿文, 翁政辉, 柳克强, 李安平, 寇崇善, 吴敏文, 曾锦清, 蔡文发, 郑国川 2006 物理雙月刊(台湾) 28 440]
[26] Wu T J 2001 Ph. D. Dissertation (Taiwan Xinzhu: Qinghua University) (in Chinese) [吴仓聚 2001 博士学位论文 (台湾新竹:国立清华大学)]
[27] Xu X, Liu F, Zhou Q H, Liang B, Liang Y Z, Liang R Q 2008 Appl. Phys. Lett. 92 011501
[28] Wu C F, Zhan R J, Wen X H, Huang W D 2001 IEEE Trans. Plasma Sci. 29 13
[29] Liang Y Z, Ou Q R, Liang B, Liang R Q 2008 Chin. Phys. Lett. 25 1761
[30] Liang B, Ou Q R, Liang Y Z, Liang R Q 2007 Chin. Phys. 16 3732
[31] Zhan R J, Wu C F, Wen X H, Zhu X D, Zhou H Y 2011 Vacuum Science and Technology 21 30 (in Chinese) [詹如娟, 吴丛风, 温小辉, 朱晓东, 周海洋 2001 真空科学与技术 21 30]
[32] Wu C F, Wen X H, Zhan R J 1998 J. Microw. 14 147 (in Chinese) [吴从风, 温小辉, 詹如娟 1998 微波学报 14 147]
[33] Ou Q R, Liang R Q 2002 Vacuum & Cryogenics 8 28 (in Chinese) [欧琼荣, 梁荣庆 2002 真空与低温 8 28]
[34] Nie C H, Su X B 2000 Vacuum & Cryogenics 6 111 (in Chinese) [聂传辉, 苏小保 2000 真空与低温 6 111]
[35] Liu M H, Sugai H, Hu X W, Ishijima T, Jiang Z H, Li B, Dan M 2006 Acta Phys. Sin. 55 5905 (in Chinese) [刘明海, 菅井秀郎, 胡希伟, 石岛芳夫, 江中和, 李斌, 但敏 2006 55 5905]
[36] Chen Z Q, Liu M H, Zhou P Q, Chen W, Lan C H, Hu X W 2008 Plasma Sci. Technol. 10 655
[37] Lan C H, Hu X W, Liu M H 2009 Chin. Phys. Lett. 26 035204
[38] Lan C H, Chen Z Q, Liu M H, Jiang Z H, Hu X W 2009 Plasma Sci. Technol. 11 66
[39] Chen Z Q, Liu M H, Lan C H, Chen W, Luo Z Q, Hu X W 2008 Chin. Phys. Lett. 25 4333
[40] Lan C H, Hu X W, Jiang Z H, Liu M H 2010 Acta Phys. Sin. 59 4093 (in Chinese) [蓝朝辉, 胡希伟, 江中和, 刘明海 2010 59 4093]
[41] Lan C H, Hu X W, Liu M H 2011 Acta Phys. Sin. 60 025205 (in Chinese) [蓝朝辉, 胡希伟, 刘明海 2011 60 025205]
[42] Chen F F (Translated by Lin G H) 1980 Introduction to Plasma Physics (Beijing: People's Education Press) pp2-11 (in Chinese) [Chen F F著, 林光海译 1980 等离子体物理学导论 (北京:人民教育出版社) 第2—11页]
[43] Ma T C, Hu X W, Chen Y H 1988 The Principle of Plasma Physics (Hefei: University of Science and Technology of China Press) pp20-76 (in Chinese) [马腾才, 胡希伟, 陈银华 1988 等离子体物理原理 (合肥:中国科技大学出版社) 第20—76页]
[44] Trivelpiece A W, Gould R W 1959 J. Appl. Phys. 30 1784
[45] Moisan M 1974 Plasma Phys. 16 1
[46] Shivarova A, Zhelyazkov I 1978 Plasma Phys. 20 1049
[47] Moisan M, Zakrzewski Z, Pantel R 1979 J. Phys. D: Appl. Phys. 12 219
[48] Moisan M, Zakrzewski Z, Pantel R, Leprince P 1984 IEEE Trans. Plasma Sci. PS-12 203
[49] Moisan M, Zakrzewski Z 1991 J. Phys. D: Appl. Phys. 24 1025
[50] Moisan M, Beaudry C, Leprince P 1974 Phys. Lett. 50A 125
[51] Moisan M, Beaudry C, Leprince P 1975 IEEE Trans. Plasma Sci. PS-3 55
[52] Zakrzewski Z, Moisan M, Glaude V M N, Beaudry C, Leprince P 1977 Plasma Phys. 19 77
[53] Moisan M, Shivarova A, Trivelpiece A W 1982 Plasma Phys. 24 1331
[54] Moisan M 1987 Rev. Sci. Instrum. 58 1895
[55] Margot J, Moisan M 1993 J. Plasma Phys. 49 357
[56] Tian C, Nozawa T, Ishibasi K, Kameyama H, Morimoto T 2006 J. Vac. Sci. Technol. A 24 1421
[57] Yasaka Y, Ishii N, Yamamoto T, Ando M, Takahashi M 2004 IEEE Trans. Plasma Sci. 32 101
[58] Yamamoto T, Ono M, Ando M, Ando M, Goto N, Ishii N, Yasaka Y 2001 Jpn. J. Appl. Phys. 40 380
[59] Yasaka Y, Koga K, Ishii N, Yamamoto T, Ando M, Takahashi M 2002 Phys. Plasmas 9 1029
[60] Yasaka Y, Nozaki D, Koga K, Ando M, Yamamoto T, Goto N, Ishii N, Morimoto T 1999 Plasma Sources Sci. Technol. 8 530
[61] Nagatsu M, Terashita F, Nonaka H, Xu L, Nagata Y, Koide Y 2005 Appl. Phys. Lett. 86 211502
[62] Xu L, Terashita F, Nonaka1 H, Ogino A, Nagata T, Koide Y, Nanko S, Kurawaki I, Nagatsu M 2006 J. Phys. D: Appl. Phys. 39148
[63] Moreau S, Moisan M, Tabrizian M, Barbeau J, Pelletier J, Ricard A, Yahia L H 2000 J. Appl. Phys. 88 1166
[64] Miyamoto Y, Tamai Y, Daimon K, Esaki M, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 622
[65] Tsuji A, Yasaka Y, Takeno H 2008 Surface & Coatings Technol. 202 5306
[66] Tamai Y, Miyamoto Y, Hayashi T, Tsuji A, Takeno H, Yasaka Y 2006 Thin Solid Films 506-507 626
[67] Jain A P, Parashar J 2005 J. Phys. 65 311
[68] Sugai H, Ghanashev I, Hosokawa M, Mizuno K, Nakamura K, Toyoda H, Yamauchi K 2001 Plasma Sources Sci. Technol. 10 378
[69] Kumar G, Tripathi V K 2008 Phys. Plasmas 15 073504
[70] Levaton J, Ricard A, Henriques J, Silva H R T, Amorim J 2006 J. Phys. D: Appl. Phys. 39 3285
[71] Aramaki M, Kobayashi J, Kono A, Stamate E, Sugai H 2006 Thin Solid Films 506-507 679
[72] Hotta Y, Toyoda H, Sugai H 2007 Thin Solid Films 515 4983
[73] Stamate E, Holtzer N, Sugai H 2006 Thin Solid Films 506-507 571
[74] Siry M, Sakata S, Terebessy T, Kando M 2006 Jpn. J. Appl. Phys. 45 2749
[75] Nakao S, Stamate E, Sugai H 2007 Thin Solid Films 515 4869
[76] Mezerette D, Kuroda M, Sugai H 2005 Thin Solid Films 475 178
[77] Takagi Y, Gunjo Y, Toyoda H, Sugai H 2008 Vacuum 83 501
[78] Ganachev I P, Sugai H 2005 Surface & Coatings Technol. 200 792
[79] Hara Y, Takashima S, Yamakawa K, Den S, Toyoda H, Hori M 2007 Appl. Phys. Lett. 91 231502
[80] Hara Y, Takashima S, Yamakawa K, Den S, Toyoda H, Sekine M, Hori M 2008 J. Appl. Phys. 103 053301
[81] Bowers K J 2001 Ph. D. Dissertation (Berkeley: University of California)
[82] Cooperberg D J, Birdsall C K 1998 Plasma Sources Sci. Technol. 7 41
[83] Schlüter H, Shivarova A 2007 Phys. Reports 443 121
[84] Chen Q, Aoyagi P H, Katsurai M 1999 IEEE Trans. Plasma Sci. 27 164
[85] Toba T, Katsurai M 2002 IEEE Trans. Plasma Sci. 30 2095
[86] Igarashi H, Watanabe K, Ito T, Fukuda T, Honma T 2004 IEEE Trans. Plasma Sci. 30 605
[87] Okamura Y, Yamamoto Y, Fujita K, Miyoshi T, Teramoto K, Kawaguchi H, Kagami S, Furukawa M 2007 J. Vac. Sci. Technol. A 25 816
[88] Nagatsu M, Naito K, Ogino A, Ninomiya K, Nanko S 2005 Appl. Phys. Lett. 87 161501
[89] Kousaka H, Ono K 2002 Jpn. J. Appl. Phys. 41 2199
[90] Denysenko I B, Gapon A V, Azarenkov N A, Ostrikov K N, Yu M Y 2002 Phys. Rev. E 65 046419
[91] Hassouni K, Grotjohn T A, Gicquel A 1999 J. Appl. Phys. 86 134
[92] Chen Z, Liu M H, Lan C H, Chen W, Tang L, Luo Z Q, Yan B R, Lü J H, Hu X W 2009 Chin. Phys. B 18 3484
[93] Lan C H, Lan C Z, Hu X W, Chen Z Q, Liu M H 2009 Chin. Phys. B 18 2412
[94] Graf M, Rauchle E, Urban H, Kaiser M, Alberts L, Emmerich R, Elsner P 2005 Surface & Coatings Technol. 200 904
[95] Chen Z Q, Liu M H, Tang L, Hu P, Hu X W 2009 J. Appl. Phys. 106 013314
[96] Chen Z Q, Liu M H, Tang L, Lü J H, Wen Y F, Hu X W 2009 J. Appl. Phys. 106 063304
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