气体压强及表面等离激元影响表面波等离子体电离发展过程的粒子模拟

陈兆权; 夏广庆; 刘明海; 郑晓亮; 胡业林; 李平; 徐公林; 洪伶俐; 沈昊宇; 胡希伟

doi:10.7498/aps.62.195204

摘要

基于表面等离激元 (SPP) 的表面波等离子体 (SWP) 源, 具有高密度、低温度及高产率等优异性能, 其应用在电子器件微纳加工、材料改性等领域. 但由于SPP激励SWP放电的电离过程难于用理论分析和实验测量描述, 因而SWP源均匀稳定产生的电离发展过程一直未研究清晰. 本文以SWP放电的数值模拟为研究手段, 采用等离子体与电磁波相互作用的粒子模拟 (PIC) 方法, 结合蒙特卡罗碰撞 (MCC) 方法处理碰撞效应的优势, 研究气体压强影响电离过程的电磁能量耦合机理. 模拟结果表明SWP的高效产生是SPP的局域增强电场致使, 气体压强能够改变波模共振转换的出现时刻而影响了SWP的电离发展过程. 本文的研究成果展示了SPP维持SWP放电的电离过程, 可为下一代米级SWP源的参数优化提供设计建议.

关键词:

Abstract

A surface-wave plasma (SWP) source based on surface plasmon polariton (SPP) has fine performances such as high density, low temperature, high production, and so on. It is applied in electronic device micro or nano processing, material modification, etc. Because the ionization of SWP heated by SPP is difficult to describe by theoretical analysis and experimental measurement, the ionization process of producing uniform stable SWP source is not yet well understood. The method in this paper is a numerical simulation of SWP discharges. The electromagnetic energy coupling mechanism of ionization process, influenced by gas pressure, which is studied by combining particle-in-cell (PIC) simulation of reciprocity between plasma and electromagnetic wave with Monte Carlo Collide (MCC) method in merit of dealing with particle collision. Simulated results suggest that the efficient production of SWP is induced by locally enhanced electric field of SPP, and the gas pressure influences the ionization process of SWP by altering the appearance time of wave-mode resonant conversion. Results of this paper show the ionization process of SWP discharge maintained by SPP, and further provide some advices for designing the parameter optimization of next generation meter-scale SWP source.

Keywords:

作者及机构信息

1.
安徽理工大学, 电气与信息工程学院, 电磁新装置研究室, 淮南 232001;

2.
大连理工大学, 工业装备结构分析国家重点实验室, 大连 116024;

3.
华中科技大学, 强电磁工程与新技术国家重点实验室, 武汉 430074

基金项目: 国家自然科学基金(批准号:11105002);工业装备结构分析国家重点实验室开放基金(批准号:GZ1215);安徽高校省级自然科学研究项目(批准号:KJ2013A106);国家大学生创新训练计划项目(批准号:201210361058)和安徽理工大学博士科研启动基金资助的课题.

Authors and contacts

1.
College of Electrical & Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;

2.
State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China;

3.
State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

Funds: Project supported by the NationalNatural Science Foundation of China (Grant No. 11105002), the Open-End Fund of State Key Laboratory of Structural Analysis for Industrial Equipment (Grant No. GZ1215), the Natural Science Foundation for University in Anhui Province, China (Grant No. KJ2013A106), the Education Project of Creation and Innovation for College Students in China (Grant No. 201210361058), and the Doctoral Scientific Research Fund of AUST.

参考文献

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[38]	Chen Z, Liu M, Tang L, Lv J, Hu X 2010 Chin. Phys. Lett. 27 025205
[39]	Chen Z, Liu M, Hong L, Zhou Q, Cheng L, Hu X 2011 Phys. Plasmas 18 013505
[40]	Chen Z, Ye Q, Xia G, Hong L, Hu Y, Zheng X, Li P, Zhou Q, Hu X, Liu M 2013 Phys. Plasmas 20 033502
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施引文献

[1]	Sugai H, Ghanashev I, Nagatsu M 1998 Plasma Sources Sci. Technol. 7 192
[2]	Nagatsu M, Naito K, Ogino A, Nanko S 2006 Plasma Sources Sci. Technol. 15 37
[3]	Tian C, Nozawa T, Ishibasi K, Kameyama H, Morimoto T 2006 J. Vac. Sci. Technol. A 24 1421
[4]	Yasaka Y, Ishii N, Yamamoto T, Ando M, Takahashi M 2004 IEEE Trans. Plasma Sci. 32 101
[5]	Nagatsu M, Terashita F, Nonaka H, Xu L, Nagata T, Koide Y 2005 Appl. Phys. Lett. 86 211502
[6]	Xu L, Terashita F, Nonaka H, Ogino A, Nagata T, Koide Y, Nanko S, Kurawaki I, Nagatsu M 2006 J. Phys. D: Appl. Phys. 39 148
[7]	Kousaka H, Ono K, Umehara N, Sawada I, Ishibashi K 2006 Thin Solid Films 506-507 503
[8]	Wu T, Kou C 2005 Phys. Plasmas 12 103504
[9]	Xu X, Liu F, Zhou Q, Liang B, Liang Y, Liang R 2008 Appl. Phys. Lett. 92 011501
[10]	Wu C, Zhan R, Wen X, Huang W 2001 IEEE Trans. Plasma Sci. 29 13
[11]	Liang Y, Ou Q, Liang B, Liang R 2008 Chin. Phys. Lett. 25 1761
[12]	Liang B, Ou Q, Liang Y, Liang R 2007 Chin. Phys. 16 3732
[13]	Hu Y, Chen Z, Liu M, Hong L, Li P, Zheng X, Xia G, Hu X 2011 Chin. Phys. Lett. 28 115201
[14]	Chen Z, Liu M, Zhou Q, Hu Y, Yang A, Zhu L, Hu X 2011 Chin. Phys. Lett. 28 045201
[15]	Liu M, Sugai H, Hu X, Ishijima T, Jiang Z, Li B, Dan M 2006 Acta. Phys. Sin. 55 5905 (in Chinese) [刘明海, 菅井秀郎, 胡希伟, 石岛芳夫, 江中和, 李斌, 但敏 2006 55 5905]
[16]	Chen Z, Liu M, Zhou P, Chen W, Lan C, Hu X 2008 Plasma Sci. Technol. 10 655
[17]	Chen Z, Liu M, Tang L, Hu P, Hu X 2009 J. Appl. Phys. 106 013314
[18]	Chen Z, Liu M, Tang L, Lv J, Wen Y, Hu X2009 J. Appl. Phys. 106 063304
[19]	Chen Z, Liu M, Lan C, Chen W, Luo Z, Hu X 2008 Chin. Phys. Lett. 25 4333
[20]	Chen Q, Aoyagi P H, Katsurai M 1999 IEEE Trans. Plasma Sci. 27 164
[21]	Toba T, Katsurai M 2002 IEEE Trans. Plasma Sci. 30 2095
[22]	Okamura Y, Yamamoto Y, Fujita K, Miyoshi T, Teramoto K, Kawaguchi H, Kagami S, Furukawa M 2007 J. Vac. Sci. Technol. A 25 816
[23]	Nagatsu M, Naito K, Ogino A, Ninomiya K, Nanko S 2005 Appl. Phys. Lett. 87 161501
[24]	Tatarova E, Dias F M, Henriques J, Ferreira C M 2005 IEEE Trans. Plasma Sci. 33 866
[25]	Henriques J, Tatarova E, Dias F M 2008 J. Appl. Phys. 103 103304
[26]	Chen Z, Liu M, Lan C, Chen W, Tang L, Luo Z, Yan B, Lv J, Hu X 2009 Chin. Phys. B 18 3484
[27]	Lan C, Lan C, Hu X, Chen Z, Liu M 2009 Chin. Phys. B 18 2412
[28]	Lan C, Chen Z, Liu M, Jiang Z, Hu X 2009 Plasma Sci. Technol. 11 66
[29]	Lan C, Hu X, Liu M 2011 Acta. Phys. Sin. 60 025205 (in Chinese) [蓝朝晖, 胡希伟, 刘明海 2011 60 025205]
[30]	Jin X, Yang Z, Huang T 2007 Phys. Plasmas 14 113505
[31]	Jin X, Huang T, Liao P, Yang Z 2009 Acta. Phys. Sin. 58 5526 (in Chinese) [金晓林, 黄桃, 廖平, 杨中海 2009 58 5526]
[32]	Liu M, Hu X, Yu G, Wu Q, Pan Y 2002 Plasma Sources Sci. Technol. 11 260
[33]	Boeuf J P, Chaudhury B, Zhu G 2010 Phys. Rev. Lett. 104 015002
[34]	Zhu G, Boeuf J P, Li J 2012 Acta. Phys. Sin. 61 235202 (in Chinese) [朱国强, Jean-Pierre Boeuf, 李进贤 2012 61 235202]
[35]	Zhou Q, Dong Z, Chen J 2011 Acta. Phys. Sin. 60 125202 (in Chinese) [周前红, 董志伟, 陈京元 2011 60 125202]
[36]	Yang J, Shi F, Yang T, Meng Z 2010 Acta. Phys. Sin. 59 8701 (in Chinese) [杨涓, 石峰, 杨铁链, 孟志强 2010 59 8701]
[37]	Chen M, Mao G, Xia G, Yang J, Sun A 2012 Propulsion Technology 33 150 (in Chinese) [陈茂林, 毛根旺, 夏广庆, 杨涓, 孙安邦 2012 推进技术 33 150]
[38]	Chen Z, Liu M, Tang L, Lv J, Hu X 2010 Chin. Phys. Lett. 27 025205
[39]	Chen Z, Liu M, Hong L, Zhou Q, Cheng L, Hu X 2011 Phys. Plasmas 18 013505
[40]	Chen Z, Ye Q, Xia G, Hong L, Hu Y, Zheng X, Li P, Zhou Q, Hu X, Liu M 2013 Phys. Plasmas 20 033502
[41]	Chen Z, Liu M, Xia G, Huang Y 2012 IEEE Trans. Plasma Sci. 40 2861
[42]	Chen Z, Xia G, Zhou Q, Hu Y, Zheng X, Zhen Z, Hong L, Li P, Huang Y 2012 Rev. Sci. Instrum. 83 084701
[43]	Dong T, Ye K, Liu W 2012 Acta. Phys. Sin. 61 145202 (in Chinese) [董太源, 叶坤涛, 刘维清 2012 61 145202]

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