Particle-in-cell simulation on surface-wave discharge process influenced by gas pressure and negative-biased voltage along ion sheath layer

Chen Zhao-Quan; Yin Zhi-Xiang; Chen Ming-Gong; Liu Ming-Hai; Xu Gong-Lin; Hu Ye-Lin; Xia Guang-Qing; Song Xiao; Jia Xiao-Fen; Hu Xi-Wei

doi:10.7498/aps.63.095205

Abstract

Due to surface electromagnetic waves propagating along the dielectric-plasma interface, the application of surface-wave plasma (SWP) is limited in view of the fact that it is very difficult to realize metal sputtering by using negative-biased voltage in traditional SWP sources. Recently, this problem is overcome by a type of SWP source based on the guided wave in ion sheath layer driven by negative-biased voltage. And the plasma heating mechanism is originated from gas discharges excited by the local-enhanced electric field of surface plasmon polariton (SPP). However, the best discharge condition is not obtained because the influence factors affecting the discharge process studied is not clear. In this paper, the discharge mechanism of SWP ionization process influenced by gas pressure and negative-biased voltage along the ion sheath layer is investigated. The simulation method is by means of combining particle-in-cell (PIC) with Monte Carlo collision (MCC). Simulated results suggest that the values of negative-biased voltage and gas pressure can influence the thickness of ion sheath layer, the excitation of SPP, and the spatio-temporal conversion of wave mode, which further induces the different discharge performances. Moreover, the discussed analysis states that a better discharge performance can be obtained when approximately a negative-biased voltage of -200 V and a gas pressure of 40 Pa applied.

Keywords:

Authors and contacts

1.
College of Electrical & Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;
2.
State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;
3.
State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11105002), the Open-End Fund of State Key Laboratory of Structural Analysis for Industrial Equipment, China (Grant No.GZ1215), the Natural Science Foundation for University in Anhui Province, China (Grant No. KJ2013A106), the Natural Science Foundation in Anhui Provice (Grant Nos. 1408085QA16, 1408085ME101), and the Open-End Fund of State Key Laboratory of Advanced Electromagnetic Engineering and Technology (Huazhong University of Science and Technology).

References

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[21]	Chen Z, Ye Q, Xia G, Hong L, Hu Y, Zheng X, Li P, Zhou Q, Hu X, Liu M 2013 Phys. Plasmas 20 033502
[22]	Chen Z, Liu M, Xia G, Huang Y 2012 IEEE Trans. Plasma Sci. 40 2861
[23]	Chen Z, Xia G, Zhou Q, Hu Y, Zheng X, Zhen Z, Hong L, Li P, Huang Y 2012 Rev. Sci. Instrum. 83 084701
[24]	Chen Z, Xia G, Liu M, Zheng X, Hu Y, Li P, Xu G, Hong L, Sheng H, Hu X W 2013 Acta Phys. Sin. 62 195204 (in Chinese)[陈兆权, 夏广庆, 刘明海, 郑晓亮, 胡业林, 李平, 徐公林, 洪伶俐, 沈昊宇, 胡希伟 2013 62 195204]
[25]	Zhu L, Chen Z, Yin Z, Wang G, Xia G, Hu Y, Zheng X, Zhou M, Chen M, Liu M 2014 Chin. Phys. Lett. 31 035203
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[27]	Chen Z, Liu M, Hong L, Zhou Q, Cheng L, Hu X 2011 Phys. Plasmas 18 013505
[28]	Chen Z, Liu M, Lan C, Chen W, Tang L, Luo Z, Yan B, Lv J, Hu X 2009 Chin. Phys. B 18 3484
[29]	Kousaka H, Ono K 2003 Plasma Sources Sci. Technol. 12 273
[30]	Yang J, Shi F, Yang T, Meng Z 2010 Acta. Phys. Sin. 59 8701 (in Chinese)[杨涓, 石峰, 杨铁链, 孟志强 2010 59 8701]
[31]	Boeuf J P, Chaudhury B, Zhu G 2010 Phys. Rev. Lett. 104 015002

Cited By

[1]	Dong T, Ye K, Liu W 2012 Acta. Phys. Sin. 61 145202 (in Chinese)[董太源, 叶坤涛, 刘维清 2012 61 145202]
[2]	Hans Schltera, and Antonia Shivarova 2007 Physics Reports 443 121
[3]	Liu M, Sugai H, Hu X, Ishijima T, Jiang Z, Li B, Dan M 2006 Acta. Phys. Sin. 55 5905 (in Chinese) [刘明海, 菅井秀郎, 胡希伟, 石岛芳夫, 江中和, 李斌, 但敏 2006 55 5905]
[4]	Zhu G, Boeuf J P, Li J 2012 Acta. Phys. Sin. 61 235202 (in Chinese)[朱国强, Jean-Pierre Boeuf, 李进贤 2012 61 235202]
[5]	Zhou Q, Dong Z 2013 Acta. Phys. Sin. 62 205202 (in Chinese)[周前红, 董志伟 2013 62 205202]
[6]	Sugai H, Ghanashev I, Nagatsu M 1998 Plasma Sources Sci. Technol. 7 192
[7]	Nagatsu M, Terashita F, Nonaka H, Xu L, Nagata T, Koide Y 2005 Appl. Phys. Lett. 86 211502
[8]	Xu L, Terashita F, Nonaka H, Ogino A, Nagata T, Koide Y, Nanko S, Kurawaki I, Nagatsu M 2006 J. Phys. D: Appl. Phys. 39 148
[9]	Xu X, Liu F, Zhou Q, Liang B, Liang Y, Liang R 2008 Appl. Phys. Lett. 92 011501
[10]	Liang B, Ou Q, Liang Y, Liang R 2007 Chin. Phys. 16 3732
[11]	Chang X, Kunii K, Liang R, Nagatsu M 2013 J. Appl. Phys. 114 183302
[12]	Hu Y, Chen Z, Liu M, Hong L, Li P, Zheng X, Xia G, Hu X 2011 Chin. Phys. Lett. 28 115201
[13]	Chen Z, Liu M, Zhou Q, Hu Y, Yang A, Zhu L, Hu X 2011 Chin. Phys. Lett. 28 045201
[14]	Chen Z, Liu M, Zhou P, Chen W, Lan C, Hu X 2008 Plasma Sci. Technol. 10 655
[15]	Chen Z, Liu M, Tang L, Hu P, Hu X 2009 J. Appl. Phys. 106 013314
[16]	Chen Z, Liu M, Tang L, Lv J, Wen Y, Hu X 2009 J. Appl. Phys. 106 063304
[17]	Chen Z, Liu M, Lan C, Chen W, Luo Z, Hu X 2008 Chin. Phys. Lett. 25 4333
[18]	Kousaka H, Xu J Q, Umehara N 2005 Jpn. J. Appl. Phys. 44 1052
[19]	Kousaka H, Umehara N 2006 Vacuum 80 806
[20]	Kousaka H, Xu J Q, Umehara N 2006 Vacuum 80 1154
[21]	Chen Z, Ye Q, Xia G, Hong L, Hu Y, Zheng X, Li P, Zhou Q, Hu X, Liu M 2013 Phys. Plasmas 20 033502
[22]	Chen Z, Liu M, Xia G, Huang Y 2012 IEEE Trans. Plasma Sci. 40 2861
[23]	Chen Z, Xia G, Zhou Q, Hu Y, Zheng X, Zhen Z, Hong L, Li P, Huang Y 2012 Rev. Sci. Instrum. 83 084701
[24]	Chen Z, Xia G, Liu M, Zheng X, Hu Y, Li P, Xu G, Hong L, Sheng H, Hu X W 2013 Acta Phys. Sin. 62 195204 (in Chinese)[陈兆权, 夏广庆, 刘明海, 郑晓亮, 胡业林, 李平, 徐公林, 洪伶俐, 沈昊宇, 胡希伟 2013 62 195204]
[25]	Zhu L, Chen Z, Yin Z, Wang G, Xia G, Hu Y, Zheng X, Zhou M, Chen M, Liu M 2014 Chin. Phys. Lett. 31 035203
[26]	Chen Z, Liu M, Tang L, Lv J, Hu X 2010 Chin. Phys. Lett. 27 025205
[27]	Chen Z, Liu M, Hong L, Zhou Q, Cheng L, Hu X 2011 Phys. Plasmas 18 013505
[28]	Chen Z, Liu M, Lan C, Chen W, Tang L, Luo Z, Yan B, Lv J, Hu X 2009 Chin. Phys. B 18 3484
[29]	Kousaka H, Ono K 2003 Plasma Sources Sci. Technol. 12 273
[30]	Yang J, Shi F, Yang T, Meng Z 2010 Acta. Phys. Sin. 59 8701 (in Chinese)[杨涓, 石峰, 杨铁链, 孟志强 2010 59 8701]
[31]	Boeuf J P, Chaudhury B, Zhu G 2010 Phys. Rev. Lett. 104 015002

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Vol. 63, Issue 9 - 2014-05-05

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