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Exciton binding energies in InGaAsP/InP quantum well with different contents of In are calculated through variational method in the effective mass approximation. The variation of exciton binding energy as a function of well width, In content, and applied external electric field is studied. It is shown that the exciton binding energy is a non-monotonic function of well width. It increases first until reaching a maximum, and then decreases as the well width increases farther. In addition, with the increase of In content, the well width should increase to reach the maximum value of exciton binding energy. It is also found that the external electric field has little effect on binding energy, but when the electric field is large enough, it will destroy the excitonic effect. These results may provide some theoretical basis for the design and control of InGaAsP/InP optical devices.
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Keywords:
- exciton /
- InGaAsP/InP quantum well /
- binding energy /
- electric field
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[23] Wu H T, Wang H L, Jiang L M, Gong Q, Feng S L 2009 Physica B 404 122
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[25] Jiang L M, Wang H L, Wu H T, Gong Q, Feng S L 2008 Chin. Phys. Lett. 25 3017
[26] Harrison P, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructure, 2nd ed (John Wiley & Sons, New York, 2005)
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[1] Turkowski V, Leonardo A, Ullrich C A 2009 Phys. Rev. B 79 233201
[2] Gil B, Felbacq D, Chichibu S F 2012 Phys. Rev. B 85 075205
[3] Zhang H, Liu L, Liu J J 2007 Acta Phys. Sin. 56 0487 (in Chinese) [张红, 刘磊, 刘建军 2007 56 0487]
[4] Ha S H, Ban S L 2008 J. Phys.: Condens. Matter 20 085218
[5] Kuo Y H, Li Y S 2009 Phys. Rev. B 79 245328
[6] High A A, Leonard J R, Hammack A T, Fogler M M, Butov L V, Kavokin A V, Campman K L, Gossard A C 2012 Nature 483 584
[7] Schaller R D, Klimov V I, 2004 Phys. Rev. Lett. 92 186601
[8] Albrecht K F, Wang H B, Mhlbacher L, Thoss M, Komnik A 2012 Phys. Rev. B 86 081412
[9] Wang Z J, Pedrosa H, Krauss T, Rothberg L 2006 Phys. Rev. Lett. 96 047403
[10] You H L, Zhang C F 2009 Chin. Phys. B 18 0349
[11] Chen J, Perebeinos V, Freitag M, Tsang J, Fu Q, Liu J, Avouris P 2005 Science 310 1171
[12] Hu Z H, Huang D X 2003 Acta Phys. Sin. 52 1488 (in Chinese) [胡振华, 黄德修 2003 52 1488]
[13] Belhadj T, Simon C M, Amand T, Renucci P, Chatel B, Krebs O, Lemaitre A, Voisin P, Marie X, Urbaszek B 2009 Phys. Rev. Lett. 103 086601
[14] Li W S, Sun B Q 2013 Acta Phys. Sin. 62 047801 (in Chinese) [李文生, 孙宝权 2013 62 047801]
[15] Klimov V I, Ivanov S A, Nanda J, Achermann M, Bezel I, McGuire J A, Piryatinski A 2007 Nature 447 441
[16] Dvorak M, Wei S H, Wu Z G 2013 Phys. Rev. Lett. 110 016402
[17] Shen M, Bai Y K, An X T, Liu J J 2013 Chin. Phys. B 22 047101
[18] Tudury H A P, Nakaema M K K, Iikawa F, Brum J A, Ribeiro E, Carvalho W, Jr, Bernussi A A, Gobbi A L 2001 Phys. Rev. B 64 153301
[19] Kong D H, Zhu H L, Liang S, Qiu J F, Zhao L J 2012 Chin. Phys. Lett. 29 024201
[20] Yin X, Wang H L, Gong Q, Feng S L 2013 Chinese J. Quantum Electron 30 236 (in Chinese) [尹新, 王海龙, 龚谦, 封松林 2013 量子电子学报 30 236]
[21] Wang H L, Jiang L M, Gong Q, Feng S L 2010 Physica B 405 3818
[22] Dacal L C O, Brum J A 2002 Phys. Rev. B 65 115324
[23] Wu H T, Wang H L, Jiang L M, Gong Q, Feng S L 2009 Physica B 404 122
[24] Sivalertporn K, Mouchliadis L, Ivanov A L, Philp R, Muljarov E A 2012 Phys. Rev. B 85 045207
[25] Jiang L M, Wang H L, Wu H T, Gong Q, Feng S L 2008 Chin. Phys. Lett. 25 3017
[26] Harrison P, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructure, 2nd ed (John Wiley & Sons, New York, 2005)
[27] Li E H 2000 Physica E 5 215
[28] Priester C, Allan G, Lannoo M 1984 Phys. Rev. B 30 7302
[29] Haines M J L S, Ahmed N, Adams S J A, Mitchell K, Agool I R, Pidgeon C R, Cavenett B C, O’Reilly E P, Ghiti A, Emeny M T 1991 Phys. Rev. B 43 11944
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