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本文以Zn(CH3COO)22H2O, Mn(CH3COO)24H2O和氨水缓冲溶液为原料, 在4 T脉冲磁场下利用水热法制备了Mn掺杂ZnO稀磁半导体晶体, 通过X射线衍射、 扫描电子显微镜、透射电子显微镜、拉曼光谱、荧光分光光度计及振动样品磁强计等对样品的微观结构及磁性能等进行了表征, 结果表明: Mn掺杂ZnO稀磁半导体晶体仍保持ZnO六方纤锌矿结构, 4 T脉冲磁场下合成的Mn掺杂ZnO稀磁半导体晶体具有明显的室温铁磁性, 其饱和磁化强度(Ms)为0.028 emu/g, 比无脉冲磁场下制备的样品提高一倍以上, 且4 T 脉冲磁场将样品的居里温度提高了15 K.In this study, zinc acetate, manganese acetate, ammonium hydroxide and ammonium chloride are used as the source materials to prepare crystalline Mn-doped ZnO diluted magnetic semiconductor by hydrothermal method under a 4 T pulsed magnetic field. The microstructures, morphologies and magnetic properties of the samples are characterized by X-ray diffraction, scanning electron microscope, transmission electron microscope, Raman scattering spectra, Photoluminescnce and vibrating sample magnetometer. The effect of pulsed magnetic field on the microstructure and magnetic property of the Mn-doped ZnO diluted magnetic semiconductor are discussed. The result indicates that all the samples are still of hexagonal wurtzite structure. The pulsed magnetic field promotes the crystal growth, and improves room temperature ferromagnetism. The saturation magnetization (0.028 emu/g) of the sample fabricated under 4 T pulsed magnetic field is more than two times that of the sample synthesized without pulsed magnetic field. The Curie temperature (Tc) of the Mn-doped ZnO increases 15 K through the pulsed magnetic field processing.
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Keywords:
- magnetic semiconductor /
- Mn-doped ZnO /
- pulsed magnetic field /
- hydrothermal
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[1] Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnár S von, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488
[2] Matsumoto Y, Murakami M, Shono T, Hasegawa T, Fukumura T, Kawasaki M, Ahmet P, Chikyow T, Koshihara S, Koinuma H 2001 Science 291 854
[3] Chiba D, Yamanouchi M, Matsukura F, Ohno H 2003 Science 301 943
[4] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[5] Sato K, Katayama-Yoshida H 2001 Jpn. J. Appl. Phys. 40 L334
[6] Liu X C, Shi E W, Song L X, Zhang H W, Chen Z Z 2006 Acta Phys. Sin. 55 2557 (in Chinese) [刘学超, 施尔畏, 宋力昕, 张华伟, 陈之战 2006 55 2557]
[7] Yang J J, Fang Q Q, Wang B M, Wang C P, Zhou J, Li Y, Liu Y M, Lü Q R 2007 Acta Phys. Sin. 56 1116 (in Chinese) [杨景景, 方庆清, 王保明, 王翠平, 周军, 李雁, 刘艳美, 吕庆荣 2007 56 1116]
[8] Yu Z, Li X, Long X, Cheng X W, Wang J Y, Liu Y, Cao M S, Wang F C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于宙, 李祥, 龙雪, 程兴旺, 王晶云, 刘颖, 曹茂盛, 王富耻 2008 57 4539]
[9] Zheng W L, Li Z W, Wei Z R 2005 Physics Experimentation (in Chinese) [郑文礼, 李志文, 韦志仁 2005 物理实验 25 16]
[10] Zhang H W, Shi E W, Chen Z Z, Liu X C, Xiao B 2006 Solid State Communications 137 272
[11] Huang G J, Wang J B, Zhong X L, Zhou G C 2007 Journal of Optoelectronics·Laser 18 597 (in Chinese) [黄贵军, 王金斌, 钟向丽, 周功程 2007光电子·激光 18 597]
[12] Jayakumar O D, Salunke H G, Kadam R M, Mohapatra M 2006 Nanotechnology 17 1278
[13] Mukadam M D, Yusuf S M 2008 Physica B 403 2602
[14] Wang Z H, Geng D Y, Zhang Z D 2009 Solid State Communications 149 682
[15] Li Y B, Li Y, Zhu M Y, Yang T, Huang J, Jin H M, Hu Y M 2010 Solid State Commun. 150 751
[16] Huang J, Zhu M Y, Li Y, Yang T, Li Y B, Jin H M, Hu Y M 2010 J. Nanosci. Nanotechno. 10 7303
[17] Yang T, Li Y, Zhu M Y, Li Y B, Huang J, Jin H M, Hu Y M 2010 Mater. Sci. Eng. B 170 129
[18] Chu D W, Zeng Y P, Jiang D L 2007 Solid State Commun. 143 308
[19] Bundesmann C, Ashkenov N, Schubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974
[20] Wang X Q, Yang S R, Wang J Z, Li M T, Jiang X Y, Du G T, Liu X, Chang R P H 2001 J. Cryst. Growth. 226 123
[21] Dieti T, Haury A, dAubigne Y M 1997 Physical Review B 55 R3347
[22] Pearton S J, Norton D P, Norton D P, Hebard A F, Park Y D, Boatner L A, Budai J D 2003 Mat. Sci. Eng. R 40 137
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