Study on the structure, optical, electrical and magnetic properties of Mn-Na codoping ZnO nonpolar thin films

Ye Ying-Hui; Lü Bin; Zhang Wei-Guang; Huang Hong-Wen; Ye Zhi-Zhen

doi:10.7498/aps.61.036701

Abstract

Nonpolar Zn(Mn, Na)O thin films with orientation (a-plane) have been successfully grown on r-plane sapphire substrates by pulsed laser deposition (PLD) through a Mn-Na codoping route. The X-ray diffraction(XRD), field-emission on scanning electron micorscope(FE-SEM), Hall-effect and X-ray photoelectron spectroscopy(XPS) measurements show that substrate temperature and work pressure have a significant influence on the nonpolar growth of Zn(Mn,Na)O thin films. The films prepared under a work pressure of 0.02Pa and substrate temperature of 600 ℃ could achieve a high quality crystallite with fine optical and electrical properties through Mn-Na codoping. Moreover, the influence of the growth orientation on room temperature ferromagnetism (RTFM) of the thin films is investigated by superconducting quantum interference device(SQUID), and the possible mechanism involving the origin of RTFM in the Zn(Mn,Na)O films is discussed as well.

Keywords:

Authors and contacts

1.
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51002134) and the Fundamental Research Funds for the Central Universities of China (Grant No. 2010QNA4002).

References

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Cited By

[1]	陈长乐, 高国棉, 杨晓光, 袁孝, 宋宙模 2006 55 3133]
[2]	Mang A, Reimann K, Rübenacke St 1995 Solid State Commun. 94251
[3]	Reynolds D C, Look D C, Jogai B 1996 Solid State Commun. 99873
[4]	Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, ShenMY, GotoT 1997 Appl. Phys. Lett. 70 2230
[5]	Look D C 2001 Mater. Sci. Eng. B 80 383
[6]	Özgür Ü , Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S,Avrutin V, Cho S J, Morkoc H 2005 J. Appl. Phys. 98 041301
[7]	Wetzel C, Zhu M, Senawiratne J, Detchprohm T, Persans P D, LiuL, Preble E A, Hanser D 2008 J. Cryst. Growth 310 3987
[8]	Zhang B P, Liu B L, Yu J Z, Wang Q M 2007 Appl. Phys. Lett. 90132113
[9]	Tanaka A, Yanagitani T, Matsukawa M, Watanabe Y 2008 IEEETrans. Ultrason. Ferroelectr. Freq. Control 55 2709
[10]	Waltereit P, Brandt O, Trampert A, Grahn H T, Menniger J, RamsteinerM, Reiche M, Ploog K H 2000 Nature 406 865
[11]	Chauveau J M, Morhain C, Lo B, Vinter B, Vennegues P, Laugt M,Buell D, Tesseire-Doninelli M, Neu G 2007 Appl. Phys. A Mater.Sci. Process. 88 65
[12]	Wei X H, Li Y R, Jie W J, Tang J L, Zeng H Z, Huang W, ZhangY, Zhu J 2007 J. Phys. D Appl. Phys. 40 7502
[13]	Chou M M C, Hang D R, Wang S C, Chen C L, Lee C Y 2010 J.Cryst. Growth 312 1170
[14]	Kashiwaba Y, Abe T, Nakagawa A, Endo H, Niikura I, KashiwabaY 2009 Phys. Status Solidi A Appl. Mat. 206 944
[15]	Chauveau J M, Teisseire M, Kim-Chauveau H, Deparis C,Morhain C, Vinter B 2010 Appl. Phys. Lett. 97 081903
[16]	Chou M M C, Chang L W, Hang D R, Chen C L, Chang D S, LiC A 2009 Cryst. Growth Des. 9 2073
[17]	Zhou J H, Zhou S M, Huang T H, Lin H, Li S Z, Zou J, Wang J,Han P, Zhang R 2008 Acta Phys. Sin. 57 430 (in Chinese) [周健华, 周圣明, 黄涛华, 林辉, 李抒智, 邹军, 王军, 韩平, 张荣 2008 57 0430]
[18]	Kajikawa Y 2006 J. Cryst. Growth 289 387
[19]	Phan T L, Vincent R, Phan M H, Dan N H, Yu S C 2007 SolidState Commun. 144 134
[20]	Ye Z Z, Zhang L Q, Lu B, Lu J G, He H P, Zhang Y Z, Zhu L P,Huang J Y, Jin Y Z, Zhang J, Jiang J, Wu K W, Huang J, Xie Z (inpress)
[21]	Gu H, Jiang Y Z, Xu Y B, Yan M 2011 Appl. Phys. Lett. 98012502
[22]	Zhao Y Z, Chen C L, Gao G M, Yang X G, Yuan X, Song Z M2006 Acta Phys. Sin. 55 3133 (in Chinese) [赵跃智,
[23]	Xu H Y, Liu Y C, Xu C S, Liu Y X, Shao C L, Mu R 2006 Appl.Phys. Lett. 88 242502
[24]	Biesinger M C, Paynec B P, Grosvenord A P, Laua L W M, GersonbA R, Smart R S C 2011 Appl. Surf. Sci. 257 2721
[25]	Chuang T J, Brundle C R, Rice D W 1976 Surf. Sci. 59 413
[26]	Zhang L Q, Ye Z Z, Lu J G, Zhang Y Z, Zhu L P, Zhang J, Yang D,Wu K W, Huang J, Xie Z 2010 J. Phys. D Appl. Phys. 43 015001
[27]	Yang L W, Wu X L, Huang G S, Qiu T, Yang Y M 2005 J. Appl.Phys. 97 014308
[28]	Srikant V, Clarke D R 1997 J. Appl. Phys. 81 6357
[29]	Khranovskyy V, Grossner U, Lazorenko V, Lashkarev G, SvenssonB G, Yakimova R 2006 Superlattices Microstruct. 39 275
[30]	Maiti U N, Ghosh P K, Nandy S, Chattopadhyay K K 2007 PhysicaB 387 103
[31]	Mofor A C, El-Shaer A, Bakin A, Waag A, Ahlers H, SiegnerU, Sievers S, Albrecht M, Schoch W, Izyumskaya N, Avrutin V,Sorokin S, Ivanov S, Stoimenos J 2005 Appl. Phys. Lett. 87062501
[32]	Sato K, Katayama-Yoshida H 2002 Semicond. Sci. Technol. 17367
[33]	Yang Z, Liu J L, Biasini M, Beyermann P 2008 Appl. Phys. Lett.92 042111
[34]	Coey J M D, Venkatesan M, Fitzgerald C B 2005 Nat. Mater. 4173036701-7

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Vol. 61, Issue 3 - 2012-02-05

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