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To improve the uniformity of crystalline volume fraction (Xc) along the deposition direction in microcrystalline silicon films, very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), combined with parameters smoothly changed two-step method, is adopted to prepare high-rate microcrystalline silicon films on glass subtrates. With a power density of 2.1 W/cm2, silane concentration between 6% and 9.6%, a difference between Xc measured in the film direction and that in the glass direction, is just 2 percent. With a silane concentration of 9.6%, Xc, measured in the film direction and the glass direction respectively reach 50% and 48%, close to 2 percent, relative difference just 4 percent, whereas the deposition rate reaches 3.43 nm/s. What is more, Xc difference can reduce to 1 percent by strictly controlling the transitional parameters. It shows that the new deposition method not only curb the incubation layers and improve the vertical structure, but also give a larger range for film optimizing in the future.
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Keywords:
- microcrystalline silicon thin film /
- amorphous incubation layer /
- high-rate growth /
- very high frequency plasma enhanced vapor deposition
[1] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 59 8231]
[2] Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Söderström T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[3] Bugnon G, Feltrin A, Bartlome R, Strahm B, Bronneberg A C, Parascandolo G, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 134
[4] Takashiri M, Tabuchi T 2010 Surf. Coat. Tech. 204 3525
[5] Houben L, Luysberg M, Hapke P, Carius R, Finger F, Wagner H 1998 Philosoph. Mag. A 77 1447
[6] Verkerk A, Rath J K, Schropp R 2010 Phys. Status Solid. A 207 530
[7] Suzuki S, Kondo M, Matsuda A 2002 Sol. Energy Mater. Sol. Cells 74 489
[8] Strahm B, Howling A A, Sansonnens L, Hollenstein C, Kroll U, Meier J, Ellert C, Feitknecht L, Ballif C 2007 Sol. Energ. Mater. Sol. Cells 91 495
[9] Guo Q C, Geng X H, Sun J, Wei C C, Han X Y, Zhang X D, Zhao Y 2007 Acta Phys. Sin. 56 2790 (in Chinese) [郭群超, 耿新华, 孙建, 魏长春, 韩晓艳, 张晓丹, 赵颖 2007 56 2790]
[10] Han X Y, Hou G F, Zhang X D,Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[11] Zhang X D, Zheng X X, Wang G H, Zhao Y 2011 Appl. Surf. Sci. 257 3014
[12] Yue H Y, Wu A M, Zhang X Y, Li T J 2011 J. Cryst. Growth 322 1
[13] Mao H Y, Wuu D S, Wu B R, Lo S Y, Horng R H 2011 Mater. Chem. Phys. 126 665
[14] Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F 2005 Appl. Phys. Lett. 87 073503
[15] Gao X Y, Li R, Chen Y S, Lu J X, Liu P, Feng T H, Wang H J, Yang S E 2006 Acta Phys. Sin. 55 2790 (in Chinese) [郜小勇, 李瑞, 陈永生, 卢景霄, 刘萍, 冯团辉, 王红娟, 杨仕娥 2006 55 0098]
[16] Collins R W, Ferlauto A S, Ferreira G M, Chen C, Koh J, Koval R J, Lee Y, Pearce J M, Wronski C R 2003 Sol. Energy Mater. Sol. Cells 78 143
[17] Nakamura K, Yoshino K, Takeoka S, Shimizu I 1995 Jpn. J. Appl. Phys. 34 442
[18] Sobajima Y, Nishino M, Fukumori T, Kurihara M, Higuchi T, Nakano S, Toyama T, Okamoto H 2009 Sol. Energy Mater. Sol. Cells 93 980
[19] Tsai C C, Anderson G B, Thompson R, Wacker B 1998 J. Non- Cryst. Solids 114 151
[20] Graf U, Meier J, Kroll U, Bailat J, Droz C, Vallat-Sauvain E, Shah A 2003 Thin Solid Films 427 37
[21] Guo X J, Lu J X, Wen S T, Yang G, Chen Y S, Zhang Q F, Gu J H 2008 J. Semiconduct. 29 1160 (in Chinese) [郭学军, 卢景霄, 文书堂, 杨根, 陈永生, 张庆丰, 谷锦华 2008 半导体学报 29 1160]
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[1] Zhang X D, Zheng X X, Wang G H, Xu S Z, Yue Q, Lin Q, Wei C C, Sun J, Zhang D K, Xiong S Z, Geng X H, Zhao Y 2010 Acta Phys. Sin. 59 8231 (in Chinese) [张晓丹, 郑新霞, 王光红, 许盛之, 岳强, 林泉, 魏长春, 孙建, 张德坤, 熊绍珍, 耿新华, 赵颖 2010 59 8231]
[2] Meillaud F, Feltrin A, Despeisse M, Haug F J, Dominé D, Python M, Söderström T, Cuony P, Boccard M, Nicolay S, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 127
[3] Bugnon G, Feltrin A, Bartlome R, Strahm B, Bronneberg A C, Parascandolo G, Ballif C 2011 Sol. Energy Mater. Sol. Cells 95 134
[4] Takashiri M, Tabuchi T 2010 Surf. Coat. Tech. 204 3525
[5] Houben L, Luysberg M, Hapke P, Carius R, Finger F, Wagner H 1998 Philosoph. Mag. A 77 1447
[6] Verkerk A, Rath J K, Schropp R 2010 Phys. Status Solid. A 207 530
[7] Suzuki S, Kondo M, Matsuda A 2002 Sol. Energy Mater. Sol. Cells 74 489
[8] Strahm B, Howling A A, Sansonnens L, Hollenstein C, Kroll U, Meier J, Ellert C, Feitknecht L, Ballif C 2007 Sol. Energ. Mater. Sol. Cells 91 495
[9] Guo Q C, Geng X H, Sun J, Wei C C, Han X Y, Zhang X D, Zhao Y 2007 Acta Phys. Sin. 56 2790 (in Chinese) [郭群超, 耿新华, 孙建, 魏长春, 韩晓艳, 张晓丹, 赵颖 2007 56 2790]
[10] Han X Y, Hou G F, Zhang X D,Wei C C, Li G J, Zhang D K, Chen X L, Sun J, Zhang J J, Zhao Y, Geng X H 2009 Chin. Phys. B 18 3563
[11] Zhang X D, Zheng X X, Wang G H, Zhao Y 2011 Appl. Surf. Sci. 257 3014
[12] Yue H Y, Wu A M, Zhang X Y, Li T J 2011 J. Cryst. Growth 322 1
[13] Mao H Y, Wuu D S, Wu B R, Lo S Y, Horng R H 2011 Mater. Chem. Phys. 126 665
[14] Mai Y, Klein S, Carius R, Stiebig H, Geng X, Finger F 2005 Appl. Phys. Lett. 87 073503
[15] Gao X Y, Li R, Chen Y S, Lu J X, Liu P, Feng T H, Wang H J, Yang S E 2006 Acta Phys. Sin. 55 2790 (in Chinese) [郜小勇, 李瑞, 陈永生, 卢景霄, 刘萍, 冯团辉, 王红娟, 杨仕娥 2006 55 0098]
[16] Collins R W, Ferlauto A S, Ferreira G M, Chen C, Koh J, Koval R J, Lee Y, Pearce J M, Wronski C R 2003 Sol. Energy Mater. Sol. Cells 78 143
[17] Nakamura K, Yoshino K, Takeoka S, Shimizu I 1995 Jpn. J. Appl. Phys. 34 442
[18] Sobajima Y, Nishino M, Fukumori T, Kurihara M, Higuchi T, Nakano S, Toyama T, Okamoto H 2009 Sol. Energy Mater. Sol. Cells 93 980
[19] Tsai C C, Anderson G B, Thompson R, Wacker B 1998 J. Non- Cryst. Solids 114 151
[20] Graf U, Meier J, Kroll U, Bailat J, Droz C, Vallat-Sauvain E, Shah A 2003 Thin Solid Films 427 37
[21] Guo X J, Lu J X, Wen S T, Yang G, Chen Y S, Zhang Q F, Gu J H 2008 J. Semiconduct. 29 1160 (in Chinese) [郭学军, 卢景霄, 文书堂, 杨根, 陈永生, 张庆丰, 谷锦华 2008 半导体学报 29 1160]
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