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The single crystalline Tm2O3 films are deposited on Si(001) substrates by molecular beam epitaxy, by using x-ray photoelectron spectroscopy, the valence and the conduction-band shifts of Tm2O3 to Si are obtained to be 3.1 0.2 eV and 1.9 0.3 eV, respectively. The energy gap of Er2O3 is determined to be 6.1 0.2 eV. The results of the study show that the Tm2O3 could be a promising candidate for high-k gate dielectrics.
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Keywords:
- Tm2O3 /
- x-ray photoelectron spectroscopy /
- band offsets
[1] Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (New York: Wiley) p275
[2] Huo H B, Liu Z T, Yan F 2008 Mater. Rev. 22 123 (in Chinese) [霍会宾, 刘正堂, 阎锋 2008 材料导报 22 123]
[3] Yoannoa. Sougleridis V, Vellianitis G, Dimoulas A 2003 J. Appl. Phys. 93 2003
[4] Guo D F, Geng W G, Lan W, Huang C M, Wang Y Y 2005 Acta Phys. Sin. 54 5901 (in Chinese) [郭得峰, 耿伟刚, 兰伟, 黄春明, 王印月 2005 54 5901]
[5] Li D, Lü S Z, Chen B J, Wang H Y, Tang B, Zhang J H, Hou S G, Huang S H 2001 Acta Phys. Sin. 50 933 (in Chinese) [李丹, 吕少哲, 陈宝玖, 王海宇, 唐波, 张家骅, 侯尚公, 黄世华 2001 50 933]
[6] Tinkham B P, Takahasi M, Jenichen B 2006 Semiconduc. Sci. Tech. 21 152
[7] Guo X, Braun W, Jenichen B, Plooge K H 2006 J. Cryst. Growth 290 73
[8] Losurdo M, Giangregorio M M, Bruno G, Yang D, Irene E A, Suvorova A A, Saunders M 2007 Appl. Phys. Lett. 91 091914
[9] Jinesh K B, Lamy Y, Tois E, BeslingWF A 2009 Appl. Phys. Lett. 94 252906
[10] Fang Z B, Zhu Y Y, Wang J L, Jiang Z M 2009 Chin. Phys. B 18 3542
[11] Zhu Y Y, Fang Z B, Liu Y S 2010 Chin. Phys. B 19 097807
[12] Cheng W, Fang Z B, Ma X Y 2010 Nanomater. Struct. 47 282 (in Chinese) [陈伟, 方泽波, 马锡英 2010 纳米材料与结构 47 282]
[13] Ono H, Katsumata T 2001 Appl. Phys. Lett. 78 1832
[14] Ji T, Cui J, Fang Z B, Nie T X, Fan Y L, Li X L, He Q, Jiang Z M 2011 J. Crys. Growth 321 171
[15] Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620
[16] Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1983 Phys. Rev. B 28 1965
[17] Chambers S A, Liang Y, Yu Z, Droopad R, Ramdani J 2001 J. Vac. Sci. Technol. A 19 934
[18] Miyazaki S 2001 J. Vac. Sci. Technol. B 19 2212
[19] Zhu Y Y, Chen S, Xu R, Fang Z B, Zhao J F, Fan Y L, Yang X J, Jiang Z M 2006 Appl. Phys. Lett. 88 162909
[20] Akazawa M, Gao B, Hashizume T, Hiroki M, Yamahata S, Shigekawa N 2011 J. Appl. Phys. 109 013703
[21] Sayan S, Emge T, Garfunkel E, Zhao X, Wielunskil, Bartynski R A, Vanderbilt D, Suehle J S, Suzer S, Banaszak-Holl M 2004 J. Appl. Phys. 96 7485
[22] Puthen Kovilakam R, Chang J P 2004 J. Appl. Phys. 96 2701
[23] Seguini G, Perego M, Fanciulli M 2007 Topics in Applied Physics (Berlin: Springer-Verlag)
[24] Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M, Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese) [郑小虎, 黄安平, 杨智超, 肖志松, 王玫, 程国安 2011 60 017702]
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[1] Sze S M 1981 Physics of Semiconductor Devices (2nd Ed.) (New York: Wiley) p275
[2] Huo H B, Liu Z T, Yan F 2008 Mater. Rev. 22 123 (in Chinese) [霍会宾, 刘正堂, 阎锋 2008 材料导报 22 123]
[3] Yoannoa. Sougleridis V, Vellianitis G, Dimoulas A 2003 J. Appl. Phys. 93 2003
[4] Guo D F, Geng W G, Lan W, Huang C M, Wang Y Y 2005 Acta Phys. Sin. 54 5901 (in Chinese) [郭得峰, 耿伟刚, 兰伟, 黄春明, 王印月 2005 54 5901]
[5] Li D, Lü S Z, Chen B J, Wang H Y, Tang B, Zhang J H, Hou S G, Huang S H 2001 Acta Phys. Sin. 50 933 (in Chinese) [李丹, 吕少哲, 陈宝玖, 王海宇, 唐波, 张家骅, 侯尚公, 黄世华 2001 50 933]
[6] Tinkham B P, Takahasi M, Jenichen B 2006 Semiconduc. Sci. Tech. 21 152
[7] Guo X, Braun W, Jenichen B, Plooge K H 2006 J. Cryst. Growth 290 73
[8] Losurdo M, Giangregorio M M, Bruno G, Yang D, Irene E A, Suvorova A A, Saunders M 2007 Appl. Phys. Lett. 91 091914
[9] Jinesh K B, Lamy Y, Tois E, BeslingWF A 2009 Appl. Phys. Lett. 94 252906
[10] Fang Z B, Zhu Y Y, Wang J L, Jiang Z M 2009 Chin. Phys. B 18 3542
[11] Zhu Y Y, Fang Z B, Liu Y S 2010 Chin. Phys. B 19 097807
[12] Cheng W, Fang Z B, Ma X Y 2010 Nanomater. Struct. 47 282 (in Chinese) [陈伟, 方泽波, 马锡英 2010 纳米材料与结构 47 282]
[13] Ono H, Katsumata T 2001 Appl. Phys. Lett. 78 1832
[14] Ji T, Cui J, Fang Z B, Nie T X, Fan Y L, Li X L, He Q, Jiang Z M 2011 J. Crys. Growth 321 171
[15] Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620
[16] Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1983 Phys. Rev. B 28 1965
[17] Chambers S A, Liang Y, Yu Z, Droopad R, Ramdani J 2001 J. Vac. Sci. Technol. A 19 934
[18] Miyazaki S 2001 J. Vac. Sci. Technol. B 19 2212
[19] Zhu Y Y, Chen S, Xu R, Fang Z B, Zhao J F, Fan Y L, Yang X J, Jiang Z M 2006 Appl. Phys. Lett. 88 162909
[20] Akazawa M, Gao B, Hashizume T, Hiroki M, Yamahata S, Shigekawa N 2011 J. Appl. Phys. 109 013703
[21] Sayan S, Emge T, Garfunkel E, Zhao X, Wielunskil, Bartynski R A, Vanderbilt D, Suehle J S, Suzer S, Banaszak-Holl M 2004 J. Appl. Phys. 96 7485
[22] Puthen Kovilakam R, Chang J P 2004 J. Appl. Phys. 96 2701
[23] Seguini G, Perego M, Fanciulli M 2007 Topics in Applied Physics (Berlin: Springer-Verlag)
[24] Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M, Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese) [郑小虎, 黄安平, 杨智超, 肖志松, 王玫, 程国安 2011 60 017702]
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