[1] |
Fang Jia, Li Shuang-Liang, Xu Sheng-Zhi, Wei Chang-Chun, Zhao Ying, Zhang Xiao-Dan. Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy. Acta Physica Sinica,
2013, 62(16): 168103.
doi: 10.7498/aps.62.168103
|
[2] |
Zheng Nai-Chao, Liu Hai-Rong, Liu Rang-Su, Liang Yong-Chao, Mo Yun-Fei, Zhou Qun-Yi, Tian Ze-An. Effects of cooling rates on microstructural evolution during solidification process of liquid Ca50Zn50 alloy. Acta Physica Sinica,
2012, 61(24): 246102.
doi: 10.7498/aps.61.246102
|
[3] |
Li Xin-Li, Gu Jin-Hua, Gao Hai-Bo, Chen Yong-Sheng, Gao Xiao-Yong, Yang Shi-E, Lu Jing-Xiao, Li Rui, Jiao Yue-Chao. Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth. Acta Physica Sinica,
2012, 61(3): 036802.
doi: 10.7498/aps.61.036802
|
[4] |
Gao Hai-Bo, Li Rui, Lu Jing-Xiao, Wang Guo, Li Xin-Lin, Jiao Yue-Chao. High-rate deposition of microcrystalline silicon thin film by multi-step method. Acta Physica Sinica,
2012, 61(1): 018101.
doi: 10.7498/aps.61.018101
|
[5] |
Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2010, 59(2): 1190-1195.
doi: 10.7498/aps.59.1190
|
[6] |
Peng Wen-Bo, Liu Shi-Yong, Xiao Hai-Bo, Zhang Chang-Sha, Shi Ming-Ji, Zeng Xiang-Bo, Xu Yan-Yue, Kong Guang-Lin, Yu Yu-De. Gap states and microstructure of microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(8): 5716-5720.
doi: 10.7498/aps.58.5716
|
[7] |
Shen Chen-Hai, Lu Jing-Xiao, Chen Yong-Sheng. High rate growth and electronic property of μc-Si:H. Acta Physica Sinica,
2009, 58(10): 7288-7293.
doi: 10.7498/aps.58.7288
|
[8] |
Gu Jin-Hua, Ding Yan-Li, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique. Acta Physica Sinica,
2009, 58(6): 4123-4127.
doi: 10.7498/aps.58.4123
|
[9] |
Han Xiao-Yan, Geng Xin-Hua, Hou Guo-Fu, Zhang Xiao-Dan, Li Gui-Jun, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhang De-Kun, Zhao Ying. An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films. Acta Physica Sinica,
2009, 58(2): 1344-1347.
doi: 10.7498/aps.58.1344
|
[10] |
Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells. Acta Physica Sinica,
2008, 57(8): 5284-5289.
doi: 10.7498/aps.57.5284
|
[11] |
Yuan Yu-Jie, Hou Guo-Fu, Xue Jun-Ming, Han Xiao-Yan, Liu Yun-Zhou, Yang Xing-Yun, Liu Li-Jie, Dong Pei, Zhao Ying, Geng Xin-Hua. The influence of n-layer on structural properties of i-layer in n-i-p μc-Si∶H thin film solar cells. Acta Physica Sinica,
2008, 57(6): 3892-3897.
doi: 10.7498/aps.57.3892
|
[12] |
Guo Xue-Jun, Lu Jing-Xiao, Chen Yong-Sheng, Zhang Qing-Feng, Wen Shu-Tang, Zheng Wen, Shen Chen-Hai, Chen Qing-Dong. Research on the high-rate deposition of μc-Si:H by VHF-PECVD. Acta Physica Sinica,
2008, 57(9): 6002-6006.
doi: 10.7498/aps.57.6002
|
[13] |
Chen Yong-Sheng, Gao Xiao-Yong, Yang Shi-E, Lu Jing-Xiao, Gu Jin-Hua. The influence of deposition temperature on the structure of microcrystalline silicon film. Acta Physica Sinica,
2007, 56(7): 4122-4126.
doi: 10.7498/aps.56.4122
|
[14] |
Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Zhou Yu-Qin, Wu Zhong-Hua, Chen Xing. Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity. Acta Physica Sinica,
2007, 56(4): 2422-2427.
doi: 10.7498/aps.56.2422
|
[15] |
Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying. Role of gas residence time in the deposition rate and properties of microcrystalline silicon films. Acta Physica Sinica,
2007, 56(5): 2790-2795.
doi: 10.7498/aps.56.2790
|
[16] |
Liu Guo-Han, Ding Yi, Zhu Xiu-Hong, Chen Guang-Hua, He De-Yan. Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD. Acta Physica Sinica,
2006, 55(11): 6147-6151.
doi: 10.7498/aps.55.6147
|
[17] |
Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang. Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica,
2005, 54(4): 1890-1894.
doi: 10.7498/aps.54.1890
|
[18] |
Zhang Xiao-Dan, Zhao Ying, Gao Yan-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Fabrication of microcrystalline silicon thin film and the study of its microstructure and stability. Acta Physica Sinica,
2005, 54(8): 3910-3914.
doi: 10.7498/aps.54.3910
|
[19] |
Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Gu Jin-Hua, Zhou Yu-Qin, Liu Jin-Long, Dong Bao-Zhong, Li Guo-Hua, Ding Kun. The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering. Acta Physica Sinica,
2005, 54(5): 2172-2175.
doi: 10.7498/aps.54.2172
|
[20] |
GUO XIAO-XU, ZHU MEI-FANG, LIU JIN-LONG, HAN YI-QIN, XU HUAI-ZHE, DONG BAO-ZHONG, SHEN WEN-JUN, HAN HE-XIANG. MICROSTRUCTURES OF THE MICRO-CRYSTALLINE SILICON THIN FILMS PREPARED BY HOT WIRE CHEMICAL DEPOSITION WITH HYDROGEN DILUTION. Acta Physica Sinica,
1998, 47(9): 1542-1547.
doi: 10.7498/aps.47.1542
|