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Li Xin-Li, Gu Jin-Hua, Gao Hai-Bo, Chen Yong-Sheng, Gao Xiao-Yong, Yang Shi-E, Lu Jing-Xiao, Li Rui, Jiao Yue-Chao. Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth. Acta Physica Sinica,
2012, 61(3): 036802.
doi: 10.7498/aps.61.036802
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[2] |
Gao Hai-Bo, Li Rui, Lu Jing-Xiao, Wang Guo, Li Xin-Lin, Jiao Yue-Chao. High-rate deposition of microcrystalline silicon thin film by multi-step method. Acta Physica Sinica,
2012, 61(1): 018101.
doi: 10.7498/aps.61.018101
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[3] |
Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2010, 59(2): 1190-1195.
doi: 10.7498/aps.59.1190
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[4] |
Wang Guang-Hong, Zhang Xiao-Dan, Xu Sheng-Zhi, Sun Fu-He, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Effects of p-seeding layer on the performance of microcrystalline silicon solar cells deposited in single chamber. Acta Physica Sinica,
2009, 58(10): 7294-7299.
doi: 10.7498/aps.58.7294
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[5] |
Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica,
2009, 58(2): 1293-1297.
doi: 10.7498/aps.58.1293
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[6] |
Han Xiao-Yan, Hou Guo-Fu, Wei Chang-Chun, Zhang Xiao-Dan, Dai Zhi-Hua, Li Gui-Jun, Sun Jian, Chen Xin-Liang, Zhang De-Kun, Xue Jun-Ming, Zhao Ying, Geng Xin-Hua. Optimization of high rate growth high quality μc-Si:H thin films and its application to the solar cells. Acta Physica Sinica,
2009, 58(6): 4254-4259.
doi: 10.7498/aps.58.4254
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[7] |
Han Xiao-Yan, Geng Xin-Hua, Hou Guo-Fu, Zhang Xiao-Dan, Li Gui-Jun, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhang De-Kun, Zhao Ying. An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films. Acta Physica Sinica,
2009, 58(2): 1344-1347.
doi: 10.7498/aps.58.1344
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[8] |
Gu Jin-Hua, Ding Yan-Li, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao. A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique. Acta Physica Sinica,
2009, 58(6): 4123-4127.
doi: 10.7498/aps.58.4123
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[9] |
Yuan Yu-Jie, Hou Guo-Fu, Xue Jun-Ming, Han Xiao-Yan, Liu Yun-Zhou, Yang Xing-Yun, Liu Li-Jie, Dong Pei, Zhao Ying, Geng Xin-Hua. The influence of n-layer on structural properties of i-layer in n-i-p μc-Si∶H thin film solar cells. Acta Physica Sinica,
2008, 57(6): 3892-3897.
doi: 10.7498/aps.57.3892
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[10] |
Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua. Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells. Acta Physica Sinica,
2008, 57(8): 5284-5289.
doi: 10.7498/aps.57.5284
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[11] |
Ge Hong, Zhang Xiao-Dan, Yue Qiang, Zhao Jing, Zhao Ying. Study of space voltage distribution between large-area parallel-plate electrodes for very high frequency plasma enhanced chemical vapor deposition. Acta Physica Sinica,
2008, 57(8): 5105-5110.
doi: 10.7498/aps.57.5105
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[12] |
Guo Xue-Jun, Lu Jing-Xiao, Chen Yong-Sheng, Zhang Qing-Feng, Wen Shu-Tang, Zheng Wen, Shen Chen-Hai, Chen Qing-Dong. Research on the high-rate deposition of μc-Si:H by VHF-PECVD. Acta Physica Sinica,
2008, 57(9): 6002-6006.
doi: 10.7498/aps.57.6002
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[13] |
Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Zhou Yu-Qin, Wu Zhong-Hua, Chen Xing. Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity. Acta Physica Sinica,
2007, 56(4): 2422-2427.
doi: 10.7498/aps.56.2422
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[14] |
Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Gu Jin-Hua, Zhou Yu-Qin, Liu Jin-Long, Dong Bao-Zhong, Li Guo-Hua, Ding Kun. The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering. Acta Physica Sinica,
2005, 54(5): 2172-2175.
doi: 10.7498/aps.54.2172
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[15] |
Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang. Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica,
2005, 54(4): 1890-1894.
doi: 10.7498/aps.54.1890
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[16] |
Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Wu Chun-Ya, Gao Yan-Tao, Hou Guo-Fu, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD. Acta Physica Sinica,
2005, 54(1): 445-449.
doi: 10.7498/aps.54.445
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[17] |
Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica,
2005, 54(4): 1895-1898.
doi: 10.7498/aps.54.1895
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[18] |
Zhang Xiao-Dan, Zhao Ying, Gao Yan-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Wang Yan, Geng Xin-Hua, Xiong Shao-Zhen. Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition. Acta Physica Sinica,
2005, 54(4): 1899-1903.
doi: 10.7498/aps.54.1899
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[19] |
Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng. Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica,
2003, 52(3): 687-691.
doi: 10.7498/aps.52.687
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[20] |
Yang Hui-Dong, Wu Chun-Ya, Zhao Ying, Xue Jun-Ming, Geng Xin-Hua, Xiong Shao-Zhen. Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD. Acta Physica Sinica,
2003, 52(11): 2865-2869.
doi: 10.7498/aps.52.2865
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