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GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells (MQWs) are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence (PL) spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence (EL) spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect (QCSE) and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.
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Keywords:
- nano-LED /
- photoluminescence (PL) /
- electroluminescence (EL)
[1] Chang C Y, Wu Y R 2010 IEEE Journal of Quantum Electronics 46 6 884
[2] Neufeld C J, Schaake C, Grundmann M, Fichtenbaum N A, Keller S, Mishra U K 2007 Phys. Stat. Sol.(c) 45 1605
[3] Kishino K, Kikuchi A, Sekiguchi H, Ishizawa S 2007 Gallium Nitride Materials and Device Ⅱ 6473 64730T
[4] Kim H M, Cho Y H, Lee H, Kim Suk II, Ryu S R, Kim D Y, Kang T W, Chung K S 2004 Nano Letters 46 1059
[5] Hsueh T H, Huang H W, Kao C C, Chang Y H, Yang M C, Kuo H C, Wang S C 2005 Jpn. J. Appl. Phys. 44 4B 2661
[6] Charlton M D B, Lee T, Zoorob M E, Shields P A, Wang W N 2007 Seventh International Conference on Solid State Lighting San Diego, California August 27—29, 2007 6669 p14
[7] Hu H Y, Lu L, Du W, Liu H W, Kan Q, Wang C X, Xu X S, Chen H D 2007 Solid State Lighting and Solar Energy Technologies 6841 68410J-1-4
[8] Keller S, Schaake C, Fichtenbaum N A, Neufeld C J, Wu Y, McGroddy K, David A, DenBaars S P, Weisbuch C, Speck J S, Mishra U K 2006 J. Appl. Phys. 100 054314
[9] Zhen C C, Yeh C C, 2000 Adv. Mater. (Weinheim, Ger.) 12 738
[10] Yoshizawz M, Kikuchi A, Mori M, Fujita N, Kishino K 1997 Jpn. J. Appl. Phys. 236 459
[11] Kim H M, Kim D S, Kim D Y, Wkang T W, Cho Y H, Chung K S 2002 Appl. Phys. Lett. 81 2193
[12] Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T 2005 Nano Letters 5 1847
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[1] Chang C Y, Wu Y R 2010 IEEE Journal of Quantum Electronics 46 6 884
[2] Neufeld C J, Schaake C, Grundmann M, Fichtenbaum N A, Keller S, Mishra U K 2007 Phys. Stat. Sol.(c) 45 1605
[3] Kishino K, Kikuchi A, Sekiguchi H, Ishizawa S 2007 Gallium Nitride Materials and Device Ⅱ 6473 64730T
[4] Kim H M, Cho Y H, Lee H, Kim Suk II, Ryu S R, Kim D Y, Kang T W, Chung K S 2004 Nano Letters 46 1059
[5] Hsueh T H, Huang H W, Kao C C, Chang Y H, Yang M C, Kuo H C, Wang S C 2005 Jpn. J. Appl. Phys. 44 4B 2661
[6] Charlton M D B, Lee T, Zoorob M E, Shields P A, Wang W N 2007 Seventh International Conference on Solid State Lighting San Diego, California August 27—29, 2007 6669 p14
[7] Hu H Y, Lu L, Du W, Liu H W, Kan Q, Wang C X, Xu X S, Chen H D 2007 Solid State Lighting and Solar Energy Technologies 6841 68410J-1-4
[8] Keller S, Schaake C, Fichtenbaum N A, Neufeld C J, Wu Y, McGroddy K, David A, DenBaars S P, Weisbuch C, Speck J S, Mishra U K 2006 J. Appl. Phys. 100 054314
[9] Zhen C C, Yeh C C, 2000 Adv. Mater. (Weinheim, Ger.) 12 738
[10] Yoshizawz M, Kikuchi A, Mori M, Fujita N, Kishino K 1997 Jpn. J. Appl. Phys. 236 459
[11] Kim H M, Kim D S, Kim D Y, Wkang T W, Cho Y H, Chung K S 2002 Appl. Phys. Lett. 81 2193
[12] Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T 2005 Nano Letters 5 1847
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