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Nanocrystalline silicon nc-Si:H/SiC:H multilayers were fabricated by thermal annealing of the hydrogenated amorphous Si α-Si:H/hydrogenated amorphous silicon carbide α-SiC:H stacked structures prepared by plasma enhanced chemical vapor deposition (PECVD) system at 900–1000℃. The microstructures of annealed samples were investigated by Raman scattering, cross-section transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. Results demonstrate that the size of Si grains formed can be controlled by the α-Si:H layer thickness and annealing temperature. Optical absorption measurements show that the optical bandgap of the multilayered structures increases and the absorption coefficient decreases with diminishing Si grain size. However, the absorption coefficient and the optical bandgap of the multilayers are not influenced by the α-SiC:H layer thickness when the size of Si grains is kept constant.
[1] Green M A 2003 Third Generation Photovoltaics: Advnced Solar Energy Conversion (Springer) pp1-4
[2] Cho E C, Green M A, Conibeer G, Song D, Cho Y H, Scardera G, Huang S, Park S, Hao X J, Huang Y, Van Dao L 2007 Adv. Optoelectron. 2007 1
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[16] Ma X F, Wang Y Z, Zhou C Y 2011 Acta Phys. Sin. 60 068102 (in Chinese) [马小凤, 王懿喆, 周呈悦 2011 60 068102]
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[19] Song D, Cho E-C, Conibeer G, Huang Y, Flynn C, Green M A 2008 J. Appl. Phys. 103 083544
[20] Rui Y, Li S, Cao Y, Xu J, Li W, Chen K 2013 Appl. Surf. Sci. 269 37
[21] Nychyporuk T, Lemiti M 2011 Solar Cells-Silicon Wafer-Based Technologies (Rijeka: Intech) pp 139-176
[22] Conibeer G, Green M, Corkish R, Cho Y 2006 Thin Solid Films 511-512 654
[23] Rui Y, Li S, Xu J, Song C, Jiang X 2011 J. Appl. Phys. 110 064322
[24] Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M 2007 Jpn. J. Appl. Phys. 46 L833
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[1] Green M A 2003 Third Generation Photovoltaics: Advnced Solar Energy Conversion (Springer) pp1-4
[2] Cho E C, Green M A, Conibeer G, Song D, Cho Y H, Scardera G, Huang S, Park S, Hao X J, Huang Y, Van Dao L 2007 Adv. Optoelectron. 2007 1
[3] Conibeer G, Green M, Cho E C, Konig D, Cho Y H, Fangsuwannarak T, Scardera G, Pink E, Huang Y, Puzzer T, Huang S, Song D, Flynn C, Park S, Hao X, Mansfield D 2008 Thin Solid Films 516 6748
[4] Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[5] Kuo K Y, Huang P R, Lee P T 2013 Nanotechnology 24 195701
[6] Kunle M, Janz S, Nickel K G, Heidt A, Luysberg M, Eibl O 2013 Sol. Energy Mater. Sol. Cells 5 11
[7] Chaudhuri P, Kole A, Haider G 2013 J. Appl. Phys. 113 064313
[8] Jiang C W, Green M A 2006 J. Appl. Phys. 99 114902
[9] Tao Y L, Zuo Y H, Zheng J, Xue C L, Cheng B W, Wang Q M, Xu J 2012 Chin. Phys. B 21 077402
[10] Ma Z Y, Guo S H, Chen D Y, Wei D Y, Yao Y, Zhou J, Huang R, Li W, Xu J, Xu L, Huang X F, Chen K J, Feng D 2008 Chin. Phys. B 17 303
[11] Perez-Wurfl I, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[12] Cao Y Q, Xu X, Li S X, Li W, Xu J, Chen K 2013 Front. Optoelectron. 6 228
[13] Lu Z H, Lockwood D J, Banbeau J M 1995 Nature 378 258
[14] Zhang L, Chen K, Huang X, Wang L, Xu J, Li W 2003 Appl. Phys. A 77 485
[15] Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403 (in Chinese)[刘艳松, 陈铠, 乔峰, 黄信凡, 韩培高, 钱波, 马忠元, 李伟, 徐骏, 陈坤基 2006 55 5403]
[16] Ma X F, Wang Y Z, Zhou C Y 2011 Acta Phys. Sin. 60 068102 (in Chinese) [马小凤, 王懿喆, 周呈悦 2011 60 068102]
[17] López-Vidrier J, Hernández S, Samà J, Canino M, Allegrezza M, Bellettato M, Shukla R, Schnabel M, Lóper P, López-Conesa L, Estradé S, Peiró F, Janz S, Garrido B 2013 Mater. Sci. Eng. B 178 639
[18] Wang Q, Ding J N, He Y L, Xue W, Fan Z 2007 Acta Phys. Sin. 56 4834 (in Chinese)[王权, 丁建宁, 何宇亮, 薛伟, 范真 2007 56 4834]
[19] Song D, Cho E-C, Conibeer G, Huang Y, Flynn C, Green M A 2008 J. Appl. Phys. 103 083544
[20] Rui Y, Li S, Cao Y, Xu J, Li W, Chen K 2013 Appl. Surf. Sci. 269 37
[21] Nychyporuk T, Lemiti M 2011 Solar Cells-Silicon Wafer-Based Technologies (Rijeka: Intech) pp 139-176
[22] Conibeer G, Green M, Corkish R, Cho Y 2006 Thin Solid Films 511-512 654
[23] Rui Y, Li S, Xu J, Song C, Jiang X 2011 J. Appl. Phys. 110 064322
[24] Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M 2007 Jpn. J. Appl. Phys. 46 L833
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