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Phosphorus ions are implanted into nanocrystalline diamond (NCD) films followed by being annealed at different temperatures. The results show that the samples exhibit good n-type conductivity when annealing temperature is increased to 800 ℃ and above. Raman spectroscopy and electron paramagnetic resonance measurements display that the sample with a larger quantity of diamond phase with better lattice perfection has a lower resistivity. It is indicated that nano-sized diamond grains make contributions to the n-type conductivity in the films. After 1000 ℃ annealing, the amorphous carbon grain boundaries become more ordered, which leads the dangling carbon bonds to decrease and the resistivity of the film to increases. It is revealed that the amorphous carbon grain boundaries supply a conduction path to the n-type phosphorus ion implanted nanocrystalline diamond grains.
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Keywords:
- nanocrystalline diamond films /
- n-type /
- phosphorus ion implantation
[1] Raina S, Kang W P, Davidson J L 2008 Diam. Relat. Mater. 17 790
[2] Williams O A, Nesladek M, Daenen M, Michaelson S, Hoffman A, Osawa E, Haenen K, Jackman R B 2008 Diam. Relat. Mater. 17 1080
[3] Butler J E, Surnant AV 2008 Chem. Vap. Depos. 14 145
[4] Beloborodov I S, Zapol P, Gruen D M, Curtiss L A 2006 Phys. Rev. B 74 235434
[5] Mares J J, Hubik P, Kristofik J, Kindl D, Fanta M, Nesladek M, Williams O, Gruen D M 2006 Appl. Phys. Lett. 88 092107
[6] Williams O A 2006 Semicond. Sci. Technol. 21 R49
[7] Vlasov I I, Goovaerts E, Ralchenko V G, Konov V I, Khomich A V, Kanzyuba M V 2007 Diam. Relat. Mater. 16 2074
[8] Hu Q, Hirai M, Joshi R K, Kumar A 2009 J. Phys. D: Appl. Phys. 42 025301
[9] Arenal R, Montagnac G, Bruno P, Gruen D M 2007 Phys. Rev. B 76 245316
[10] Kato H, Yamasaki S, Okushi H 2005 Appl. Phys. Lett. 86 222111
[11] Pernot J, Koizumi S 2008 Appl. Phys. Lett. 93 052105
[12] Koizumi S, Teraji T, Kanda H 2000 Diam. Relat. Mater. 9 935
[13] Achatz P, Williams O A, Bruno P, Gruen D M, Garrido J A, Stutzmann M 2006 Phys. Rev. B 74 155429
[14] Karihara S A, Antonelli A, Bernhole J, Car R 1991 Phys. Rev. Lett. 66 2010
[15] Nishimori T, Nakano K, Sakamoto H, Takakuwa Y 1997 Appl. Phys. Lett. 71 945
[16] Deguchi M, Kitabatake M, Hirao T 1996 Thin Solid Films 281—282 267
[17] Kalish R 2007 J. Phys. D: Appl. Phys. 40 6467
[18] Klauser F, Steinmuller-Nethl D, Kaindl R, Bertel E, Memmel N 2010 Chem. Vap. Depos. 16 127
[19] Ferrari A C, Robertson J 2001 Phys. Rev. B 63 121405
[20] Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
[21] Prawer S, Nugent K W, Jamieson D N, Orwa J O, Bursill L A, Peng J L 2000 Chem. Phys. Lett. 332 93
[22] Prawer S, Nemanich R J 2009 Phil. Trans. Roy. Soc. Lond. A 362 2537
[23] Pan J P, Hu X J, Lu L P, Yin C 2010 Acta Phys. Sin. 59 7410 (in Chinese) [潘金平、 胡晓君、 陆利平、 印 迟 2010 59 7410]
[24] Sails S R, Gardiner D J, Bowden M, Savage J, Rodway D 1996 Diam. Relat. Mater. 5 589
[25] Tamor M A, Haire J A, Wu C H, Hass K C 1989 Appl. Phys. Lett. 54 123
[26] Chhowalla M, Ferrari A C, Robertson J, Amaratunga A J 2000 Appl. Phys. Lett. 76 1419
[27] Poole C P 1983 Electron Spin Resonance (New York: Wiley)
[28] Zvanut M E, Carlos W E, Freitas J A, Jamison K D, Hellmer R P 1994 Appl. Phys. Lett. 65 2287
[29] Dubois M, Guerin K, Petit E, Batisse N, Hamwi A, Komatsu N, Giraudet J, Pirotte P, Masin F 2009 J. Phys. Chem. C 113 10371
[30] Isoya J, Kanda H, Sakaguchi I 1997 Radiat. Phys. Chem. 50 321
[31] Brosious P R, Corbett J W, Bourgoin J C 1974 Phys. Stat. Sol (a) 21 677
[32] Teicher M, Beserman R 1982 J. Appl. Phys. 53 1467
[33] Barklie R C 2001 Diam. Relat. Mater. 10 174
[34] Show Y, Matsuoka F, Izumi T, Deguchi M, Kitabatake M, 1997 Appl. Surf. Sci. 117—118 574
[35] Dasgupta D, Demichelis F, Pirri C F 1991 Phys. Rev. B 43 2131
[36] Hu X J, Dai Y B, He X C, Shen H S, Li R B 2002 Acta Phys. Sin. 51 1388 (in Chinese) [胡晓君、 戴永兵、 何贤昶、 沈荷生、 李荣斌 2002 51 1388]
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[1] Raina S, Kang W P, Davidson J L 2008 Diam. Relat. Mater. 17 790
[2] Williams O A, Nesladek M, Daenen M, Michaelson S, Hoffman A, Osawa E, Haenen K, Jackman R B 2008 Diam. Relat. Mater. 17 1080
[3] Butler J E, Surnant AV 2008 Chem. Vap. Depos. 14 145
[4] Beloborodov I S, Zapol P, Gruen D M, Curtiss L A 2006 Phys. Rev. B 74 235434
[5] Mares J J, Hubik P, Kristofik J, Kindl D, Fanta M, Nesladek M, Williams O, Gruen D M 2006 Appl. Phys. Lett. 88 092107
[6] Williams O A 2006 Semicond. Sci. Technol. 21 R49
[7] Vlasov I I, Goovaerts E, Ralchenko V G, Konov V I, Khomich A V, Kanzyuba M V 2007 Diam. Relat. Mater. 16 2074
[8] Hu Q, Hirai M, Joshi R K, Kumar A 2009 J. Phys. D: Appl. Phys. 42 025301
[9] Arenal R, Montagnac G, Bruno P, Gruen D M 2007 Phys. Rev. B 76 245316
[10] Kato H, Yamasaki S, Okushi H 2005 Appl. Phys. Lett. 86 222111
[11] Pernot J, Koizumi S 2008 Appl. Phys. Lett. 93 052105
[12] Koizumi S, Teraji T, Kanda H 2000 Diam. Relat. Mater. 9 935
[13] Achatz P, Williams O A, Bruno P, Gruen D M, Garrido J A, Stutzmann M 2006 Phys. Rev. B 74 155429
[14] Karihara S A, Antonelli A, Bernhole J, Car R 1991 Phys. Rev. Lett. 66 2010
[15] Nishimori T, Nakano K, Sakamoto H, Takakuwa Y 1997 Appl. Phys. Lett. 71 945
[16] Deguchi M, Kitabatake M, Hirao T 1996 Thin Solid Films 281—282 267
[17] Kalish R 2007 J. Phys. D: Appl. Phys. 40 6467
[18] Klauser F, Steinmuller-Nethl D, Kaindl R, Bertel E, Memmel N 2010 Chem. Vap. Depos. 16 127
[19] Ferrari A C, Robertson J 2001 Phys. Rev. B 63 121405
[20] Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
[21] Prawer S, Nugent K W, Jamieson D N, Orwa J O, Bursill L A, Peng J L 2000 Chem. Phys. Lett. 332 93
[22] Prawer S, Nemanich R J 2009 Phil. Trans. Roy. Soc. Lond. A 362 2537
[23] Pan J P, Hu X J, Lu L P, Yin C 2010 Acta Phys. Sin. 59 7410 (in Chinese) [潘金平、 胡晓君、 陆利平、 印 迟 2010 59 7410]
[24] Sails S R, Gardiner D J, Bowden M, Savage J, Rodway D 1996 Diam. Relat. Mater. 5 589
[25] Tamor M A, Haire J A, Wu C H, Hass K C 1989 Appl. Phys. Lett. 54 123
[26] Chhowalla M, Ferrari A C, Robertson J, Amaratunga A J 2000 Appl. Phys. Lett. 76 1419
[27] Poole C P 1983 Electron Spin Resonance (New York: Wiley)
[28] Zvanut M E, Carlos W E, Freitas J A, Jamison K D, Hellmer R P 1994 Appl. Phys. Lett. 65 2287
[29] Dubois M, Guerin K, Petit E, Batisse N, Hamwi A, Komatsu N, Giraudet J, Pirotte P, Masin F 2009 J. Phys. Chem. C 113 10371
[30] Isoya J, Kanda H, Sakaguchi I 1997 Radiat. Phys. Chem. 50 321
[31] Brosious P R, Corbett J W, Bourgoin J C 1974 Phys. Stat. Sol (a) 21 677
[32] Teicher M, Beserman R 1982 J. Appl. Phys. 53 1467
[33] Barklie R C 2001 Diam. Relat. Mater. 10 174
[34] Show Y, Matsuoka F, Izumi T, Deguchi M, Kitabatake M, 1997 Appl. Surf. Sci. 117—118 574
[35] Dasgupta D, Demichelis F, Pirri C F 1991 Phys. Rev. B 43 2131
[36] Hu X J, Dai Y B, He X C, Shen H S, Li R B 2002 Acta Phys. Sin. 51 1388 (in Chinese) [胡晓君、 戴永兵、 何贤昶、 沈荷生、 李荣斌 2002 51 1388]
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