nc-Si：H/α-SiC：H多层膜的结构与光吸收特性

马蕾; 蒋冰; 陈乙豪; 沈波; 彭英才

doi:10.7498/aps.63.136804

摘要

利用等离子体增强化学气相沉积工艺制备了α-Si：H/α-SiC：H多层膜结构，并在900–1000℃下进行了高温退火处理，获得了尺寸可控的nc-Si：H/α-SiC：H多层膜样品. Raman测量表明，900℃以上的退火温度可以使α-Si：H层发生限制晶化. 透射电子显微镜照片显示出α-Si：H层中形成的Si纳米晶粒的纵向尺寸被α-SiC：H层所限制，而与α-Si：H层的厚度相当，晶粒的择优取向是晶向. 傅里叶变换红外吸收谱则清楚地显示出，高温退火导致多层膜中的H原子大量逸出，以及α-SiC：H层中有更多的Si-C 形成. 对nc-Si：H/α-SiC：H多层膜吸收系数的测量证明，多层膜的吸收主要由nc-Si：H层支配，随着Si 晶粒尺寸减小，多层膜的光学带隙增大，吸收系数降低. 而当nc-Si：H层厚度不变时，α-SiC：H层厚度变化则不会引起多层膜吸收系数以及光学带隙的改变.

关键词:

Abstract

Nanocrystalline silicon nc-Si:H/SiC:H multilayers were fabricated by thermal annealing of the hydrogenated amorphous Si α-Si:H/hydrogenated amorphous silicon carbide α-SiC:H stacked structures prepared by plasma enhanced chemical vapor deposition (PECVD) system at 900–1000℃. The microstructures of annealed samples were investigated by Raman scattering, cross-section transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. Results demonstrate that the size of Si grains formed can be controlled by the α-Si:H layer thickness and annealing temperature. Optical absorption measurements show that the optical bandgap of the multilayered structures increases and the absorption coefficient decreases with diminishing Si grain size. However, the absorption coefficient and the optical bandgap of the multilayers are not influenced by the α-SiC:H layer thickness when the size of Si grains is kept constant.

Keywords:

作者及机构信息

1.
河北大学电子信息工程学院, 保定 071002;

2.
北京大学人工微结构与介观物理国家重点实验室, 北京 100871

基金项目: 国家自然科学基金（批准号：61306098）、河北省自然科学基金（批准号：E2012201088，F2013201196）、河北省高等学校科学技术研究项目（批准号：2011237，ZH2012019）和北京大学介观物理国家重点实验室开放性课题资助的课题.

Authors and contacts

1.
College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China;

2.
State Key Laboratory for Artificial Microstructure and Mesoscope Physics, Beijing University, Beijing 100871, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61306098), the Natural Science Foundation of Hebei Province, China (Grant Nos. E2012201088, F2013201196), the Research Foundation of Education Bureau of Hebei Province, China (Grant Nos. 2011237, ZH2012019), and the State Key Laboratoy for Artificial Microstructure and Mesoscopic Physics, Pecking University, Beijing, China.

参考文献

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[24]	Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M 2007 Jpn. J. Appl. Phys. 46 L833

施引文献

[1]	Green M A 2003 Third Generation Photovoltaics: Advnced Solar Energy Conversion (Springer) pp1-4
[2]	Cho E C, Green M A, Conibeer G, Song D, Cho Y H, Scardera G, Huang S, Park S, Hao X J, Huang Y, Van Dao L 2007 Adv. Optoelectron. 2007 1
[3]	Conibeer G, Green M, Cho E C, Konig D, Cho Y H, Fangsuwannarak T, Scardera G, Pink E, Huang Y, Puzzer T, Huang S, Song D, Flynn C, Park S, Hao X, Mansfield D 2008 Thin Solid Films 516 6748
[4]	Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[5]	Kuo K Y, Huang P R, Lee P T 2013 Nanotechnology 24 195701
[6]	Kunle M, Janz S, Nickel K G, Heidt A, Luysberg M, Eibl O 2013 Sol. Energy Mater. Sol. Cells 5 11
[7]	Chaudhuri P, Kole A, Haider G 2013 J. Appl. Phys. 113 064313
[8]	Jiang C W, Green M A 2006 J. Appl. Phys. 99 114902
[9]	Tao Y L, Zuo Y H, Zheng J, Xue C L, Cheng B W, Wang Q M, Xu J 2012 Chin. Phys. B 21 077402
[10]	Ma Z Y, Guo S H, Chen D Y, Wei D Y, Yao Y, Zhou J, Huang R, Li W, Xu J, Xu L, Huang X F, Chen K J, Feng D 2008 Chin. Phys. B 17 303
[11]	Perez-Wurfl I, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[12]	Cao Y Q, Xu X, Li S X, Li W, Xu J, Chen K 2013 Front. Optoelectron. 6 228
[13]	Lu Z H, Lockwood D J, Banbeau J M 1995 Nature 378 258
[14]	Zhang L, Chen K, Huang X, Wang L, Xu J, Li W 2003 Appl. Phys. A 77 485
[15]	Liu Y S, Chen K, Qiao F, Huang X F, Han P G, Qian B, Ma Z Y, Li W, Xu J, Chen K J 2006 Acta Phys. Sin. 55 5403 (in Chinese)[刘艳松, 陈铠, 乔峰, 黄信凡, 韩培高, 钱波, 马忠元, 李伟, 徐骏, 陈坤基 2006 55 5403]
[16]	Ma X F, Wang Y Z, Zhou C Y 2011 Acta Phys. Sin. 60 068102 (in Chinese) [马小凤, 王懿喆, 周呈悦 2011 60 068102]
[17]	López-Vidrier J, Hernández S, Samà J, Canino M, Allegrezza M, Bellettato M, Shukla R, Schnabel M, Lóper P, López-Conesa L, Estradé S, Peiró F, Janz S, Garrido B 2013 Mater. Sci. Eng. B 178 639
[18]	Wang Q, Ding J N, He Y L, Xue W, Fan Z 2007 Acta Phys. Sin. 56 4834 (in Chinese)[王权, 丁建宁, 何宇亮, 薛伟, 范真 2007 56 4834]
[19]	Song D, Cho E-C, Conibeer G, Huang Y, Flynn C, Green M A 2008 J. Appl. Phys. 103 083544
[20]	Rui Y, Li S, Cao Y, Xu J, Li W, Chen K 2013 Appl. Surf. Sci. 269 37
[21]	Nychyporuk T, Lemiti M 2011 Solar Cells-Silicon Wafer-Based Technologies (Rijeka: Intech) pp 139-176
[22]	Conibeer G, Green M, Corkish R, Cho Y 2006 Thin Solid Films 511-512 654
[23]	Rui Y, Li S, Xu J, Song C, Jiang X 2011 J. Appl. Phys. 110 064322
[24]	Kurokawa Y, Tomita S, Miyajima S, Yamada A, Konagai M 2007 Jpn. J. Appl. Phys. 46 L833

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