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Ti/Al contacts have been deposited by electron beam Evaporation onto N-polar n-type surfaces of GaN-based vertical structure LED on Si substrate. The effect of AlN buffer layer on ohmic contact of these chips has been investigated through I-V characteristic. The results shown Ti/Al contacts prepared on N-polar n-type surface without AlN buffer layer became ohmic contact after annealing in the temperature range of 500—600℃. The as-deposited Ti/Al contacts on N-polar n-type surface with AlN buffer layer shown ohmic behaviors with a specific contact resistivity of 2×10-5 Ωcm2 and maintained ohmic contact characteristics until anneal at 600℃. Therefore, The exsiting of AlN buffer layer is the key to forming highthermal stability ohmic contact for GaN-based vertical structure LED on Si substrate.
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Keywords:
- Si substrate /
- N-polar /
- AlN buffer layer /
- ohmic contact
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[16] Kwak J S, Lee K Y, Han J Y, Cho J, Chae S, Nam O H, Park Y 2001 Appl. Phys. Lett. 79 3254
[17] Jeon J W, Seong T Y, Kim H, Kim K K 2009 Appl. Phys. Lett. 94 2102
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[20] Mohammad S N 2006 J. Appl. Phys. 100 3708
[21] Luther B P, DeLucca J M, Mohney S E, Karlicek J R F 2006 Appl. Phys. Lett. 71 3859
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[1] Jiang Y, Luo Y, Wang L, Li H T, Xi G Y, Zhao W, Han Y J 2009 Acta Phys. Sin. 58 3468 ( in Chinese ) [江 洋、罗 毅、汪 莱、李洪涛、席光义、赵 维、韩彦军 2009 58 3468 ]
[2] Lee Y J, Lin S Y, Chiu C H, Lu T C, Kuo H C, Wang S C, Chhajed S, Kim J K, Schubert E F 2009 Appl. Phys. Lett. 94 1111
[3] Song X Y, Zeng X H, Zhang J B, Zeng X H, Dong Y J 2010 Acta Phys. Sin. 59 ( in Chinese ) [宋雪云、曾祥华、张俊兵、曾祥华、董雅娟 2010 59 ]
[4] Guo X, Schubert E F 2001 J. Appl. Phys. 90 4191
[5] Guo X, Schubert E F 2001 Appl. Phys. Lett. 78 3337
[6] Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta Phys. Sin. 57 472 ( in Chinese ) [沈光地、张剑铭、邹德恕、徐 晨、顾晓玲 2008 57 472 ]
[7] Xue Z Q, Chen C, Huang S R, Zhang B P 2010 Acta Phys. Sin. 59 7( in Chinese ) [薛正朝、陈 朝、黄生荣、张保平 2010 59 7 ]
[8] Cao X A, Arthur S D 2004 Appl. Phys. Lett. 85 3971
[9] Tan B S, Yuan S, Kang X J 2004 Appl. Phys. Lett. 84 2757
[10] Xiong C B, Jiang F Y, Fang W Q, W L 2007 J. Lumin. 122-123 185
[11] Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta Phys. Sin. 57 3176 ( in Chinese ) [熊传兵、江风益、方文卿、王 立、莫春兰 2008 57 3176 ]
[12] Jang H W, Lee S, Ryu S W, Son J H, Song Y H, Lee J L 2009 Electrochem. Solid-State Lett. 12 H405
[13] Jung S Y, Seong T Y, Kim H, Park K S, Park J G, Namgoong G 2009 Electrochem. Solid-State Lett. 12 H275
[14] Kim H, Ryou J H, Dupuis R D, Lee S N, Park Y, Jeon J W, Seong T Y 2008 Appl. Phys. Lett. 93 2106
[15] Jang T, Lee S N, Nam O H, Park Y 2006 Appl. Phys. Lett. 88
[16] Kwak J S, Lee K Y, Han J Y, Cho J, Chae S, Nam O H, Park Y 2001 Appl. Phys. Lett. 79 3254
[17] Jeon J W, Seong T Y, Kim H, Kim K K 2009 Appl. Phys. Lett. 94 2102
[18] Mo C L, Fang W Q, Pu Y, Liu H C, Jiang F Y 2005 J. Cryst. Growth. 285 312
[19] Pelletier J, Gervais D, Pomot C 1983 J. Appl. Phys. 55 994
[20] Mohammad S N 2006 J. Appl. Phys. 100 3708
[21] Luther B P, DeLucca J M, Mohney S E, Karlicek J R F 2006 Appl. Phys. Lett. 71 3859
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