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采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小.
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关键词:
- M/PS/Si微结构 /
- 孔隙率 /
- I-V特性 /
- 欧姆接触
In this paper, porous silicon (PS) was prepared in a double-tank cell using the electrochemical corrosion method. Subsequently, different metal films for electrical contacts were deposited on the PS samples by magnetron sputtering to form the M/PS/Si microstructure. The PS surface morphology was characterized by SEM. The electrical properties of the M/PS/Si microstructure were studied through the I-V characteristic tests. It was shown that Pt can form ohmic contact with PS. The I-V characteristic curves were formed from two parts:linear part and nonlinear part. However, Cu formed Schottky contact with PS and its I-V curves showed rectification characteristics. The rectification ratio decreased when the porosity of the PS increased.-
Keywords:
- M/PS/Si microstructure /
- porosity /
- I-V characteristic /
- ohmic contact
[1] Chang C C, Chen L C 1997 Materials Letters 32 287
[2] Kim H J, Kim Y Y, Lee K W 2010 Current Applied Physics 10 181
[3] Massera E, Nasti I, Quercia L, Rea I, Francia G Di 2004 Sensors and Actuators B:Chemical 102 195
[4] Irajizad A, Rahimi F, Chavoshi M, Ahadian M M 2004 Sensors and Actuators B:Chemical 100 341
[5] Dücsö C S, Vázsonyi , dám M, Szabó I, Bársony I, Gardeniers J G E,Berg A Van Den 1997 Sensors and Actuators A:Physical 60 235
[6] Kronast W, Müller B, Siedel W, Stoffel A 2001 Sensors and Actuators A:Physical 87 188
[7] Tsamis C, Nassiopoulou A G, Tserepi A 2003 Sensors and Actuators B:Chemical 95 78
[8] Papadimitriou D, Tsamis C, Nassiopoulou A G 2004 Sensors and Actuators B:Chemical 103 356
[9] Fang Z Q, Hu M, Zhang W, Zhang X R 2008 Acta Phys. Sin. 57 103 (in Chinese) [房振乾、胡 明、张 伟、张绪瑞 2008 57 103]
[10] Xu L J, Hu M, Yang H B, Yang M L, Zhang J 2010 Acta Phys. Sin. 59 8794 (in Chinese) [许路加、胡 明、杨海波、杨孟琳、张 洁 2010 59 8794]
[11] Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博、王 坤、陈田祥、陈 迪、姚淑德 2008 57 2445]
[12] Huang W, Chen Z Z, Chen Y, Shi E W, Zhang J Y, Liu Q F, Liu Q 2010 Acta Phys. Sin. 59 3466 (in Chinese) [黄 维、陈之战、陈 义、施尔畏、张静玉、刘庆峰、刘 茜 2010 59 3466]
[13] Ansari Z A, Hong Kwangpyo, Lee Chongmu 2002 Materials Science and Engineering B 90 103
[14] Arenas M Concepción, Hu Hailin, Río J Antonio del, Sánchez Aarón, Nicho M E 2006 Solar Energy Materials and Solar Cells 90 2413
[15] Jemai R, Alaya A, Meskini O, Nouiri M, Mghaieth R, Khirouni K, Alaya S 2007 Materials Science and Engineering B 137 263
[16] Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波、胡 明、张 伟、张绪瑞、李德军、王明霞 2007 56 4032]
[17] Remaki B, Populaire C, Lysenko V, Barbier D 2003 Materials Science and Engineering B 101 313
[18] Beale MIJ 1985 Journal of Crystal Growth 73 622
[19] Bazrafkan I, Dariani RS 2009 Physica B:Condensed Matter 404 1638
[20] Molnár K, Mohácsy T, Abdulhadi A H, Volk J, Bársony I 2003 Physica Status Solidi A 197 446
[21] Korcala Andrzej, Baa Wacaw, Bratkowski Artur, Borowski Piotr, ukasiak Zbigniew 2006 Optical Materials 28 143
[22] Mkhitaryan Z H, Shatveryan A A, Adamyan A Z, Aroutiounian V M 2005 Optical Materials 27 962
[23] Vinod P N 2009 Journal of Alloys and Compounds 470 393
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[1] Chang C C, Chen L C 1997 Materials Letters 32 287
[2] Kim H J, Kim Y Y, Lee K W 2010 Current Applied Physics 10 181
[3] Massera E, Nasti I, Quercia L, Rea I, Francia G Di 2004 Sensors and Actuators B:Chemical 102 195
[4] Irajizad A, Rahimi F, Chavoshi M, Ahadian M M 2004 Sensors and Actuators B:Chemical 100 341
[5] Dücsö C S, Vázsonyi , dám M, Szabó I, Bársony I, Gardeniers J G E,Berg A Van Den 1997 Sensors and Actuators A:Physical 60 235
[6] Kronast W, Müller B, Siedel W, Stoffel A 2001 Sensors and Actuators A:Physical 87 188
[7] Tsamis C, Nassiopoulou A G, Tserepi A 2003 Sensors and Actuators B:Chemical 95 78
[8] Papadimitriou D, Tsamis C, Nassiopoulou A G 2004 Sensors and Actuators B:Chemical 103 356
[9] Fang Z Q, Hu M, Zhang W, Zhang X R 2008 Acta Phys. Sin. 57 103 (in Chinese) [房振乾、胡 明、张 伟、张绪瑞 2008 57 103]
[10] Xu L J, Hu M, Yang H B, Yang M L, Zhang J 2010 Acta Phys. Sin. 59 8794 (in Chinese) [许路加、胡 明、杨海波、杨孟琳、张 洁 2010 59 8794]
[11] Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博、王 坤、陈田祥、陈 迪、姚淑德 2008 57 2445]
[12] Huang W, Chen Z Z, Chen Y, Shi E W, Zhang J Y, Liu Q F, Liu Q 2010 Acta Phys. Sin. 59 3466 (in Chinese) [黄 维、陈之战、陈 义、施尔畏、张静玉、刘庆峰、刘 茜 2010 59 3466]
[13] Ansari Z A, Hong Kwangpyo, Lee Chongmu 2002 Materials Science and Engineering B 90 103
[14] Arenas M Concepción, Hu Hailin, Río J Antonio del, Sánchez Aarón, Nicho M E 2006 Solar Energy Materials and Solar Cells 90 2413
[15] Jemai R, Alaya A, Meskini O, Nouiri M, Mghaieth R, Khirouni K, Alaya S 2007 Materials Science and Engineering B 137 263
[16] Yang H B, Hu M, Zhang W, Zhang X R, Li D J, Wang M X 2007 Acta Phys. Sin. 56 4032 (in Chinese) [杨海波、胡 明、张 伟、张绪瑞、李德军、王明霞 2007 56 4032]
[17] Remaki B, Populaire C, Lysenko V, Barbier D 2003 Materials Science and Engineering B 101 313
[18] Beale MIJ 1985 Journal of Crystal Growth 73 622
[19] Bazrafkan I, Dariani RS 2009 Physica B:Condensed Matter 404 1638
[20] Molnár K, Mohácsy T, Abdulhadi A H, Volk J, Bársony I 2003 Physica Status Solidi A 197 446
[21] Korcala Andrzej, Baa Wacaw, Bratkowski Artur, Borowski Piotr, ukasiak Zbigniew 2006 Optical Materials 28 143
[22] Mkhitaryan Z H, Shatveryan A A, Adamyan A Z, Aroutiounian V M 2005 Optical Materials 27 962
[23] Vinod P N 2009 Journal of Alloys and Compounds 470 393
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