60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响

张孝富; 李豫东; 郭旗; 罗木昌; 何承发; 于新; 申志辉; 张兴尧; 邓伟; 吴正新

doi:10.7498/aps.62.076106

摘要

采用60Co γ射线源对高铝组分Al0.5Ga0.5N盲紫外p-i-n结构光探测器和Si基可见光p-i-n结构探测器进行了累计剂量分别为0.1, 1, 10 Mrad(Si)总剂量辐照实验. 实验发现, 随着辐照剂量的增加, AlGaN盲紫外p-i-n结构光探测器的理想因子显著增大, 辐照后理想因子n > 2; 而Si基可见光p-i-n 结构探测器的理想因子随辐照剂量的变化并不明显. AlGaN盲紫外p-i-n结构光探测器理想因子的退化可能主要是因为欧姆接触性能的退化, Si基可见光p-i-n结构探测器的理想因子的变化则可能是由于敏感层的退化.

关键词:

Abstract

High Al content AlxGa1-xN solar-blind photodetector and Si p-i-n visible light detector were irradiated with 60Co γ-rays up to 0.1, 1, 10 Mrad(Si). With the increase of total radiation dose, the ideality factor of AlxGa1-xN p-i-n diode saw a significant rise and the ideality factor n is grater than 2 with a total dose up to 10 Mrad(Si); the ideality factor of Si p-i-n diode, however, changed only slightly even up to 10 Mrad(Si). The degradation of AlxGa1-xN p-i-n diode might be attributed to the deterioration of Ohmic contacts, however, to some extent, the slight increase of the Si p-i-n diode might be due to the degradation of the insensitive layer.

Keywords:

作者及机构信息

1.
中国科学院新疆理化技术研究所, 乌鲁木齐 830011;

2.
新疆电子信息材料与器件重点实验室, 乌鲁木齐 830011;

3.
重庆光电技术研究所, 重庆 400060

Authors and contacts

1.
Xinjiang technical institute of Physics and Chemistry, University of Chinese Academy of Sciences, Urumqi 830011, China;

2.
Xinjiang Key Laboratory of Electronic information materials and devices, Urumqi 830011, China;

3.
Chongqing Optoelectronics Research Institute, Chongqing 400060, China

参考文献

[1]	Long J P, Varadaraajan S, Matthews J, Schetzina J F 2002 Opto-Electronics Review 10 251
[2]	Kolb C E, Ryali S B, Wormhoudt J C 1988 Proc. SPIE 0932 2
[3]	Yan T J, Chong M, Zhao D G, Zhang S, Chen L H 2011 Inrared and Laser Engineering 40 32 (in Chinese) [颜廷静, 种明, 赵德刚, 张爽, 陈良惠 2011 红外与激光工程 40 32]
[4]	Zhang L Q, Zhang C H, Yang Y T, Yao C F, Li B S, Sun Y M and Song S J 2009 Chin. Phys. Lett. 26 036101
[5]	Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (Beijing: National Defence Industry Press) p20 (in Chinese) [Claeys C, Simoen E著, 刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京: 国防工业出版社) 第20页]
[6]	Lv L, Zhang J C, Li L, Ma X H, Cao Y R and Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese) [吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃 2012 61 057202]
[7]	Ohyama H, Takakura K, Hanada M, Nagano T, Yoshino K, Nakashima T, Kuboyama S, Simoen E, Claeys C 2010 Materials Science and Engineering B 173 57
[8]	Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I 2004 Solid-State Electronics 48 471
[9]	Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912
[10]	Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah-Ardalan S, Wilkins R, Mishra U M, Dettmer R W 2004 IEEE Trans. Nucl. Sci. 51 293
[11]	Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, Cantin J L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733
[12]	Hong-Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas Jr, Soohwan Jang, Jennifer Hite, Charles R. Eddy Jr, Jihyun Kim 2011 Journal of Crystal Growth 326 62
[13]	Hong-Yeol Kim, Fan Ren, Pearton S J, Jihyun Kim 2009 Electrochemical and Solid-State Letters 12 173
[14]	Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲, 冯倩, 马晓华, 郝跃 2009 58 1161]
[15]	Khanna S M, Diego Estan, Erhardt L S, Alain Houdayer, Cosmo Carlone, Ionascut-Nedelcescu A, Messenger S R, Walters R J, Summers G P, Warner J H, Insoo Jun 2004 IEEE Trans. Nucl. Sci. 51 2729
[16]	Khanna S M, Webb J, Tang H, Haudayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322
[17]	Look D C, Reynolds D C, Hemsky J W, Sizelove J R, Jones R L, Molnar R J 1997 Phys. Rev. Lett. 79 2273
[18]	Koike J, Parkin D M, Mitchell T E 1992 Appl. Phys. Lett. 60 1450
[19]	Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Hu G X 2008 Chin. Phys.Lett. 25 1045
[20]	Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta Phys. Sin. 59 1258 (in Chinese) [金豫浙, 胡益培, 曾祥华, 杨义军 2010 59 1258]
[21]	Shmidt N M, Davydov D V, Emtsev V V, Krestnikov I L, Lebedev A A, Lundin W V, Poloskin D S, Sakharov A V, Usikov A S, Osinsky A V 1999 Phys. Stat. Sol. (b) 216 533
[22]	Feng F F, Liu J L, Qiu C, Wang G X and Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞, 刘军林, 邱冲, 王光绪, 江风益 2010 59 5706]
[23]	Wang G X, Tao X X, Xiong C B, Liu J L, Feng F F, Zhang M, Jiang F Y 2011 Acta Phys. Sin. 60 078503 (in Chinese) [王光绪, 陶喜霞, 熊传兵, 刘军林, 封飞飞, 张萌, 江风益 2011 60 078503]
[24]	Wang X Y, Chong M, Zhao D G, Su Y M 2012 Acta Phys. Sin. 61 217302 (in Chinese) [王晓勇, 种明, 赵德刚, 苏艳梅 2012 61 217302]
[25]	Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 57 2445]
[26]	Charles Joseph Collins 2002 Ph. D. Dissertation ( Austin: University of Texas)
[27]	Fan L, Zhang J C, Li P X, Hao Y 2003 Chin. J. Semiconduct. 24 937 (in Chinese) [范隆, 张进城, 李培咸, 郝跃 2003 半导体学报 24 937]
[28]	Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L, Mishra U K 2003 IEEE Transactions on Electronics Devices 50 2326
[29]	Belyaev A E, Boltovets N S, Ivanov V N, Kapitanchuk L M, Konakova R V, Kudryk Ya Ya, Lytvyn O S, Milenin V V, Sheremet V N, Sveshnikov Y N 2009 Semiconductor Structures, Interfaces And Surfaces 43 904
[30]	Cheng C J, Si J J, Lu Z X,Zhao H Y, Zhao L, Ding J X, Sun W G, Chen Z Z, Zhang G Y 2006 Infrared 27 20 (in Chinese) [成彩晶, 司俊杰, 鲁正雄, 赵鸿燕, 赵岚, 丁嘉欣, 孙维国, 陈志忠, 张国义 2006 红外 27 20]
[31]	Shah J M, Li Y L, Gessmann Th, Schubert E F 2003 J. Appl. Phys. 94 2627
[32]	Rhoderick E H, Williams R H 1988 Metal Semiconductor Conta cts (2nd Edn.) (Oxford: Oxford University Press) p129

施引文献

[1]	Long J P, Varadaraajan S, Matthews J, Schetzina J F 2002 Opto-Electronics Review 10 251
[2]	Kolb C E, Ryali S B, Wormhoudt J C 1988 Proc. SPIE 0932 2
[3]	Yan T J, Chong M, Zhao D G, Zhang S, Chen L H 2011 Inrared and Laser Engineering 40 32 (in Chinese) [颜廷静, 种明, 赵德刚, 张爽, 陈良惠 2011 红外与激光工程 40 32]
[4]	Zhang L Q, Zhang C H, Yang Y T, Yao C F, Li B S, Sun Y M and Song S J 2009 Chin. Phys. Lett. 26 036101
[5]	Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (Beijing: National Defence Industry Press) p20 (in Chinese) [Claeys C, Simoen E著, 刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京: 国防工业出版社) 第20页]
[6]	Lv L, Zhang J C, Li L, Ma X H, Cao Y R and Hao Y 2012 Acta Phys. Sin. 61 057202 (in Chinese) [吕玲, 张进成, 李亮, 马晓华, 曹艳荣, 郝跃 2012 61 057202]
[7]	Ohyama H, Takakura K, Hanada M, Nagano T, Yoshino K, Nakashima T, Kuboyama S, Simoen E, Claeys C 2010 Materials Science and Engineering B 173 57
[8]	Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I 2004 Solid-State Electronics 48 471
[9]	Fan L, Hao Y, Zhao Y F, Zhang J C, Gao Z Y, Li P X 2009 Chin. Phys. B 18 2912
[10]	Hu X, Choi B K, Barnaby H J, Fleetwood D M, Schrimpf R D, Lee S, Shojah-Ardalan S, Wilkins R, Mishra U M, Dettmer R W 2004 IEEE Trans. Nucl. Sci. 51 293
[11]	Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, Cantin J L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733
[12]	Hong-Yeol Kim, Travis Anderson, Michael A. Mastro, Jaime A. Freitas Jr, Soohwan Jang, Jennifer Hite, Charles R. Eddy Jr, Jihyun Kim 2011 Journal of Crystal Growth 326 62
[13]	Hong-Yeol Kim, Fan Ren, Pearton S J, Jihyun Kim 2009 Electrochemical and Solid-State Letters 12 173
[14]	Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲, 冯倩, 马晓华, 郝跃 2009 58 1161]
[15]	Khanna S M, Diego Estan, Erhardt L S, Alain Houdayer, Cosmo Carlone, Ionascut-Nedelcescu A, Messenger S R, Walters R J, Summers G P, Warner J H, Insoo Jun 2004 IEEE Trans. Nucl. Sci. 51 2729
[16]	Khanna S M, Webb J, Tang H, Haudayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322
[17]	Look D C, Reynolds D C, Hemsky J W, Sizelove J R, Jones R L, Molnar R J 1997 Phys. Rev. Lett. 79 2273
[18]	Koike J, Parkin D M, Mitchell T E 1992 Appl. Phys. Lett. 60 1450
[19]	Zhang M L, Wang X L, Xiao H L, Wang C M, Ran J X, Hu G X 2008 Chin. Phys.Lett. 25 1045
[20]	Jin Y Z, Hu Y P, Zeng X H, Yang Y J 2010 Acta Phys. Sin. 59 1258 (in Chinese) [金豫浙, 胡益培, 曾祥华, 杨义军 2010 59 1258]
[21]	Shmidt N M, Davydov D V, Emtsev V V, Krestnikov I L, Lebedev A A, Lundin W V, Poloskin D S, Sakharov A V, Usikov A S, Osinsky A V 1999 Phys. Stat. Sol. (b) 216 533
[22]	Feng F F, Liu J L, Qiu C, Wang G X and Jiang F Y 2010 Acta Phys. Sin. 59 5706 (in Chinese) [封飞飞, 刘军林, 邱冲, 王光绪, 江风益 2010 59 5706]
[23]	Wang G X, Tao X X, Xiong C B, Liu J L, Feng F F, Zhang M, Jiang F Y 2011 Acta Phys. Sin. 60 078503 (in Chinese) [王光绪, 陶喜霞, 熊传兵, 刘军林, 封飞飞, 张萌, 江风益 2011 60 078503]
[24]	Wang X Y, Chong M, Zhao D G, Su Y M 2012 Acta Phys. Sin. 61 217302 (in Chinese) [王晓勇, 种明, 赵德刚, 苏艳梅 2012 61 217302]
[25]	Ding Z B, Wang K, Chen T X, Chen D, Yao S D 2008 Acta Phys. Sin. 57 2445 (in Chinese) [丁志博, 王坤, 陈田祥, 陈迪, 姚淑德 2008 57 2445]
[26]	Charles Joseph Collins 2002 Ph. D. Dissertation ( Austin: University of Texas)
[27]	Fan L, Zhang J C, Li P X, Hao Y 2003 Chin. J. Semiconduct. 24 937 (in Chinese) [范隆, 张进城, 李培咸, 郝跃 2003 半导体学报 24 937]
[28]	Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L, Mishra U K 2003 IEEE Transactions on Electronics Devices 50 2326
[29]	Belyaev A E, Boltovets N S, Ivanov V N, Kapitanchuk L M, Konakova R V, Kudryk Ya Ya, Lytvyn O S, Milenin V V, Sheremet V N, Sveshnikov Y N 2009 Semiconductor Structures, Interfaces And Surfaces 43 904
[30]	Cheng C J, Si J J, Lu Z X,Zhao H Y, Zhao L, Ding J X, Sun W G, Chen Z Z, Zhang G Y 2006 Infrared 27 20 (in Chinese) [成彩晶, 司俊杰, 鲁正雄, 赵鸿燕, 赵岚, 丁嘉欣, 孙维国, 陈志忠, 张国义 2006 红外 27 20]
[31]	Shah J M, Li Y L, Gessmann Th, Schubert E F 2003 J. Appl. Phys. 94 2627
[32]	Rhoderick E H, Williams R H 1988 Metal Semiconductor Conta cts (2nd Edn.) (Oxford: Oxford University Press) p129

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