Si(110)和Si(111)衬底上制备InGaN/GaN蓝光发光二极管

刘战辉; 张李骊; 李庆芳; 张荣; 修向前; 谢自力; 单云

doi:10.7498/aps.63.207304

摘要

分别在Si（110）和Si（111）衬底上制备了InGaN/GaN多量子阱结构蓝光发光二极管（LED）器件. 利用高分辨X射线衍射、原子力显微镜、室温拉曼光谱和变温光致发光谱对生长的LED结构进行了结构表征. 结果表明，相对于Si（111）上生长LED样品，Si（110）上生长的LED结构晶体质量较好，样品中存在较小的张应力，具有较高的内量子效率. 对制备的LED芯片进行光电特性分析测试表明，两种衬底上制备的LED芯片等效串联电阻相差不大，在大电流注入下内量子效率下降较小；但是，相比于Si（111）上制备LED 芯片，Si（110）上LED芯片具有较小的开启电压和更优异的发光特性. 对LED器件电致发光（EL）发光峰随驱动电流的变化研究发现，由于Si（110）衬底上LED结构中阱层和垒层存在较小的应力/应变而在器件中产生较弱的量子限制斯塔克效应，致使Si（110）上LED 芯片EL 发光峰随驱动电流的蓝移量更小.

关键词:

Abstract

In this paper, InGaN/GaN multiple quantum-well blue light emitting diodes (LEDs) are successfully grown on Si(110) and Si(111) substrates. The micro-structural properties of the LEDs are characterized by means of high-resolution X-ray diffraction, atomic force microscopy, Raman spectra, and temperature dependent photoluminescence measurements. The results show that the sample on Si(110) substrate exhibits the high crystal quality, weak tensile strain, and large internal quantum efficiency. The optoelectronic properties of the LED devices are also investigated. The I-V curves indicate that the LED devices fabricated on Si(110) and Si(111) substrates have similar series resistances and low reverse leakage currents, but the LED devices fabricated on Si(110) substrate possess lower turn-on voltages. The relationship between light output intensity and injection current suggests that the LED device fabricated on Si(110) substrate has a strong light output efficiency. The study on the variation of spectral peak energy with injection current of the LED device reveals that LED device on Si(110) substrate presents a smaller spectral shift range when increasing the injection current. And the smaller spectral shift range reflects the weak quantum-confined Stark effect in the device, which can be attributed to the high crystal quality and weak strain between well layer and barrier film in the LED sample grown on Si(110).

Keywords:

作者及机构信息

1.
南京信息工程大学物理与光电工程学院, 南京 210044;

2.
南京大学电子科学与工程学院, 江苏省光电信息功能材料重点实验室, 南京 210093;

3.
南京晓庄学院生物化工与环境工程学院, 南京 211171

基金项目: 国家自然科学基金青年科学基金（批准号：21203098，2013g130）和南京信息工程大学校科研启动基金（批准号：2013x023）资助的课题.

Authors and contacts

1.
School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;

2.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;

3.
School of Biochemical and Environmental Engineering, Nanjing Xiaozhuang College, Nanjing 211171, China

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 21203098, 2013g130) and the Scientific Research Staring Foundation of Nanjing University of Information Science and Technology, China (Grant No. 2013x023).

参考文献

[1]	Crawford M H 2009 IEEE J. Sel. Topics Quantum Electron. 15 1028
[2]	Chen W C, Tang H L, Luo P, Ma W W, Xu X D, Qian X B, Jiang D P, Wu F, Wang J Y, Xu J 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐惠丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军 2014 63 068103]
[3]	Fenwick W E, Andrew M, Xu T M, Li N, Summers C, Jamil M, Ferguson I T 2009 Appl. Phys. Lett. 94 222105
[4]	Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[5]	Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[6]	Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[7]	Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status Solidi A 188 523
[8]	Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[9]	Liu M L, Min Q S, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋实, 叶志清 2012 61 178503]
[10]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C N, Liu H C 2007 J. Lumin. 122–123 185
[11]	Shen X Q, Takahashi T, Kawashima H, Ide T, Shimizu M, Okumura H 2013 Jpn. J. Appl. Phys. 52 08JB05
[12]	Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New J. Phys. 9 389
[13]	Damilano B, Natali F, Brault J, Huault T, Lefebvre D, Tauk R, Frayssinet E, Moreno J C, Cordier Y, Semond F, Chenot S, Massies J 2008 Appl. Phys. Express 1 121101
[14]	Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin. Phys. B 20 116801
[15]	Yang W, He Y F, Liu L, Hu X D 2013 Appl. Phys. Lett. 102 241111
[16]	Yin H X, Zhu C R, Shen Y, Yang H F, Liu Z, Gu C Z, Liu B L, Xu X G 2014 Appl. Phys. Lett. 104 061113
[17]	Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[18]	Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502
[19]	Li S Q, Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S, Zhang J 2011 Acta Phys. Sin. 60 098107 (in Chinese) [李水清, 汪莱, 韩彦军, 罗毅, 邓和清, 丘建生, 张洁 2011 60 098107]
[20]	Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S, Humphreys C J 2003 J. Appl. Phys. 94 1565
[21]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899
[22]	Watanabe A, Takeuchi T, Hirosawa K, Amano H, Hiramatsu K, Akasaki I 1993 J. Cryst. Growth 128 391
[23]	Takeuchi T, Sota S, Sakai H, Amanoa H, Akasaki I, Kaneko K, Nakagawa S, Yamaoka Y, Yamada N 1998 J. Cryst. Growth 189-190 616
[24]	Zhuang R R, Cai P 2013 J. Zhangzhou Normal Univ.(Nat. Sci.) 3 66(in Chinese) [庄榕榕, 蔡平 2013 漳州师范学院学报(自然科学版) 3 66]
[25]	Kalliakos S, Lefebvre P, Taliercio T 2003 Phys. Rev. B 67 205307

施引文献

[1]	Crawford M H 2009 IEEE J. Sel. Topics Quantum Electron. 15 1028
[2]	Chen W C, Tang H L, Luo P, Ma W W, Xu X D, Qian X B, Jiang D P, Wu F, Wang J Y, Xu J 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐惠丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军 2014 63 068103]
[3]	Fenwick W E, Andrew M, Xu T M, Li N, Summers C, Jamil M, Ferguson I T 2009 Appl. Phys. Lett. 94 222105
[4]	Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[5]	Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[6]	Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[7]	Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status Solidi A 188 523
[8]	Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[9]	Liu M L, Min Q S, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋实, 叶志清 2012 61 178503]
[10]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C N, Liu H C 2007 J. Lumin. 122–123 185
[11]	Shen X Q, Takahashi T, Kawashima H, Ide T, Shimizu M, Okumura H 2013 Jpn. J. Appl. Phys. 52 08JB05
[12]	Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New J. Phys. 9 389
[13]	Damilano B, Natali F, Brault J, Huault T, Lefebvre D, Tauk R, Frayssinet E, Moreno J C, Cordier Y, Semond F, Chenot S, Massies J 2008 Appl. Phys. Express 1 121101
[14]	Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin. Phys. B 20 116801
[15]	Yang W, He Y F, Liu L, Hu X D 2013 Appl. Phys. Lett. 102 241111
[16]	Yin H X, Zhu C R, Shen Y, Yang H F, Liu Z, Gu C Z, Liu B L, Xu X G 2014 Appl. Phys. Lett. 104 061113
[17]	Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[18]	Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502
[19]	Li S Q, Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S, Zhang J 2011 Acta Phys. Sin. 60 098107 (in Chinese) [李水清, 汪莱, 韩彦军, 罗毅, 邓和清, 丘建生, 张洁 2011 60 098107]
[20]	Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S, Humphreys C J 2003 J. Appl. Phys. 94 1565
[21]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899
[22]	Watanabe A, Takeuchi T, Hirosawa K, Amano H, Hiramatsu K, Akasaki I 1993 J. Cryst. Growth 128 391
[23]	Takeuchi T, Sota S, Sakai H, Amanoa H, Akasaki I, Kaneko K, Nakagawa S, Yamaoka Y, Yamada N 1998 J. Cryst. Growth 189-190 616
[24]	Zhuang R R, Cai P 2013 J. Zhangzhou Normal Univ.(Nat. Sci.) 3 66(in Chinese) [庄榕榕, 蔡平 2013 漳州师范学院学报(自然科学版) 3 66]
[25]	Kalliakos S, Lefebvre P, Taliercio T 2003 Phys. Rev. B 67 205307

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