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2017, 66(15): 158501.
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2017, 66(4): 047801.
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2015, 64(17): 177804.
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2015, 64(18): 187801.
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2015, 64(10): 107801.
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Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang. The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica,
2012, 61(16): 167104.
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
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2011, 60(7): 078503.
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
2010, 59(2): 1233-1236.
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Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica,
2009, 58(5): 3468-3473.
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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