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Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica,
2014, 63(13): 136803.
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2013, 62(3): 037703.
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2011, 60(6): 066101.
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2011, 60(10): 108501.
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Qin Xi-Feng, Wang Feng-Xiang, Liang Yi, Fu Gang, Zhao You-Mei. Investigation of the lateral spread of Er ions implanted in 6H-SiC. Acta Physica Sinica,
2010, 59(9): 6390-6393.
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2010, 59(7): 4831-4836.
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Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica,
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica,
2008, 57(8): 5165-5169.
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica,
2007, 56(8): 4930-4935.
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Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min. Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica,
2006, 55(10): 5487-5493.
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2002, 51(3): 629-634.
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2002, 51(3): 659-662.
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