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The Sb-doped ZnO film/n-Si heterojunction is synthesized by simple chemical vapor deposition method. The quality of crystal and surface morphology of Sb-doped ZnO film are improved after annealing at 800 ℃, which exhibits effective p-type conductivity with a hole concentration of 9.56× 1017 cm-3. The properties of the p-ZnO/n-Si heterojunction photoelectric device are investigated. The resuets show that this device has good rectifier characteristics with a positive open electric of 4.0 V, and a reverse breakdown voltage of 9.5 V. The electroluminescent is realized at room temperature under the condition of forward current 45 mA. These results also confirm that the high-quality ZnO film can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to ZnO based opto-electronic device.
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Keywords:
- CVD /
- p-ZnO /
- heterojunction /
- electroluminescence
[1] Look D C 2001 Mater. Sci. Eng. B 80 383
[2] Liu H X, Zhou S M, Li S Z, Hang Y, Xu J, Gu S L, Zhang R 2006 Acta Phys. Sin. 55 1398 (in Chinese) [刘红霞, 周圣明, 李抒智, 杭寅, 徐军, 顾书林, 张荣 2006 55 1398]
[3] Hu X Y, Tian H W, Song L J, Zhu P W, Qiao L 2012 Acta Phys. Sin. 61 047102 (in Chinese) [胡小颖, 田宏伟, 宋立军, 朱品文, 乔靓 2012 61 047102]
[4] Kang H S, Kim G H, Kim D L, Chang H W, Ahn B D, Lee S Y 2006 Appl. Phys. Lett. 89 181103
[5] Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S 2006 Appl. Phys. Lett. 88 241108
[6] Liang H W, Feng Q J, Sun J C, Zhao J Z, Bian J M, Hu L Z, Zhang H Q, Luo Y M, Du G T 2008 Semicond. Sci. Technol. 23 025014
[7] Zhao J Z, Liang H W, Sun J C, Bian J M, Feng Q J, Hu L Z, Zhang H Q, Liang X P, Luo Y M, Du G T 2008 J. Phys. D: Appl. Phys. 41 195110
[8] Su S C, Lu Y M, Mei T 2011 Acta Phys. Sin. 60 096801 (in Chinese) [宿世臣, 吕有明, 梅霆 2011 60 096801]
[9] Fan X M, Lian J S, Guo Z X, Lu H J 2005 Appl. Surf. Sci. 239 176
[10] Shantheyanda B P, Todi V O, Sundaram K B, Vijayakumar A, Oladeji I 2011 J. Vac. Sci. Technol. A 29 051514
[11] Gupta V, Mansingh A 1996 J. Appl. Phys. 80 1063
[12] Zhao J Z, Liang H W, Sun J C, Feng Q J, Li S S, Bian J M, Hu L Z, Du G T, Ren J J, Liu Y L 2011 Phys. Stat. Sol. (a) 208 825
[13] Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L, Beyermann W P 2005 Appl. Phys. Lett. 87 152101
[14] Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[15] Hwang D K, Kim H S, Lim J H, Oh J Y, Yang J H, Park S J, Kim K K, Look D C, Park Y S 2005 Appl. Phys. Lett. 86 151917
[16] Ahn C H, Kim Y Y, Kang S W, Cho H K 2007 Phys. B 401 370
[17] Ryu Y R, Lee T S, White H W 2003 Appl. Phys. Lett. 83 87
[18] Shan F K, Liu G X, Lee W J, Shin B C 2007 J. Appl. Phys. 101 053106
[19] Li Y Y, Li Y X, Wu Y L, Sun W L 2007 J. Luminescence 126 177
[20] Tao P C, Feng Q J, Jiang J Y, Zhao H F, Xu R Z, Liu S, Li M K, Sun J C, Song Z 2012 Chem. Phys. Lett. 522 92
[21] Tsukazaki A, Kubota M, Ohtomo A, Onuma T, Ohtan i K, Ohno H, Chichibu S, Kawasaki M 2005 Jpn. J. Appl. Phys. 44 643
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[1] Look D C 2001 Mater. Sci. Eng. B 80 383
[2] Liu H X, Zhou S M, Li S Z, Hang Y, Xu J, Gu S L, Zhang R 2006 Acta Phys. Sin. 55 1398 (in Chinese) [刘红霞, 周圣明, 李抒智, 杭寅, 徐军, 顾书林, 张荣 2006 55 1398]
[3] Hu X Y, Tian H W, Song L J, Zhu P W, Qiao L 2012 Acta Phys. Sin. 61 047102 (in Chinese) [胡小颖, 田宏伟, 宋立军, 朱品文, 乔靓 2012 61 047102]
[4] Kang H S, Kim G H, Kim D L, Chang H W, Ahn B D, Lee S Y 2006 Appl. Phys. Lett. 89 181103
[5] Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S 2006 Appl. Phys. Lett. 88 241108
[6] Liang H W, Feng Q J, Sun J C, Zhao J Z, Bian J M, Hu L Z, Zhang H Q, Luo Y M, Du G T 2008 Semicond. Sci. Technol. 23 025014
[7] Zhao J Z, Liang H W, Sun J C, Bian J M, Feng Q J, Hu L Z, Zhang H Q, Liang X P, Luo Y M, Du G T 2008 J. Phys. D: Appl. Phys. 41 195110
[8] Su S C, Lu Y M, Mei T 2011 Acta Phys. Sin. 60 096801 (in Chinese) [宿世臣, 吕有明, 梅霆 2011 60 096801]
[9] Fan X M, Lian J S, Guo Z X, Lu H J 2005 Appl. Surf. Sci. 239 176
[10] Shantheyanda B P, Todi V O, Sundaram K B, Vijayakumar A, Oladeji I 2011 J. Vac. Sci. Technol. A 29 051514
[11] Gupta V, Mansingh A 1996 J. Appl. Phys. 80 1063
[12] Zhao J Z, Liang H W, Sun J C, Feng Q J, Li S S, Bian J M, Hu L Z, Du G T, Ren J J, Liu Y L 2011 Phys. Stat. Sol. (a) 208 825
[13] Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liu J L, Beyermann W P 2005 Appl. Phys. Lett. 87 152101
[14] Feng Q J, Hu L Z, Liang H W, Feng Y, Wang J, Sun J C, Zhao J Z, Li M K, Dong L 2010 Appl. Surf. Sci. 257 1084
[15] Hwang D K, Kim H S, Lim J H, Oh J Y, Yang J H, Park S J, Kim K K, Look D C, Park Y S 2005 Appl. Phys. Lett. 86 151917
[16] Ahn C H, Kim Y Y, Kang S W, Cho H K 2007 Phys. B 401 370
[17] Ryu Y R, Lee T S, White H W 2003 Appl. Phys. Lett. 83 87
[18] Shan F K, Liu G X, Lee W J, Shin B C 2007 J. Appl. Phys. 101 053106
[19] Li Y Y, Li Y X, Wu Y L, Sun W L 2007 J. Luminescence 126 177
[20] Tao P C, Feng Q J, Jiang J Y, Zhao H F, Xu R Z, Liu S, Li M K, Sun J C, Song Z 2012 Chem. Phys. Lett. 522 92
[21] Tsukazaki A, Kubota M, Ohtomo A, Onuma T, Ohtan i K, Ohno H, Chichibu S, Kawasaki M 2005 Jpn. J. Appl. Phys. 44 643
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