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用来制作光电子器件的(Al0.1Ga0.9)0.5In0.5P为直 接带隙的四元合金材料, 对应的发光波长为630 nm, 在其LP-MOCVD (low press-metalorganic chemical vapor deposition)外延生长过程中温度的高低成为影响其质量的关键, 找到合适的生长温度窗口很有必要. 实验中分别在700 ℃, 680 ℃, 670 ℃和660 ℃的条件下生长出作为发光二极管 有源区的(Al0.1Ga0.9)0.5In0.5P多量子阱结构, 通过PL谱的测试对比分析, 找出最佳生长温度在670 ℃附近. 之后对比各外延片的PL谱、表面形貌, 并对反应室的气流场进行了模拟, 对各温度下生长状况的原因作出了深入分析. 分析得到,高温下In组分的再蒸发会引起晶格失配并导致位错; 低温下O杂质的并入会形成大量非辐射复合中心影响晶体质量, 因此导致了(Al0.1Ga0.9)0.5In0.5P生长温度窗口较窄, 文章最后提出In源有效浓度的提高是解决高温生长的一条有效途径.The (Al0.1Ga0.9)0.5In0.5P, four-element alloy, whose band is direct, is used to make optoelectronic devices. The wavelength of the material is about 630nm. When it is epitaxially grown by low press-metalorganic chemical vapor deposition(LP-MOCVD), its quality will depend on temperature, one of the most important conditions. So it is essential to find out the best temperature of growth. The quantum wells of the (Al0.1Ga0.9)0.5In0.5P are grown at 700 ℃, 680 ℃, 670 ℃ and 660 ℃ respectively. The best temperature, which is found out by the results of photoluminescence PL, is about 670 ℃. The reasons are given by the results of PL, surfaces of wafers and the flow field simulation of MOCVD. The revaporization of In at high temperature and the incorporation of O at low temperature can lead to bad quality. An available path to solve growth at high temperature is to increase the effective density of In.
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Keywords:
- AlGaInP /
- temperature /
- MOCVD
[1] Streubel K, Linder N, Wirth R, Jaeger A 2002 Selected Topics in Quantum Elect ron 8 321
[2] Kawata S, K0bayashi K, Gomyo A, Hino I, Suzuki T 1986 Electronics Letters 22 1265
[3] Soubervielle-Montalvo C, Vital-Ochoa O, de Anda F, Vazquez-Cortes D, Rodriguez A G, Melendez-Lira M, Mendez-Garcia V H 2011Thin Solid Films 520 53
[4] Lee Y J, Lee C J, Chen 2010 Journal of Quantum Electronics 46 1450
[5] Kondo M, Okada N, Domen K, Sugiura K, Anayama C, Tanahashi T 1994 J. Elec. Mat. 23 355
[6] Yu B, Li J J, Gai H X, Niu N H, Xing Y H, Deng J, Han J, Lian P, Shen G D 2005 Laser & Infrared 2005 181 (in Chinese) [俞波, 李建军, 盖红星, 牛南辉, 邢艳辉, 邓军, 韩军, 廉鹏, 沈光地 2005 激光与红外 2005 181]
[7] Jungthawan S, Kim K, Limpijumnong S 2010 Computational Materials Science 491 114
[8] Jou M J, Lin J F, Chang C M, Lin C H, Wu M C, Lee B J 1993 Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 32 4460
[9] Susaki W, Kakuda S, Inada T, Igawa T, Tomioka A 2009 Physica Status Solidi C: Current Topics in Solid State Physics 6 1517
[10] Soubervielle-Montalvo C, Vital-Ochoa O De Anda 2011 Thin Solid Films 520 53
[11] Dong J R, Chua S J, Wang Y J, Yuan H R 2004 Journal of Crystal Growth 269 408
[12] Zorn M, Trepk T, Schenk T, Zettler J T, Weyers M 2007 Journal of Crystal Growth 298(SI) 23
[13] Lin T, Zheng K, Wang C L, Ma X Y 2007 Journal of Crystal Growth 309 140
[14] Nishikawa Y, Suzuki M, Ishikawa M, Kokubun Y, Hatakoshi G 1992 Journal of Crystal Growth 123 181
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[1] Streubel K, Linder N, Wirth R, Jaeger A 2002 Selected Topics in Quantum Elect ron 8 321
[2] Kawata S, K0bayashi K, Gomyo A, Hino I, Suzuki T 1986 Electronics Letters 22 1265
[3] Soubervielle-Montalvo C, Vital-Ochoa O, de Anda F, Vazquez-Cortes D, Rodriguez A G, Melendez-Lira M, Mendez-Garcia V H 2011Thin Solid Films 520 53
[4] Lee Y J, Lee C J, Chen 2010 Journal of Quantum Electronics 46 1450
[5] Kondo M, Okada N, Domen K, Sugiura K, Anayama C, Tanahashi T 1994 J. Elec. Mat. 23 355
[6] Yu B, Li J J, Gai H X, Niu N H, Xing Y H, Deng J, Han J, Lian P, Shen G D 2005 Laser & Infrared 2005 181 (in Chinese) [俞波, 李建军, 盖红星, 牛南辉, 邢艳辉, 邓军, 韩军, 廉鹏, 沈光地 2005 激光与红外 2005 181]
[7] Jungthawan S, Kim K, Limpijumnong S 2010 Computational Materials Science 491 114
[8] Jou M J, Lin J F, Chang C M, Lin C H, Wu M C, Lee B J 1993 Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 32 4460
[9] Susaki W, Kakuda S, Inada T, Igawa T, Tomioka A 2009 Physica Status Solidi C: Current Topics in Solid State Physics 6 1517
[10] Soubervielle-Montalvo C, Vital-Ochoa O De Anda 2011 Thin Solid Films 520 53
[11] Dong J R, Chua S J, Wang Y J, Yuan H R 2004 Journal of Crystal Growth 269 408
[12] Zorn M, Trepk T, Schenk T, Zettler J T, Weyers M 2007 Journal of Crystal Growth 298(SI) 23
[13] Lin T, Zheng K, Wang C L, Ma X Y 2007 Journal of Crystal Growth 309 140
[14] Nishikawa Y, Suzuki M, Ishikawa M, Kokubun Y, Hatakoshi G 1992 Journal of Crystal Growth 123 181
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