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Zhang Hong-Wei, Cai Ren-Hao, Li Ji-Ning, Zhong Kai, Wang Yu-Ye, Xu De-Gang, Yao Jian-Quan. Metasurfaces based terahertz and mid- and long-wave infrared high-efficiency beam splitting devices. Acta Physica Sinica,
2024, 73(19): 197801.
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. 3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica,
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Xu Ting, Wang Zi-Shuai, Li Xuan-Hua, Sha Wei E. I.. Loss mechanism analyses of perovskite solar cells with equivalent circuit model. Acta Physica Sinica,
2021, 70(9): 098801.
doi: 10.7498/aps.70.20201975
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Li Yu-Han, Deng Lian-Wen, Luo Heng, He Long-Hui, He Jun, Xu Yun-Chao, Huang Sheng-Xiang. Equivalent circuit model and microwave reflection loss mechanism of double-layer spiral-ring metasurface embedded composite microwave absorber. Acta Physica Sinica,
2019, 68(9): 095201.
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Lou Guo-Feng, Yu Xin-Jie, Lu Shi-Hua. Equivalent circuit model for plate-type magnetoelectric laminate composite considering an interface coupling factor. Acta Physica Sinica,
2018, 67(2): 027501.
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Jiang Yan-Nan, Wang Yang, Ge De-Biao, Li Si-Min, Cao Wei-Ping, Gao Xi, Yu Xin-Hua. An ultra-wideband absorber based on graphene. Acta Physica Sinica,
2016, 65(5): 054101.
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Wang Yan, Yang Jiu, Wang Li-Dan, Duan Shu-Kai. Research of coupling behavior based on series-parallel flux-controlled memristor. Acta Physica Sinica,
2015, 64(23): 237303.
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Liu Jing, Wu Yu, Gao Yong. Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica,
2014, 63(14): 148503.
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Hu Feng-Wei, Bao Bo-Cheng, Wu Hua-Gan, Wang Chun-Li. Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics. Acta Physica Sinica,
2013, 62(21): 218401.
doi: 10.7498/aps.62.218401
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Liang Yan, Yu Dong-Sheng, Chen Hao. A novel meminductor emulator based on analog circuits. Acta Physica Sinica,
2013, 62(15): 158501.
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Bai Chun-Jiang, Li Jian-Qing, Hu Yu-Lu, Yang Zhong-Hai, Li Bin. Calculation of beam-wave interaction of coupled-cavity TWT using equivalent circuit model. Acta Physica Sinica,
2012, 61(17): 178401.
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Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2012, 61(23): 238502.
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Guo Fan, Li Yong-Dong, Wang Hong-Guang, Liu Chun-Liang, Hu Yi-Xiang, Zhang Peng-Fei, Ma Meng. Particle-in-cell simulation of outer magnetically insulated transmission line of Z-pinch accelerator. Acta Physica Sinica,
2011, 60(10): 102901.
doi: 10.7498/aps.60.102901
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica,
2011, 60(1): 017303.
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2011, 60(4): 044402.
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong. Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica,
2011, 60(11): 118501.
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li. A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica,
2011, 60(7): 078502.
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Pan Hai-Lin, Cheng Jin-Ke, Zhao Zhen-Jie, He Jia-Kang, Ruan Jian-Zhong, Yang Xie-Long, Yuan Wang-Zhi. Study of the LC resonance giant magneto-impedance effect. Acta Physica Sinica,
2008, 57(5): 3230-3236.
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Zhou Tie-Ge, Song Feng-Bin, Zuo Tao, Gu Jing, Xia Hou-Hai, Hu Ya-Ting, Zhao Xin-Jie, Fang Lan, Yan Shao-Lin. The model of capacitively coupled intrinsic Josephson junction array and its chaotic behavior. Acta Physica Sinica,
2007, 56(11): 6307-6314.
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Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin. Junction capacitance models of SiGe HBT. Acta Physica Sinica,
2004, 53(9): 3239-3244.
doi: 10.7498/aps.53.3239
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