基于模拟电路的新型忆感器等效模型

梁燕; 于东升; 陈昊

doi:10.7498/aps.62.158501

摘要

本文首先利用光敏电阻阻值的可控性, 建立了磁通控制型忆阻器的等效电路模型. 通过对忆感器和忆阻器间转换关系的分析, 采用模拟电子元器件设计了磁通控制型忆感器的实用等效电路模型, 给出了理论分析并结合Pspice软件进行了仿真验证. 忆感器等效电路模型的韦安关系展现出典型的非线性磁滞回线特性. 最后, 运用实验手段研究了正弦波和三角波两种典型电压信号激励下忆感器与RC串联后电路的动态特征, 证明了本文提出忆感器等效电路模型的有效性.

关键词:

Abstract

Meminductor, a nonlinear device with memory ability and controllable meminductance, was generalized on the basis of the conception of memristor. Currently, meminductor is still unavailable on the market. Therefore, in order to investigate its properties and potential application, designing electronic emulator is of significant importance. In this paper, a flux-controlled memristive emulator using ligh-dependent resistor (LDR) is proposed and the mutator for transferring memristor into a flux controlled meminductor is described, of which the realization is on the basis of two current conveyor chips and operational amplifiers. Results of Pspice simulation and hardware experiments indicate that the current-flux characteristic of the meminductor is a frequency-dependent pinched loop, like an inclined number “8”. To confirm the effectiveness and correctness, the proposed emulator is analyzed theoretically and tested experimentally as it is connected in an RLMC series circuit. The dynamic behaviors of the RLMC circuit are analyzed and observed. All the results manifest that this newly proposed emulator is capable of simulating a nonlinear meminductor and can be applied to the analog circuit design.

Keywords:

作者及机构信息

1.
中国矿业大学, 信息与电气工程学院, 徐州 221116

基金项目: 中央高校基本科研业务费专项资金 (批准号: 2013QNB28) 资助的课题.

Authors and contacts

1.
The School of Information and Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China

Funds: Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. 2013QNB28).

参考文献

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施引文献

[1]	Chua L O 1971 IEEE Trans. Circ. Th. 18 507
[2]	Chua L O, Kang S M 1976 Proc. IEEE 64 209
[3]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[4]	Wang W, Ma D G, 2010 Chin. Phys. Lett. 27 018503
[5]	Liu Y, Song Z T, Ling Y, Feng S L 2010 Chin. Phys. Lett. 27 038502
[6]	Huang L, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 137701 (in Chinese) [黄力, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 137701]
[7]	Bao B C, Hu X, Xu J P, Liu Z, Zou L 2011 Acta Phys. Sin. 60 120502 (in Chinese) [包伯成, 胡许, 许建平, 刘中, 邹凌 2011 60 120502]
[8]	Bao B C, Liu Z, Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 徐建平 2010 59 3785]
[9]	Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306 (in Chinese) [贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 61 217306]
[10]	Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[11]	Rák A, Cserey G 2010 IEEE Trans. Computer-Aided Design of Integr. Circ. Syst. 29 632
[12]	Batas D, Fiedler H 2011 IEEE Trans. Nano 10 250
[13]	Shin S, Kang S M 2010 IEEE Trans. Computer-Aided Design of Integr. Circ. Syst. 29 590
[14]	Kim H, Sah M P, Yang C, Cho S, Chua L O 2012 IEEE Trans. Circuits Syst. I: Reg. Papers 59 2422
[15]	Pershin Y V, Ventra M D 2010 IEEE Trans. Circ. Syst. I: Reg. Papers 57 1857
[16]	Valsa J, Biolek D, Biolek Z 2010 Int. J. Numer. Model 24 400
[17]	Wang X Y, Fitch A L, Iu H H C, Qi W G 2012 Chin. Phys. B 21 108501
[18]	Biolek D, Biolek Z, Biolkova V 2011 Analog Intergr. Circ. Sig. Process 66 129
[19]	Pershin Y V, Ventra M D 2010 Electron. Lett. 46 517
[20]	Senani R 1982 Electrocomponent Sci. Techn. 10 7

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