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2023, 72(8): 088801.
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2021, 70(12): 128803.
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Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics. Acta Physica Sinica,
2017, 66(19): 197301.
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2015, 64(7): 073101.
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2015, 64(10): 107701.
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2014, 63(12): 128102.
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2013, 62(1): 017802.
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2012, 61(1): 017701.
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2010, 59(3): 1839-1846.
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2010, 59(10): 7239-7244.
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2008, 57(3): 1796-1801.
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2007, 56(11): 6547-6551.
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