High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics

Li Shu-Ping; Zhang Zhi-Li; Fu Kai; Yu Guo-Hao; Cai Yong; Zhang Bao-Shun

doi:10.7498/aps.66.197301

Abstract

Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Keywords:

Authors and contacts

1.
Suzhou Industrial Park Institute of Services Outsourcing, Suzhou 215123, China;
2.
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China}

Corresponding author: Zhang Bao-Shun, Bszhang2006@sinano.ac.cn

Funds: Project supported by the Key Technologies Support Program of Jiangsu Province, China (Grant No. BE2013002-2), The National Key Research and Development Program of China (Grant No. 2016YFC0801203), the Key Research and Development Program of Jiangsu Province, China (Grant No. BE2016084), the National Natural Science Foundation of China (Grant No. 11404372), and the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2013YQ470767).

References

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Cited By

[1]	Yuan S, Duan B X, Yuan X N, Ma J C, Li C L, Cao Z, Guo H J, Yang Y T 2015 Acta Phys. Sin. 64 237302 (in Chinese)[袁嵩, 段宝兴, 袁小宁, 马建冲, 李春来, 曹震, 郭海军, 杨银堂 2015 64 237302]
[2]	Hua M, Liu C, Yang S, Liu S, Fu K, Dong Z, Cai Y, Zhang B, Chen K J 2015 IEEE Electron Dev. Lett. 36 448
[3]	Yang S, Tang Z K, Wong K Y, Lin Y S, Liu C, Lu Y Y, Huang S, Chen K J 2013 IEEE Electron Dev. Lett. 34 1497
[4]	Xin T, Lu Y J, Gu G D, Wang L, Dun S B, Song X B, Guo H Y, Yin J Y, Cai S J, Feng Z H 2015 J. Semicond. 36 074008
[5]	Hsieh T E, Chang E Y, Song Y Z, Lin Y C, Wang H C, Liu S C, Salahuddin S, Hu C C 2014 IEEE Electron Dev. Lett. 35 732
[6]	Choi W, Ryu H, Jeon N, Lee M, Cha H Y, Seo K S 2014 IEEE Electron Dev. Lett. 35 30
[7]	Chakroun A, Maher H, Al Alam E, Souifi A, Aimez V, Ares R, Jaouad A 2014 IEEE Electron Dev. Lett. 35 318
[8]	Liu S C, Chen B Y, Lin Y C, Hsieh T E, Wang H C, Chang E Y 2014 IEEE Electron Dev. Lett. 35 1001
[9]	Zhang Z L, Qin S J, Fu K, Yu G H, Li W Y, Zhang X D, Sun S C, Song L, Li S M, Hao R H, Fan Y M, Sun Q, Pan G B, Cai Y, Zhang B S 2016 Appl. Phys. Express 9 084102
[10]	Zhang Z L, Yu G H, Zhang X D, Deng X G, Li S M, Fan Y M, Sun S C, Song L, Tan S X, Wu D D, Li W Y, Huang W, Fu K, Cai Y, Sun Q, Zhang B S 2016 IEEE Trans. Electron Dev. 63 731
[11]	Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, and Yang L A 2009 Chin. Phys. B 18 3014
[12]	Edwards A P, Mittereder J A, Binari S C, Katzer D S, Storm D F, Roussos J A 2005 IEEE Electron Dev. Lett. 26 225
[13]	Huang S, Jiang Q M, Yang S, Zhou C H, Chen K J 2012 IEEE Electron Dev. Lett. 33 516
[14]	Reiner M, Lagger P, Prechtl G, Steinschifter P, et al. 2015 IEEE International Electron Devices Meeting Washington, Dec. 7-9 2015, p35.5.1
[15]	Liu S, Yu G H, Fu K, Tan S X, Zhang Z L, Zeng C H, Hou K Y, Huang W, Cai Y, Zhang B S, Yuan J S 2014 Electron. Lett. 50 1322
[16]	Kanamura M, Ohki T, Ozaki S, Nishimori M, Tomabechi S, Kotani J, Miyajima T, Nakamura N, Okamoto N, Kikkawa T 2013 Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on Kanazawa, May 26-30, 2013, pp411-414
[17]	Xu Z, Wang J Y, Liu Y, Cai J B, Liu J Q, Wang M J, Yu M, Xie B, Wu W G, Ma X H, Zhang J C 2013 IEEE Electron Dev. Lett. 34 855
[18]	Lanford W B, Tanaka T, Otoki Y, Adesida I 2005 Electron. Lett. 41 449
[19]	Wu T L, Franco J, Marcon D, de Jaeger B, Bakeroot B, Stoffels S, van Hove M, Groeseneken G, Decoutere S 2016 IEEE Trans. Electron Dev. 63 1853
[20]	Huang S, Yang S, Roberts J, Chen K J 2011 Jpn. J. Appl. Phys. 50 0202
[21]	Polyakov A Y, Smirnov N B, Govorkov A V, Markov A V, Dabiran A M, Wowchak A M, Osinsky A V, Cui B, Chow P P, Pearton S J 2007 Appl. Phys. Lett. 91 232116

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Vol. 66, Issue 19 - 2017-10-05

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