| [1] |
Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
doi: 10.7498/aps.69.20200029
|
| [2] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
| [3] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
doi: 10.7498/aps.58.3302
|
| [4] |
Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun. Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica,
2007, 56(3): 1603-1607.
doi: 10.7498/aps.56.1603
|
| [5] |
TANG XUE-FENG, GU MU, TONG HONG-YONG, LIANG LING, YAO MING-ZHEN, CHEN LING-YAN, LIAO JING-YING, SHEN BIN-FU, QU XIANG-DONG, YIN ZHI-WEN, XU WEI-XIN, WANG JING-C HENG. A STUDY ON La-DOPED PbWO4 SCINTILLATING CRYSTAL. Acta Physica Sinica,
2000, 49(10): 2007-2010.
doi: 10.7498/aps.49.2007
|
| [6] |
ZHOU WEI-YA, XIE SI-SHEN, WANG GANG, QIAN SHENG-FA, MAO JIAN-MIN, DING XUE-ZHOU, LI NAN, FU CHUN-SHENG. MORPHOLOGY AND GROWTH DEFECTS OF C60 CRYSTALS. Acta Physica Sinica,
1996, 45(3): 470-479.
doi: 10.7498/aps.45.470
|
| [7] |
Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris. . Acta Physica Sinica,
1995, 44(7): 1101-1107.
doi: 10.7498/aps.44.1101
|
| [8] |
Xu Qiang, Wang Jian-Bao, Yuan Jian, Lu Fang, Sun Heng-Hui. . Acta Physica Sinica,
1995, 44(3): 432-438.
doi: 10.7498/aps.44.432
|
| [9] |
YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING. Acta Physica Sinica,
1994, 43(7): 1137-1143.
doi: 10.7498/aps.43.1137
|
| [10] |
LI MING, MAI ZHEN-HONG, CUI SHU-PAN. CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica,
1994, 43(1): 78-83.
doi: 10.7498/aps.43.78
|
| [11] |
LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica,
1992, 41(6): 985-991.
doi: 10.7498/aps.41.985
|
| [12] |
GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1988, 37(1): 152-156.
doi: 10.7498/aps.37.152
|
| [13] |
Duan Pei Gao Ping Tang Ji-you. A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica,
1987, 36(8): 986-991.
doi: 10.7498/aps.36.986
|
| [14] |
MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN. STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica,
1984, 33(7): 921-926.
doi: 10.7498/aps.33.921
|
| [15] |
HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1984, 33(5): 694-695.
doi: 10.7498/aps.33.694
|
| [16] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
| [17] |
MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI, LIN RU-GAN, ZHANG JIN-FU. OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1983, 32(5): 685-688.
doi: 10.7498/aps.32.685
|
| [18] |
YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica,
1982, 31(3): 278-284.
doi: 10.7498/aps.31.278
|
| [19] |
GUO CHANG-LIN, HUANG YUE-HONG, FAN SHI-JI. A X-RAY STUDY OF IMPERFECTION IN SYNTHETIC FLUOROPHLOGOPITE CRYSTAL. Acta Physica Sinica,
1980, 29(4): 461-468.
doi: 10.7498/aps.29.461
|
| [20] |
JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica,
1980, 29(10): 1283-1292.
doi: 10.7498/aps.29.1283
|
下载:
