| [1] |
Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica,
2020, 69(10): 102901.
doi: 10.7498/aps.69.20200029
|
| [2] |
Li Ming-Yang, Zhang Lei-Min, Lv Shasha, Li Zheng-Cao. Effects of ion irradiation and oxidation on point defects in IG-110 nuclear grade graphite. Acta Physica Sinica,
2019, 68(12): 128102.
doi: 10.7498/aps.68.20190371
|
| [3] |
Cui Li-Juan, Gao Jin, Du Yu-Feng, Zhang Gao-Wei, Zhang Lei, Long Yi, Yang Shan-Wu, Zhan Qian, Wan Fa-Rong. Characterization of dislocation loops in hydrogen-ion irradiated vanadium. Acta Physica Sinica,
2016, 65(6): 066102.
doi: 10.7498/aps.65.066102
|
| [4] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
| [5] |
Peng Shu-Ming, Shen Hua-Hai, Long Xing-Gui, Zhou Xiao-Song, Yang Li, Zu Xiao-Tao. The influence of deuteration and helium-implantation on the surface morphology and phase structure of scandium thick film. Acta Physica Sinica,
2012, 61(17): 176106.
doi: 10.7498/aps.61.176106
|
| [6] |
Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao. Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica,
2012, 61(1): 016105.
doi: 10.7498/aps.61.016105
|
| [7] |
Li Tian-Jing, Li Gong-Ping, Ma Jun-Ping, Gao Xing-Xin. Effect of Co+ implantation on structural and optical properties in single-crystal TiO2. Acta Physica Sinica,
2011, 60(11): 116102.
doi: 10.7498/aps.60.116102
|
| [8] |
Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica,
2009, 58(10): 7108-7113.
doi: 10.7498/aps.58.7108
|
| [9] |
Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long. Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica,
2007, 56(11): 6543-6546.
doi: 10.7498/aps.56.6543
|
| [10] |
Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica,
2006, 55(8): 4353-4357.
doi: 10.7498/aps.55.4353
|
| [11] |
WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING. THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica,
2000, 49(11): 2210-2213.
doi: 10.7498/aps.49.2210
|
| [12] |
YAN HUI, CHEN GUANG-HUA, S.P.WONG, R.W.M.KWOK. CHARACTERISTIC ELECTRON ENERGY LOSS SPECTRA IN SiC BURIED LAYERS FORMED BY C+ IMPLANTATION INTO CRYSTALLINE SILICON. Acta Physica Sinica,
1998, 47(5): 876-880.
doi: 10.7498/aps.47.876
|
| [13] |
TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN. A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica,
1992, 41(5): 809-813.
doi: 10.7498/aps.41.809
|
| [14] |
HUANG YI-SEN, ZHAO QING-LAN. EFFECTS OF STRUCTURE IN RUBIDIUM ACID PHTHALATE (RAP) ON ITS SINGLE CRYSTAL GROWTH HABIT AND DEFECT FORMATION. Acta Physica Sinica,
1991, 40(12): 1960-1965.
doi: 10.7498/aps.40.1960
|
| [15] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
| [16] |
WANG GUANG-HOU. HYDROGEN DISTRIBUTION IN THE ION IMPLANTED SUPERCONDUCTOR PdCu AND ITS TRANSITION TEMPERATURE. Acta Physica Sinica,
1984, 33(10): 1434-1436.
doi: 10.7498/aps.33.1434
|
| [17] |
ZHAO GUANG-LIN. THE INFLUENCE OF IMPLANTED IONS ON THE SUPERCONDUCTING TRANSITION TEMPERATURE. Acta Physica Sinica,
1984, 33(4): 571-574.
doi: 10.7498/aps.33.571
|
| [18] |
MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN. STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica,
1984, 33(7): 921-926.
doi: 10.7498/aps.33.921
|
| [19] |
HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1984, 33(5): 694-695.
doi: 10.7498/aps.33.694
|
| [20] |
JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica,
1980, 29(10): 1283-1292.
doi: 10.7498/aps.29.1283
|
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