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(1)FOM原子和分子物理研究所,1098SJAmsterdam; (2)北京师范大学低能核物理研究所射线束与材料工程开放实验室,北京100875;
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[1] Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901. doi: 10.7498/aps.69.20200029 [2] Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua. Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica, 2014, 63(17): 176101. doi: 10.7498/aps.63.176101 [3] Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica, 2014, 63(13): 136803. doi: 10.7498/aps.63.136803 [4] Wang Chong, Yang Yu, Yang Rui-Dong, Li Liang, Wei Dong, Jin Ying-Xia, Bao Ji-Ming. Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer. Acta Physica Sinica, 2011, 60(10): 106104. doi: 10.7498/aps.60.106104 [5] Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long. Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica, 2007, 56(11): 6543-6546. doi: 10.7498/aps.56.6543 [6] Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357. doi: 10.7498/aps.55.4353 [7] Li Qiang, Jiang Zhi-Jin, Xia Hong-Fu. J/ψ anomalous suppression in high-energy heavy-ion collisions. Acta Physica Sinica, 2006, 55(10): 5161-5165. doi: 10.7498/aps.55.5161 [8] Xie Jing-Yi, Zhou Hong-Yu, Wang Ping, Ding Xiao-Ji, Liu Zhi-Guo, Song Hai, Lu Ting, Zhu Guang-Hua. A study of directional effect of depth-concentration distribution for implanted heavy ions with low energies in dry peanut seeds. Acta Physica Sinica, 2003, 52(10): 2530-2533. doi: 10.7498/aps.52.2530 [9] Liu Xue-Qin, Wang Yin-Yue, Zhen Cong-Mian, Zhang Jing, Yang Ying-Hu, Guo Yong-Ping. . Acta Physica Sinica, 2002, 51(10): 2340-2343. doi: 10.7498/aps.51.2340 [10] WANG PEI-LU, LIU ZHONG-YANG, ZHENG SI-XIAO, LIAO XIAO-DONG, YANG CHAO-WEN, TANG A-YOU, SHI MIAN-GONG, YANG BEI-FANG, MIAO JING-WEI. STUDIES ON THE FEATURE OF Si(111) SURFACE IMPLANTED BY NITROGEN ATOM,MOLECULE AND CLUSTER IONS. Acta Physica Sinica, 2001, 50(5): 860-864. doi: 10.7498/aps.50.860 [11] WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING. THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica, 2000, 49(11): 2210-2213. doi: 10.7498/aps.49.2210 [12] YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN. Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984. doi: 10.7498/aps.47.978 [13] YAN HUI, CHEN GUANG-HUA, S.P.WONG, R.W.M.KWOK. CHARACTERISTIC ELECTRON ENERGY LOSS SPECTRA IN SiC BURIED LAYERS FORMED BY C+ IMPLANTATION INTO CRYSTALLINE SILICON. Acta Physica Sinica, 1998, 47(5): 876-880. doi: 10.7498/aps.47.876 [14] LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG. STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991. doi: 10.7498/aps.41.985 [15] TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN. A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813. doi: 10.7498/aps.41.809 [16] LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE. SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS. Acta Physica Sinica, 1990, 39(2): 254-260. doi: 10.7498/aps.39.254 [17] GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156. doi: 10.7498/aps.37.152 [18] HE XING-FEI, MO DANG. MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRY. Acta Physica Sinica, 1986, 35(12): 1567-1573. doi: 10.7498/aps.35.1567 [19] WANG WEI-YUAN, XIA GUAN-QUN, LU JIAN-GUO, SHAO YONG-FU, QIAO YONG. CARRIER PROFILE TAIL IN SILICON IMPLANTED Cr-DOPED SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1985, 34(3): 402-407. doi: 10.7498/aps.34.402 [20] LI YUAN-HENG. DYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING. Acta Physica Sinica, 1981, 30(4): 542-544. doi: 10.7498/aps.30.542
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Publishing process
- Received Date:
09 May 1994
- Published Online:
20 July 1995
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