| [1] |
Sun Yu-Xin, Wu De-Fan, Zhao Tong, Lan Wu, Yang De-Ren, Ma Xiang-Yang. Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen. Acta Physica Sinica,
2021, 70(9): 098101.
doi: 10.7498/aps.70.20201803
|
| [2] |
Zhang Ni1\2, Liu Ding1\2, Feng Xue-Liang. Effects of process parameters on melt-crystal interface in Czochralski silicon crystal growth. Acta Physica Sinica,
2018, 67(21): 218701.
doi: 10.7498/aps.67.20180305
|
| [3] |
Wu Tai-Quan. Ge-vacancy complexes in Ge-doped czochralski silicon crystal. Acta Physica Sinica,
2012, 61(6): 063101.
doi: 10.7498/aps.61.063101
|
| [4] |
Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao. Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica,
2012, 61(1): 016105.
doi: 10.7498/aps.61.016105
|
| [5] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
| [6] |
Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica,
2007, 56(7): 4113-4116.
doi: 10.7498/aps.56.4113
|
| [7] |
Hao Qiu-Yan, Liu Cai-Chi, Sun Wei-Zhong, Zhang Jian-Qiang, Sun Shi-Long, Zhao Li-Wei, Zhang Jian-Feng, Zhou Qi-Gang, Wang Jing. Effect of high temperature rapid thermal annealing on flow pattern defects in heavily Sb-doped CZSi. Acta Physica Sinica,
2005, 54(10): 4863-4866.
doi: 10.7498/aps.54.4863
|
| [8] |
Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica,
2004, 53(2): 550-554.
doi: 10.7498/aps.53.550
|
| [9] |
LI MING, MAI ZHEN-HONG, CUI SHU-PAN. CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES. Acta Physica Sinica,
1994, 43(1): 78-83.
doi: 10.7498/aps.43.78
|
| [10] |
GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA. THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica,
1988, 37(1): 152-156.
doi: 10.7498/aps.37.152
|
| [11] |
Duan Pei Gao Ping Tang Ji-you. A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL. Acta Physica Sinica,
1987, 36(8): 986-991.
doi: 10.7498/aps.36.986
|
| [12] |
MAI ZHEN-HONG, CUI SHU-FAN, LIN JIAN, Lü YAN. STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica,
1984, 33(7): 921-926.
doi: 10.7498/aps.33.921
|
| [13] |
HE XIAN-CHANG. EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1984, 33(5): 694-695.
doi: 10.7498/aps.33.694
|
| [14] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
| [15] |
YANG CHUAN-ZHENG, ZHU JIAN-SHENG. INVESTIGATION OF THE DEFECTS IN SILICON SINGLE CRYSTALS GROWN BY FLOATING-ZONE METHOD IN THE ATMOSPHERE CONTAINING HYDROGEN. Acta Physica Sinica,
1982, 31(3): 278-284.
doi: 10.7498/aps.31.278
|
| [16] |
MAI ZHEN-HONG, GE PEI-WEN, CU I SHU-FAN, XIAO NAN, WU LAN-SHENG. THE OBSERVATION ON DEFECTS IN YAG SINGLE CRYSTAL BY X-RAY TRANSMISSION TOPOGRAPHY. Acta Physica Sinica,
1981, 30(7): 999-1002.
doi: 10.7498/aps.30.999
|
| [17] |
BA TU, HE YI-ZHEN. MORPHOLOGY OF THE COPPER PRECIPITATES IN SILICON SINGLE CRYSTALS. Acta Physica Sinica,
1980, 29(7): 860-866.
doi: 10.7498/aps.29.860
|
| [18] |
GU YUAN-XIN, GE PEI-WEN, ZHAO YA-QIN, HU BO-QING, WU LAN-SHENG, FU QUAN-GUI. X-RAY TOPOGRAPHICAL STUDY ON DEFECTS IN α-LiIO3 DECORATED BY SPACE CHARGE DUE TO THE APPLIED DC FIELDS. Acta Physica Sinica,
1980, 29(6): 711-717.
doi: 10.7498/aps.29.711
|
| [19] |
JIANG BAI-LIN, SHENG SHI-XIONG, XIAO ZHI-GANG, BAO JIAN-YING. MECHANISM OF THE FORMATION OF THE DEFECTS DURING HEAT TREATMENT IN SINGLE SILICON CRYSTAL GROWN BY FLOATING ZONE METHOD UNDER PURE HYDROGEN. Acta Physica Sinica,
1980, 29(10): 1283-1292.
doi: 10.7498/aps.29.1283
|
| [20] |
CUI SHU-FAN, GE PEI-WEN, ZHAO YA-QIN, WU LAN-SHENG. THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES. Acta Physica Sinica,
1979, 28(6): 791-795.
doi: 10.7498/aps.28.791
|
下载:
