| [1] |
Zhou Ji-Yang, Li Qiang, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can. Theoretical calculation of fiber cavity coupling silicon carbide membrance. Acta Physica Sinica,
2022, 71(6): 060303.
doi: 10.7498/aps.71.20211797
|
| [2] |
Shi Jia-Yu, Lan You-Zhao. First-principles study of stacking effect on second harmonic generation of graphene-like two-dimensional silicon carbide. Acta Physica Sinica,
2018, 67(21): 217803.
doi: 10.7498/aps.67.20181337
|
| [3] |
She Qing, Jiang Mei-Fu, Qian Nong, Pan Yue. Effects of preparation temperature of SiC intermediate layers on the hemocompatibility of SiC/F-DLC composite film. Acta Physica Sinica,
2014, 63(18): 185204.
doi: 10.7498/aps.63.185204
|
| [4] |
Zou Xiao-Cui, Wu Mu-Sheng, Liu Gang, Ouyang Chu-Ying, Xu Bo. First-principles study on the electronic structures of β-SiC/carbon nanotube core-shell structures. Acta Physica Sinica,
2013, 62(10): 107101.
doi: 10.7498/aps.62.107101
|
| [5] |
Gao Shang-Peng, Zhu Tong. Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica,
2012, 61(13): 137103.
doi: 10.7498/aps.61.137103
|
| [6] |
Fang Chao, Liu Ma-Lin. The study of the Raman spectra of SiC layers in TRISO particles. Acta Physica Sinica,
2012, 61(9): 097802.
doi: 10.7498/aps.61.097802
|
| [7] |
Zhou Nai-Gen, Hong Tao, Zhou Lang. A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum. Acta Physica Sinica,
2012, 61(2): 028101.
doi: 10.7498/aps.61.028101
|
| [8] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
2012, 61(17): 177201.
doi: 10.7498/aps.61.177201
|
| [9] |
Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica,
2011, 60(6): 066101.
doi: 10.7498/aps.60.066101
|
| [10] |
Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica,
2009, 58(5): 3302-3308.
doi: 10.7498/aps.58.3302
|
| [11] |
Song Jiu-Xu, Yang Yin-Tang, Liu Hong-Xia, Zhang Zhi-Yong. First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes. Acta Physica Sinica,
2009, 58(7): 4883-4887.
doi: 10.7498/aps.58.4883
|
| [12] |
Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
doi: 10.7498/aps.57.6007
|
| [13] |
Li Yi-De, Du Ying-Lei, Lee Ki-Huan, Wu Bai-Mei. Photoacoustic determination of the energy band characterics for porous silicon carbides. Acta Physica Sinica,
2003, 52(5): 1260-1263.
doi: 10.7498/aps.52.1260
|
| [14] |
Guo Chang-lin. CRYSTAL STRUCTURE OF SEVERAL SiC POLYTYPES BELONGING TO SPECIAL STRUCTURE FAMILY. Acta Physica Sinica,
1982, 31(10): 1369-1379.
doi: 10.7498/aps.31.1369
|
| [15] |
FENG XI-QI, LUO BIN-ZHANG. THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION. Acta Physica Sinica,
1980, 29(1): 1-10.
doi: 10.7498/aps.29.1
|
| [16] |
YUI SHOU-DUNG, WOO DAU-WEI, TON FU-DI, TAM HOA-YEN. MINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD. Acta Physica Sinica,
1966, 22(9): 976-981.
doi: 10.7498/aps.22.976
|
| [17] |
FUNG SI-CHI, LOG BIN-CHANG, TON FU-DI, CHANG YEN-SING, HONG FU-GUN, TAM HOA-YEN. MEASUREMENTS OF RESISTIVITY AND HALL EFFECT IN SILICON CARBIDE BY THE VAN DER PAUW METHOD. Acta Physica Sinica,
1966, 22(9): 967-975.
doi: 10.7498/aps.22.967
|
| [18] |
. . Acta Physica Sinica,
1966, 22(7): 831-835.
doi: 10.7498/aps.22.831
|
| [19] |
. . Acta Physica Sinica,
1964, 20(3): 287-288.
doi: 10.7498/aps.20.287
|
| [20] |
KUO CHANG-LIN, TAM HAO-YEN. X-RAY STUDIES ON SYNTAXIC COALESCENCE PHENOMENON OF POLYTYPES IN SiC. Acta Physica Sinica,
1964, 20(10): 1037-1047.
doi: 10.7498/aps.20.1037
|
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