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兰州大学物理系,兰州730000
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[1] Yu Sen, Xu Sheng-Rui, Tao Hong-Chang, Wang Hai-Tao, An Xia, Yang He, Xu Kang, Zhang Jin-Cheng, Hao Yue. Ion implantation induced nucleation and epitaxial growth of high-quality AlN. Acta Physica Sinica, 2024, 73(19): 196101. doi: 10.7498/aps.73.20240674 [2] Jiang Xing-Dong, Guan Xing-Yin, Huang Juan-Juan, Fan Xiao-Long, Xue De-Sheng. Recovering in-plane six-fold magnetic symmetry of epitaxial Fe films by N+ implantation. Acta Physica Sinica, 2019, 68(12): 126102. doi: 10.7498/aps.68.20190131 [3] Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua. Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica, 2014, 63(17): 176101. doi: 10.7498/aps.63.176101 [4] Zhu He, Zhang Bing-Po, Wang Miao, Hu Gu-Jin, Dai Ning, Wu Hui-Zhen. Influence of high dose As ion implantation on electrical properties of high resistivity silicon. Acta Physica Sinica, 2014, 63(13): 136803. doi: 10.7498/aps.63.136803 [5] Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703. doi: 10.7498/aps.62.037703 [6] Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting. Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film. Acta Physica Sinica, 2012, 61(16): 168101. doi: 10.7498/aps.61.168101 [7] Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin. Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836. doi: 10.7498/aps.59.4831 [8] Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Zhang Li-Qing. Synthesis of metallic nanoparticles in spinel via defects induced by the inert-gas-ion implantation. Acta Physica Sinica, 2009, 58(1): 399-403. doi: 10.7498/aps.58.399 [9] Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min. Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica, 2009, 58(8): 5693-5699. doi: 10.7498/aps.58.5693 [10] Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113. doi: 10.7498/aps.58.7108 [11] Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169. doi: 10.7498/aps.57.5165 [12] Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935. doi: 10.7498/aps.56.4930 [13] Chen Zhi-Quan, Kawasuso Atsuo. Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357. doi: 10.7498/aps.55.4353 [14] Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei. Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077. doi: 10.7498/aps.55.2073 [15] Hou Juan, Zheng Yu-Feng, Dong You-Zhong, Kuang Dai-Hong, Sun Yan-Fei, Li Qiang. Investigation on the crystal structure, optical and electrical properties of Er3+ implanted CdTe thin film. Acta Physica Sinica, 2006, 55(12): 6684-6690. doi: 10.7498/aps.55.6684 [16] Fang Zhi-Jun, Xia Yi-Ben, Wang Lin-Jun, Zhang Wei-Li, Ma Zhe-Guo, Zhang Ming-Long. Study of the stress observed in diamond films on carbon-implanted alumina surfaces. Acta Physica Sinica, 2003, 52(4): 1028-1033. doi: 10.7498/aps.52.1028 [17] Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng. . Acta Physica Sinica, 2002, 51(3): 629-634. doi: 10.7498/aps.51.629 [18] Li Xiao-Na, Nie Dong, Dong Chuang, Ma Teng-Cai, Jin Xing, Zhang Zhe. . Acta Physica Sinica, 2002, 51(1): 115-124. doi: 10.7498/aps.51.115 [19] WANG YIN-SHU, LI JIN-MIN, WANG YAN-BIN, WANG YU-TIAN, SUN GUO-SHENG, LIN LAN-YING. THE EFFECTS OF PRE-IRRADIATION ON THE FORMATION OF Si1-xCx ALLOYS. Acta Physica Sinica, 2001, 50(7): 1329-1333. doi: 10.7498/aps.50.1329 [20] WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING. THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica, 2000, 49(11): 2210-2213. doi: 10.7498/aps.49.2210
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Publishing process
- Received Date:
25 December 2001
- Accepted Date:
06 March 2002
- Published Online:
05 May 2002