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It is very important to take into consideration the distribution of range, range straggling, and lateral spread of ions implanted into semiconductor materials during designing and fabrication of semiconductor integration devices by means of ion implantation. Er ions with energies between 200 and 500 keV are implanted in SOI (silicon-on-insulator) samples. The mean projection range Rp and the range stragglings Rp of Er ions with a dose of 21015 cm-2 implanted in SOI samples are measured by Rutherford backscattering (RBS) technique. The obtained data are then compared with those predicted by TRIM codes. It is seen that the experimental data of Rp agree well with the theoretical values. However, there are great differences between the experimental data and the theoretical values of Rp.
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Keywords:
- ion implantation /
- silicon-on-insulator /
- projected range and range straggling /
- Rutherford backscattering technique
[1] Ennen H, Schneider J, Pomrenke G, Axmann A 1983 Appl. Phys. Lett. 43 943
[2] Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2009 Acta Phys. Sin. 58 164 (in Chinese)[肖志松, 徐飞, 张通和, 程国安, 顾岚岚 2009 58 164]
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[6] Hansson G V, Du W X, Elfving A, Duteil F 2001 Appl. Phys. Lett. 78 2104
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[14] [15] Chen C Y, Chen W D, Wang Y Q, Song S F, Xu Z J 2003 Acta Phys. Sin. 52 736 (in Chinese)[陈长勇, 陈维德, 王永谦, 宋淑芳, 许振嘉 2003 52 736]
[16] [17] Qin X F, Chen M, Wang X L, Liang Y and Zhang S M 2010 Chin. Phys. B 19 113403
[18] Galli M, Politi A, Belotti M, Gerace D, Liscidini M, Patrini M, Andreani L C 2006 Appl. Phys. Lett. 81 251114
[19] [20] Qin X F, Li H Zh, Li S, Ji Z W, W H N, Wang F X, Fu G 2012 Chin. Phys. B 21 066105
[21] [22] Barrios A, Lipson M 2005 Opt. Express 13 10092
[23] [24] [25] Zelsmann M, Picard E, Charvolin T, Hadji E, Heitzmann M 2003 Appl. Phys. Lett. 83 2542
[26] [27] Qin X F, Ji Z Wu, Chen M, Liu X H, Wang X L, Wang K M, Zhao Q T, Fu G 2012 Nuclear Inst. and Methods in Physics Research B 278 1
[28] [29] Chu W K, Mayer J W, Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) chap 5, p137-141
[30] [31] Liu X D 2003 Ph. D. dissertation (Jinan: Shandong University) (in Chinese)[刘向东2003博士学位论文(济南: 山东大学)]
[32] -
[1] Ennen H, Schneider J, Pomrenke G, Axmann A 1983 Appl. Phys. Lett. 43 943
[2] Xiao Z S, Xu F, Zhang T H, Cheng G A, Gu L L 2009 Acta Phys. Sin. 58 164 (in Chinese)[肖志松, 徐飞, 张通和, 程国安, 顾岚岚 2009 58 164]
[3] [4] [5] Wang J Z, Shi Z Q, Lou H N, Zhang X L, Zuo Z W, Pu L, Ma E, Zhang R, Zheng Y L, Lu F, Shi Y 2009 Acta Phys. Sin. 58 4243 (in Chinese)[王军转, 石卓琼, 娄昊楠, 章新栾, 左则文, 濮林, 马恩, 张荣, 郑有炓, 陆昉, 施毅 2009 58 4243]
[6] Hansson G V, Du W X, Elfving A, Duteil F 2001 Appl. Phys. Lett. 78 2104
[7] [8] Lei H B, Yang Q Q, Wang Q M 1998 Acta Phys. Sin. 47 1201 (in Chinese)[雷红兵, 杨沁清, 王启明 1998 47 1201]
[9] [10] Liang J J, Chen W D, Wang Y Q, Chang Y, Wang Z G 2000 Chin. Phys. 9 783
[11] [12] [13] Ding W C, Liu Y, Zhang Y, Guo J C, Zuo Y H, Cheng B W, Yu J Z, Wang Q M 2009 Chin. Phys. B 18 3044
[14] [15] Chen C Y, Chen W D, Wang Y Q, Song S F, Xu Z J 2003 Acta Phys. Sin. 52 736 (in Chinese)[陈长勇, 陈维德, 王永谦, 宋淑芳, 许振嘉 2003 52 736]
[16] [17] Qin X F, Chen M, Wang X L, Liang Y and Zhang S M 2010 Chin. Phys. B 19 113403
[18] Galli M, Politi A, Belotti M, Gerace D, Liscidini M, Patrini M, Andreani L C 2006 Appl. Phys. Lett. 81 251114
[19] [20] Qin X F, Li H Zh, Li S, Ji Z W, W H N, Wang F X, Fu G 2012 Chin. Phys. B 21 066105
[21] [22] Barrios A, Lipson M 2005 Opt. Express 13 10092
[23] [24] [25] Zelsmann M, Picard E, Charvolin T, Hadji E, Heitzmann M 2003 Appl. Phys. Lett. 83 2542
[26] [27] Qin X F, Ji Z Wu, Chen M, Liu X H, Wang X L, Wang K M, Zhao Q T, Fu G 2012 Nuclear Inst. and Methods in Physics Research B 278 1
[28] [29] Chu W K, Mayer J W, Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) chap 5, p137-141
[30] [31] Liu X D 2003 Ph. D. dissertation (Jinan: Shandong University) (in Chinese)[刘向东2003博士学位论文(济南: 山东大学)]
[32]
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