Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD

Chen Cheng-Zhao; Zheng Yuan-Yu; Huang Shi-Hao; Li Cheng; Lai Hong-Kai; Chen Song-Yan

doi:10.7498/aps.61.078104

Abstract

Thick Ge epitaxial layers are grown on Si(001) substrates in the ultra-high vacuum chemical vapor deposition system by using the method of low temperature buffer layer combining strained layer superlattices. The microstructure and the optical properties of the Ge layers are characterized by double crystal X-ray diffraction, HRTEM, AFM and photoluminescence spectroscopy. The root-mean-square surface roughness of the Ge epilayer with a thickness of 880nm is about 0.24 nm and the full-width-at-half maximum of the Ge peak of the XRD profile is about 273. The etch pit density related to threading dislocations is less than 1.5106 cm-2. The direct band transition photoluminescence is observed at room temperature and the photoluminescence peak is located at 1540 nm. It is indicated that the Ge epitaxial layer is of good quality and will be a promising material for Si-based optoelectronic devices

Keywords:

Authors and contacts

1.
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
2.
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China
Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB613404), the National Natural Science Foundation of China (Grant Nos: 61036003, 60837001), and the Fundamental Research Funds for the Central Universities (Grant No. 2010121056).

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[14]	Currie M T, Samavedam S B, Langdo T A, Leitz C W, Fitzgerald E A 1998 Appl. Phys. Lett. 72 1718
[15]	Vanamua G, Datye A K, Zaidi S H 2006 Appl. Phys. Lett. 88 204104
[16]	Luan H C, Lim D R, Lee K K, Chen K M, Sandland J G, Wada K, Kimerling L C 1999 Appl. Phys. Lett. 75 2909
[17]	Zhang Z, Pan J S, Zhang J, Tok E S 2010 Phys. Chem. Chem. Phys. 12 7171
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Cited By

[1]	Lee M L, Fitzgerald E A, Bulsara M T, Currie M T, Lochtefeld A 2005 J. Appl. Phys. 97 011101
[2]	Jang D, Lee J W, Tachi K, Montes L, Ernst T, Kim G T, Ghibaudo G 2010 Appl. Phys. Lett. 97 073505
[3]	Colace L, Masini G, Galluzzi F, Assanto G, Capellini G, Gaspare L D, Palange E, Evangelisti F 1998 Appl. Phys. Lett. 72 3175
[4]	Bandaru P R, Sahni S, Yablonovitch E, Liu J, Kim H J, Xie Y H 2004 Mater. Sci. Eng. B 113 79
[5]	Oh J, Banerjee S K, Campbell J C 2004 IEEE Photonic Tech. Lett. 16 581
[6]	Liu J F, Sun X C, Pan D, Wang X X, Kimerling L C, Koch T L, Michel J 2007 Opt. Express, 15 11272
[7]	Li C, Chen Y H, Zhou Z W, Lai H K, Chen S Y 2009 Appl. Phys. Lett. 95 251102
[8]	Hu W X, Cheng B W, Xue C L, Xue H Y, Su S J, Bai A Q, Luo L P, Yu Y D, Wang Q M 2009 Appl. Phys. Lett. 95 092102
[9]	Huang S H, Li C, Chen C Z, Zheng Y Y, Lai H K, Chen S Y 2012 Acta. Phys. Sin. 61 036202 (in Chinese) [黄诗浩, 李成, 陈城钊, 郑元宇, 陈松岩 2012 bf 61 036202]
[10]	Luo G L, Hsieh Y C, Chang E Y, Pilkuhn M H, Chien C H, Yang T H, Cheng C C, Chang C Y 2007 J. Appl. Phys. 101 084501
[11]	Archer M J, Law D C, Mesropian S, Haddad M, Fetzer C M, Ackerman A C, Ladous C, King R R, Atwate H A 2008 Appl. Phys. Lett. 92 103503
[12]	Kasper E 2002 Properties of Strained and Relaxed Silicon Germanium (Peking: National Defense Industry Press) pp25—29 (in Chinese) [(德) Erich Kasper 主编余金中译 2002 硅锗的性质 (北京: 国防工业出版社) 第25—29页]
[13]	Tersoff J, LeGoues F K 1994 Phys. Rev. Lett. 72 3570
[14]	Currie M T, Samavedam S B, Langdo T A, Leitz C W, Fitzgerald E A 1998 Appl. Phys. Lett. 72 1718
[15]	Vanamua G, Datye A K, Zaidi S H 2006 Appl. Phys. Lett. 88 204104
[16]	Luan H C, Lim D R, Lee K K, Chen K M, Sandland J G, Wada K, Kimerling L C 1999 Appl. Phys. Lett. 75 2909
[17]	Zhang Z, Pan J S, Zhang J, Tok E S 2010 Phys. Chem. Chem. Phys. 12 7171
[18]	Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta. Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 60 028101]
[19]	LeGoues F K, Meyerson B S, Morar J F 1991 Phys. Rev. Lett. 66 2903
[20]	Ishikawa Y, Wada K, Liu J F, Cannon D D, Luan H C, Michel J, Kimerling C 2005 J. Appl. Phys. 98 013501

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Vol. 61, Issue 7 - 2012-04-05

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