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Ge0.975Sn0.025 alloy films have been grown on Si(001) substrates by molecular beam epitaxy with high-quality Ge films as buffer layers.The alloys have high crystalline quality without Sn surface segregation, determined by double crystal X-ray diffraction and Rutherford backscattering spectra measurement. In addition, the Ge0.975Sn0.025 alloy has rather good thermal stability at 500 ℃, which makes it possible to be used in Si-based optoelectronic devices.
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Keywords:
- GeSn /
- Ge /
- molecular beam epitaxy /
- epitaxial growth
[1] D’Costa V R, Cook C S, Birdwell A G, Littler C L, Canonico M, Zollner S, Kouvetakis J, Menendez J 2006 Phys. Rev. B 73 125207
[2] Gurdal O, Hasan M A, Sardela M R, Greene Jr J E, Radamson H H, Sundgren J E, Hansson G V 1995 Appl. Phys. Lett. 67 956
[3] He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[4] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[5] Kouvetakis J, Menendez J, Chizmeshya A V G 2006 Annu. Rev. Mater. Res. 36 497
[6] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[7] D’Costa V R, Fang Y Y, Mathews J, Roucka R, Tolle J, Menendez J, Kouvetakis J 2009 Semicond. Sci. Technol. 24 115006
[8] Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[9] Halbwax M, Bouchier D, Yam V, Debarre D, Nguyen L H, Zheng Y, Rosner P, Benamara M, Strunk H P, Clerc C 2005 J. Appl. Phys. 97 064907
[10] Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group Ⅳ Photonics Sorrento, Italy, September 17—19 , 2008 p140
[11] Xue H Y, Xue C L, Cheng B W, Yu Y D, Wang Q M 2009 Chin. Phys. B 18 2542
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[1] D’Costa V R, Cook C S, Birdwell A G, Littler C L, Canonico M, Zollner S, Kouvetakis J, Menendez J 2006 Phys. Rev. B 73 125207
[2] Gurdal O, Hasan M A, Sardela M R, Greene Jr J E, Radamson H H, Sundgren J E, Hansson G V 1995 Appl. Phys. Lett. 67 956
[3] He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[4] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[5] Kouvetakis J, Menendez J, Chizmeshya A V G 2006 Annu. Rev. Mater. Res. 36 497
[6] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[7] D’Costa V R, Fang Y Y, Mathews J, Roucka R, Tolle J, Menendez J, Kouvetakis J 2009 Semicond. Sci. Technol. 24 115006
[8] Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[9] Halbwax M, Bouchier D, Yam V, Debarre D, Nguyen L H, Zheng Y, Rosner P, Benamara M, Strunk H P, Clerc C 2005 J. Appl. Phys. 97 064907
[10] Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group Ⅳ Photonics Sorrento, Italy, September 17—19 , 2008 p140
[11] Xue H Y, Xue C L, Cheng B W, Yu Y D, Wang Q M 2009 Chin. Phys. B 18 2542
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