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To further understand the patterns and mechanisms of total ionizing dose (TID) radiation damage in carbon nanotube field-effect transistor (CNTFET), the total dose effects of 10 keV X-ray irradiation on N-type and P-type CNTFETs are investigated in this work. The irradiation dose rate is 200 rad(Si)/s, with a cumulative dose of 100 krad(Si) for N-type devices and 90 krad(Si) for P-type devices. The differences in TID effect between N-type and P-type CNTFETs under the conditions of floating gate bias and on-state bias, the influence of irradiation on the hysteresis characteristics of N-type CNTFETs, and the influence of channel sizes on the TID effects of N-type CNTFETs are also explored. The results indicate that both types of transistors, after being irradiated, exhibit the threshold voltage shift, transconductance degradation, increase in subthreshold swing, and decrease in saturation current. In the irradiation process, N-type devices under floating gate bias suffer more severe damage than those under on-state bias, while P-type devices under on-state bias experience more significant damage than those under floating gate bias. The hysteresis widths of N-type devices decrease after being irradiated, and the TID damage becomes more severe with the increase of channel dimensions. The main reason for the degradation of device parameters is the trap charges generated in the irradiated process. The gate bias applied during irradiation affects the capture of electrons or holes by traps in the gate dielectric, resulting in different radiation damage characteristics for different types of devices. The reduction in the hysteresis width of N-type devices after being irradiated may be attributed to the negatively charged trap charges generated during irradiation, which hinders the capture of electrons by water molecules, OH groups, and traps in the gate dielectric. Moreover, the channel dimensions of the transistors also influence their radiation response: larger channel dimensions result in more trap charges generated in the gate dielectric and at the interface during irradiation, leading to more severe transistor damage.
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图 1 器件结构示意图
Figure 1. Device structure diagram.
图 2 辐照前后N型器件的电学曲线 (a)转移特性曲线; (b)输出特性曲线
Figure 2. Electrical curves of N-type devices before and after irradiation: (a) Transfer characteristic curve; (b) output characteristic curve.
图 3 辐照前后P型器件的电学曲线 (a)转移特性曲线; (b)输出特性曲线
Figure 3. Electrical curves of P-type devices before and after irradiation: (a) Transfer characteristic curve; (b) output characteristic curve.
图 4 辐照前后N型和P型器件的电学参数 (a)跨导; (b)亚阈值摆幅; (c)阈值电压
Figure 4. Electrical parameters of N-type and P-type devices before and after irradiation: (a) Transconductance; (b) subthreshold swing; (c) threshold voltage.
图 5 不同偏置条件下辐照前后的转移特性曲线 (a) N型器件; (b) P型器件
Figure 5. Transfer characteristic curves before and after irradiation under different bias conditions: (a) N-type devices; (b) P-type devices.
图 6 辐照前后回滞特性的变化
Figure 6. Changes in hysteresis characteristics before and after irradiation.
图 7 辐照前后不同沟道尺寸的CNTFET转移曲线
Figure 7. Transfer curves of CNTFET with different channel sizes before and after irradiation.
图 8 不同沟道尺寸的未辐照CNTFET归一化后的转移特性曲线与跨导
Figure 8. Normalized transfer characteristic curves and transconductance of unirradiated CNTFET with different channel sizes.
表 1 N型和P型器件辐照前后电学参数变化量
Table 1. Changes in electrical parameters of N-type and P-type devices before and after irradiation.
器件类型 ΔGm/μS 标准差 ΔSS/(mV·dec–1) 标准差 ΔVth/mV 标准差 N型器件 –0.275 0.02 50 0.015 149 0.025 P型器件 –1 0.022 20 0.02 –45 0.018 
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表 2 辐照前后不同沟道尺寸的CNTFET电学参数变化
Table 2. Changes in electrical parameters of CNTFET with different channel sizes before and after irradiation.
宽长比 ΔGm/μS ΔSS/(mV·dec–1) ΔVth/V 30 µm/5 µm –0.34 52 0.15 35 µm/5 µm –0.35 53 0.19 40 µm/5 µm –0.65 60 0.7
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