Highly sensitive broadband terahertz modulator based on MAPbI<sub>3</sub>/Graphene/Si composite structure

Lai Wei-En; Wu Zong-Dong; Li Li-Qi; Liu Gen; Fang Yan-Jun

doi:10.7498/aps.72.20230527

Abstract

A high-performance silicon-based terahertz modulator is one of the key devices for building an ultrawideband terahertz-fiber hybrid communication system. In this paper, an ultrawideband terahertz modulator with large modulation depth based on a chalcogenide/graphene/silicon (MAPbI₃/Graphene/Si) composite structure driven by near-infrared light (NIR) is proposed. The experimental results show that the graphene thin film and the chalcogenide hole transport layer can effectively promote the interfacial charge separation, increase the carrier complex lifetime, significantly enhance the surface conductivity of the device, further modulate the terahertz wave transmission amplitude, and realize the function of the light-controlled terahertz wave modulator under the NIR light drive. The terahertz transmission characteristics of the device are characterized by an 808 nm NIR modulation excitation source, and a large modulation depth of up to 88.3% is achieved in an ultra-wide frequency range of 0.2–2.5 THz and a low power density of 6.1 mW/mm² driven by NIR light, which is much higher than that of the bare silicon substrate (14.0%), with the significant advantages of high sensitivity, broadband, and large modulation depth. The corresponding semi-analytical device model is established and the experimental results are verified by simulation. The proposed MAPbI₃/Graphene composite thin film is effective in enhancing the silicon-based modulator performance and provides a new strategy for the future integration of silicon-based terahertz modulators in NIR terahertz-fiber hybrid communication systems.

Keywords:

Authors and contacts

1.
Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, National Engineering Laboratory of Special Display Technology, Academy of Opto-electronic Technology, School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology, Hefei 230009, China
2.
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding author: Lai Wei-En, wnlai@hfut.edu.cn ; Fang Yan-Jun, jkfang@zju.edu.cn

Funds: Project supported by the University Synergy Innovation Program of Anhui Province, China (Grant No. GXXT-2022-015) and the National Natural Science Foundation of China (Grant No. 61905058).

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References

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Cited By

图 1 (a) MAPbI₃/Graphene基调制器结构示意图, 左侧为三维示意图, 右侧为侧视图; (b)硅基底上MAPbI₃/Graphene复合薄膜的SEM表征图, 左侧为俯视图, 右侧为侧视图; (c) MAPbI₃薄膜在波长500—800 nm下的吸收光谱

Figure 1. (a) Schematic diagram of MAPbI₃/Graphene-based modulator structure; left, 3D schematic; right, side view; (b) SEM characterization of MAPbI₃/Graphene composite thin film on silicon substrate; left, top view; right, side view; (c) absorption spectrum of MAPbI₃ thin film at the wavelength range of 500–800 nm.

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图 2 (a) MAPbI₃/Graphene模型光照示意图; (b) MAPbI₃/Graphene复合薄膜加光激励后的能带示意图以及电子-空穴的流动情况

Figure 2. (a) Schematic of MAPbI₃/Graphene model with light; (b) schematic diagram of energy band of MAPbI₃/Graphene composite thin film after adding light excitation and electron-hole flow condition.

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图 3 (a) Graphene/Si调制器和(b) MAPbI₃/Graphene/Si调制器的I-V曲线测试示意图; (c) Graphene/Si调制器和(d) MAPbI₃/Graphene/Si调制器在光照(红线)和无光照(蓝线)下的I-V测试曲线; (e) Graphene/Si调制器和(f) MAPbI₃/Graphene/Si调制器在0.5 V偏压, 15.1 mW功率光激励下的开关响应曲线

Figure 3. Schematic diagram of I-V curve test for (a) Graphene/Si modulator and (b) MAPbI₃/Graphene/Si modulator; I-V test curves for (c) Graphene/Si modulator and (d) MAPbI₃/Graphene/Si modulator under light (red line) and no light (blue line); switching response curves of (e) Graphene/Si modulator and (f) MAPbI₃/Graphene/Si modulator under light excitation with 0.5 V bias and 15.1 mW power.

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图 4 在不同功率密度的激光照射下通过(a)裸硅和(b) MAPbI₃/Graphene/Si传输的太赫兹脉冲时域波形; 在不同功率密度的激光照射下通过(c)裸硅和(d) MAPbI₃/Graphene/Si传输的太赫兹脉冲的归一化透射; 在不同功率密度的激光照射下(e) 裸硅和(f) MAPbI₃/Graphene/Si的太赫兹调制深度

Figure 4. Time domain waveforms of terahertz pulses transmitted through (a) bare silicon and (b) MAPbI₃/Graphene/Si under laser irradiation at different power density; normalized transmission of terahertz pulses transmitted through (c) bare silicon and (d) MAPbI₃/Graphene/Si under laser irradiation at different power density; terahertz modulation depth of (e) bare silicon and (f) MAPbI₃/Graphene/Si under laser irradiation at different power density.

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图 5 (a) MAPbI₃/Graphene/Si复合结构的响应时间测试示意图; (b) 器件的响应时间函数

Figure 5. (a) Schematic diagram of response time testing of MAPbI₃/Graphene/Si composite structure; (b) response time function of device.

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图 6 (a) 仿真模拟模型示意图; (b) 通过改变模型的电导率来调制太赫兹脉冲的波形

Figure 6. (a) Schematic diagram of the simulated model; (b) waveform of modulated terahertz pulse by changing conductivity of model.

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表 1 常见太赫兹调制器性能比较

Table 1. Performance comparison of common terahertz modulators.

Material	Wavelength/nm	Power density/(mW·mm^–2)	Spectral range/THz	MD/%	Reference
MAPbI₃/Graphene/Si	808	6.1	0.2—2.5	88.3	This work
MAPbI₃/SiO₂	1064	53.1	0.1—1.0	66.2	[33]
MoS₂/Si	532	2.4	0.2—2.0	75.0	[34]
Graphene/TiO₂/Si	808	71.3	0.3—1.7	88.0	[35]
Silicon nanotip	808	60.0	0.1—4.0	91.6	[36]
MAPbBr₃/Si	450	30.0	0.2—2.6	80.0	[37]
CsPbBr₃/Si	450	20.0	0.23—0.35	45.5	[38]
Graphene/Si	780	159.2	0.2—2.0	99.0	[29]

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map

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Highly sensitive broadband terahertz modulator based on MAPbI₃/Graphene/Si composite structure

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Corresponding author: Lai Wei-En, wnlai@hfut.edu.cn ; Fang Yan-Jun, jkfang@zju.edu.cn

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Highly sensitive broadband terahertz modulator based on MAPbI3/Graphene/Si composite structure

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Corresponding author: Lai Wei-En, wnlai@hfut.edu.cn ; Fang Yan-Jun, jkfang@zju.edu.cn

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Highly sensitive broadband terahertz modulator based on MAPbI₃/Graphene/Si composite structure