Anomalous Hall effect in Pt/La0.67Sr0.33MnO3 heterojunctions

Hu Shi-Lin; Liu Jun-Hua; Deng Zhi-Xiong; Xiao Wen; Yang Zhan; Chen Kai; Liao Zhao-Liang

doi:10.7498/aps.72.20221852

Abstract

Many emergent and novel phenomena occur in nonmagnetic/ferromagnet heterostructures. In particular, Pt/ferromagnet heterostructures where the Pt has strong spin-orbit coupling and thus can convert spin current into charge current, has attracted a great attention recently. The anomalous Hall effect (AHE) has been found in many Pt/ferromagnet heterostructures. However, the underlying physics remains elusive, so it is necessary to find more heterostructures in order to provide more experimental data. In this work, we investigate anomalous Hall resistances (AHRs) in Pt thin films sputtered on epitaxial La_0.67Sr_0.33MnO₃ (LSMO) ferromagnetic films. High-quality Pt/LSMO heterojunctions are fabricated by pulsed laser deposition and RF-magnetron sputtering. The physical properties of LSMO films are characterized by the measurements of magnetic and transport properties. The AHR mainly contributed by Pt in the Pt/LSMO heterojunction increases sharply with temperature decreasing and changes its sign below 40 K. Furthermore, the AHR decreases sharply with the increase of Pt thickness. Those facts suggest that the ferromagnetism of Pt originates from interface due to magnetic proximity effect. Interestingly, this heterojunction can exhibit possible signal of topological Hall effect under low applied magnetic field. The above results provide an experimental basis for further understanding the interactions between electron spin and charge transport in nonmagnetic/ferromagnetic heterostructures.

Keywords:

Authors and contacts

1.
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
2.
School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

Corresponding author: Liao Zhao-Liang, zliao@ustc.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11974325) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. WK2030000035).

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References

[1]	Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H, Awschalom D D 1999 Nature 402 790 Google Scholar
[2]	Jedema F J, Filip A T, Wees B J V 2001 Nature 410 345 Google Scholar
[3]	Heinrich B, Tserkovnyak Y, Woltersdorf G, Brataas A, Urban R, Bauer G E W 2003 Phys. Rev. Lett. 90 187601 Google Scholar
[4]	Kajiwara Y, Harii K, Takahashi S, Ohe J, Uchida K, Mizuguchi M, Umezawa H, Kawai H, Ando K, Takanashi K, Maekawa S, Saitoh E 2010 Nature 464 262 Google Scholar
[5]	Heinrich B, Burrowes C, Montoya E, Kardasz B, Girt E, Song Y Y, Sun Y Y, Wu M Z 2011 Phys. Rev. Lett. 107 066604 Google Scholar
[6]	Rezende S M, Rodriguez S R L, Soares M M, Vilela L L H, Ley D D, Azevedo A 2013 Appl. Phys. Lett. 102 012402 Google Scholar
[7]	Uchida K, Takahashi S, Harii K, Ieda J, Koshibae W, Ando K, Maekawa S, Saitoh E 2008 Nature 455 778 Google Scholar
[8]	Uchida K, Xiao J, Adachi H, Ohe J, Takahashi S, Ieda J, Ota T, Kajiwara Y, Umezawa H, Kawai H, Bauer G E W, Maekawa S, Saitoh E 2010 Nat. Mater. 9 894 Google Scholar
[9]	Weng H M, Yu R, Hu X, Dai X, Fang Z 2015 Adv. Phys. 64 03227 Google Scholar
[10]	Takahashi S, Maekawa S 2008 Sci. Technol. Adv. Mater. 9 014105 Google Scholar
[11]	Miao B F, Huang S Y, Qu D, Chien C L 2014 Phys. Rev. Lett. 112 236601 Google Scholar
[12]	Althammer M, Meyer S, Nakayama H, Schreier M, Altmannshofer S, Weiler M, Huebl H, Geprags S, Opel M, Gross R, Meier D, Klewe C, Kuschel T, Schmalhorst J M, Reiss G, Shen L M, Gupta A, Chen Y T, Bauer G E W, Saitoh E, Goennenwein S T B 2013 Phys. Rev. B 87 224401 Google Scholar
[13]	Lu Y M, Choi Y, Ortega C M, Cheng X M, Cai J W, Huang S Y, Sun L, Chien C L 2013 Phys. Rev. Lett. 110 147207 Google Scholar
[14]	Isasa M, Pinto A B, Velez S, Golmar F, Sanchez F, Hueso L E, Fontcuberta J, Casanova F 2014 Appl. Phys. Lett. 105 142402 Google Scholar
[15]	Shang T, Zhan Q F, Yang H L, Zuo Z H, Xie Y L, Zhang Y, Liu L P, Wang B M, Wu Y H, Zhang S, Li R W 2015 Phys. Rev. B 92 165114 Google Scholar
[16]	Liao Z L, Li F M, Gao P, Li L, Guo J D, Pan X Q, Jin R, Plummer E W, Zhang J D 2015 Phys. Rev. B 92 125123 Google Scholar
[17]	Uchida K, Qiu Z Y, Kikkawa T, Lguchi R L, Saitoh E 2015 Appl. Phys. Lett. 106 052405 Google Scholar
[18]	Putter S, Geprags S, Schlitz R, Althammer M, Erb A, Gross R, Goennenwein S T B 2017 Appl. Phys. Lett. 110 012403 Google Scholar
[19]	Biswas A, Yang C H, Ramesh R, Jeong M H 2017 Prog. Surf. Sci. 92 02117 Google Scholar
[20]	Peng R, Xu H C, Xia M, Zhao J F, Xie X, Xu D F, Xie B P, Feng D L 2014 Appl. Phys. Lett. 104 081606 Google Scholar
[21]	Snyder G J, Hiskes R, DiCarolis S, Beasley M R, Geballe T H 1996 Phys. Rev. B 53 14434 Google Scholar
[22]	Huang S Y, Fan X, Qu D, Chen Y P, Wang W G, Wu J, Chen T Y, Xiao J Q, Chien C L 2012 Phys. Rev. Lett. 109 107204 Google Scholar
[23]	Soumyanarayanan A, Raju M, Oyarce A L G, Tan A K C, Im M Y, Petrovi A P, Ho P, Khoo K H, Tran M, Gan C K, Ernult F, Panagopoulos C 2017 Nat. Mater. 16 898 Google Scholar
[24]	Zhang S, Zhang S S L 2009 Phys. Rev. Lett. 102 086601 Google Scholar
[25]	Li Y, Kanazawa N, Yu X Z, Tsukazaki A, Kawasaki M, Ichikawa M, Jin X F, Kagawa F, Tokura Y 2013 Phys. Rev. Lett. 110 117202 Google Scholar
[26]	Belabbes A, Bihlmayer G, Bechstedt F, Blügel S, Manchon A 2016 Phys. Rev. Lett. 117 247202 Google Scholar
[27]	Meng K K, Zhao X P, Liu P F, Liu Q, Wu Y, Li Z P, Chen J K, Miao J, Xu X G, Zhao J H, Jiang Y 2018 Phys. Rev. B 97 060407 Google Scholar

Cited By

图 1 LSMO薄膜生长　(a) RHEED周期振荡; (b) 薄膜生长前的RHEED衍射图; (c) 薄膜生长后的RHEED衍射图

Figure 1. The LSMO thin film growth: (a) RHEED oscillation; (b) RHEED pattern before film growth; (c) RHEED pattern after film growth.

DownLoad: Full-Size Img PowerPoint

图 2 形貌表征　(a) STO (001)衬底AFM图; (b) LSMO (40 u.c.)薄膜AFM图; (c) Pt(2 nm)/LSMO(40 u.c.)薄膜AFM图; (d)和(e)分别为(b)和(c)中薄膜表面线扫描图

Figure 2. Morphology characterization: (a) AFM image of STO (001) substrate; (b) AFM image of LSMO (40 u.c.) film; (c) AFM image of Pt(2 nm)/LSMO(40 u.c.) film; (d) line-scan of the LSMO film in (b); (e) line-scan of the Pt/LSMO film in (c).

DownLoad: Full-Size Img PowerPoint

图 3 结构表征　(a) Pt(6 nm)/LSMO(40 u.c.)薄膜的2θ-ω扫描; (b)为(a)中(002)衍射峰的放大图, 插图为LSMO薄膜(002)衍射峰的摇摆曲线; (c) Pt/LSMO薄膜在(103)衍射峰附近的倒易空间图; (d) Pt/LSMO薄膜的XRR谱, 拟合的红线与实验数据相符

Figure 3. Structure characterization: (a) 2θ-ω scan of Pt(6 nm)/LSMO(40 u.c.) thin films; (b) enlarged view of the (002) diffraction peak in panel (a), and the inset is a rocking curve of LSMO film around (002) diffraction peak; (c) reciprocal space map of Pt/ LSMO film around (103) diffraction peak; (d) XRR spectrum of Pt/LSMO film, and the red line is a fit to the experimental data

DownLoad: Full-Size Img PowerPoint

图 4 (a) LSMO (40 u.c.)薄膜的磁化强度的温度依赖性, 插图为磁化强度对温度的一阶微分; (b) LSMO (40 u.c.)薄膜不同温度下的磁化强度的场依赖性, 插图为3 K时曲线的中心放大图

Figure 4. (a) Temperature dependence of magnetization of LSMO (40 u.c.) films, the inset is the first derivative of magnetization versus temperature; (b) field dependence of the magnetization of LSMO (40 u.c.) films at different temperatures, and the inset is an enlarged view of the curve at 3 K.

DownLoad: Full-Size Img PowerPoint

图 5 LSMO(40 u.c.)薄膜与Pt(2 nm)/LSMO(40 u.c.)薄膜电阻的温度依赖性

Figure 5. Temperature dependence of resistance of LSMO (40 u.c.) film and Pt(2 nm)/LSMO(40 u.c.) film.

DownLoad: Full-Size Img PowerPoint

图 6 (a) LSMO(40 u.c.)薄膜和(b) Pt(2 nm)/LSMO(40 u.c.)薄膜在不同温度下的R_AHR, 图(a)插图为2 K时测量的LSMO薄膜的R_xy

Figure 6. R_AHR of (a) LSMO (40 u.c.) film and (b) Pt(2 nm)/LSMO(40 u.c.) film at different temperatures. The inset in panel (a) is R_xy of the LSMO film measured at 2 K.

DownLoad: Full-Size Img PowerPoint

图 7 (a) 在2 K时不同Pt厚度的Pt/LSMO(40 u.c.)薄膜的R_AHR, 其中4和6 nm曲线的R_AHR分别扩大了4倍和5倍; (b) Pt(6 nm)/LSMO(40 u.c.)薄膜在不同温度下的R_AHR

Figure 7. (a) R_AHR of Pt/LSMO(40 u.c.) film with different Pt thickness, which were measured at 2 K. R_AHR of the 4 and 6 nm curves are enlarged by a factor of four and five, respectively; (b) R_AHR of Pt(6 nm)/LSMO(40 u.c.) films at different temperatures.

DownLoad: Full-Size Img PowerPoint

map

[1]	Ohno Y, Young D K, Beschoten B, Matsukura F, Ohno H, Awschalom D D 1999 Nature 402 790 Google Scholar
[2]	Jedema F J, Filip A T, Wees B J V 2001 Nature 410 345 Google Scholar
[3]	Heinrich B, Tserkovnyak Y, Woltersdorf G, Brataas A, Urban R, Bauer G E W 2003 Phys. Rev. Lett. 90 187601 Google Scholar
[4]	Kajiwara Y, Harii K, Takahashi S, Ohe J, Uchida K, Mizuguchi M, Umezawa H, Kawai H, Ando K, Takanashi K, Maekawa S, Saitoh E 2010 Nature 464 262 Google Scholar
[5]	Heinrich B, Burrowes C, Montoya E, Kardasz B, Girt E, Song Y Y, Sun Y Y, Wu M Z 2011 Phys. Rev. Lett. 107 066604 Google Scholar
[6]	Rezende S M, Rodriguez S R L, Soares M M, Vilela L L H, Ley D D, Azevedo A 2013 Appl. Phys. Lett. 102 012402 Google Scholar
[7]	Uchida K, Takahashi S, Harii K, Ieda J, Koshibae W, Ando K, Maekawa S, Saitoh E 2008 Nature 455 778 Google Scholar
[8]	Uchida K, Xiao J, Adachi H, Ohe J, Takahashi S, Ieda J, Ota T, Kajiwara Y, Umezawa H, Kawai H, Bauer G E W, Maekawa S, Saitoh E 2010 Nat. Mater. 9 894 Google Scholar
[9]	Weng H M, Yu R, Hu X, Dai X, Fang Z 2015 Adv. Phys. 64 03227 Google Scholar
[10]	Takahashi S, Maekawa S 2008 Sci. Technol. Adv. Mater. 9 014105 Google Scholar
[11]	Miao B F, Huang S Y, Qu D, Chien C L 2014 Phys. Rev. Lett. 112 236601 Google Scholar
[12]	Althammer M, Meyer S, Nakayama H, Schreier M, Altmannshofer S, Weiler M, Huebl H, Geprags S, Opel M, Gross R, Meier D, Klewe C, Kuschel T, Schmalhorst J M, Reiss G, Shen L M, Gupta A, Chen Y T, Bauer G E W, Saitoh E, Goennenwein S T B 2013 Phys. Rev. B 87 224401 Google Scholar
[13]	Lu Y M, Choi Y, Ortega C M, Cheng X M, Cai J W, Huang S Y, Sun L, Chien C L 2013 Phys. Rev. Lett. 110 147207 Google Scholar
[14]	Isasa M, Pinto A B, Velez S, Golmar F, Sanchez F, Hueso L E, Fontcuberta J, Casanova F 2014 Appl. Phys. Lett. 105 142402 Google Scholar
[15]	Shang T, Zhan Q F, Yang H L, Zuo Z H, Xie Y L, Zhang Y, Liu L P, Wang B M, Wu Y H, Zhang S, Li R W 2015 Phys. Rev. B 92 165114 Google Scholar
[16]	Liao Z L, Li F M, Gao P, Li L, Guo J D, Pan X Q, Jin R, Plummer E W, Zhang J D 2015 Phys. Rev. B 92 125123 Google Scholar
[17]	Uchida K, Qiu Z Y, Kikkawa T, Lguchi R L, Saitoh E 2015 Appl. Phys. Lett. 106 052405 Google Scholar
[18]	Putter S, Geprags S, Schlitz R, Althammer M, Erb A, Gross R, Goennenwein S T B 2017 Appl. Phys. Lett. 110 012403 Google Scholar
[19]	Biswas A, Yang C H, Ramesh R, Jeong M H 2017 Prog. Surf. Sci. 92 02117 Google Scholar
[20]	Peng R, Xu H C, Xia M, Zhao J F, Xie X, Xu D F, Xie B P, Feng D L 2014 Appl. Phys. Lett. 104 081606 Google Scholar
[21]	Snyder G J, Hiskes R, DiCarolis S, Beasley M R, Geballe T H 1996 Phys. Rev. B 53 14434 Google Scholar
[22]	Huang S Y, Fan X, Qu D, Chen Y P, Wang W G, Wu J, Chen T Y, Xiao J Q, Chien C L 2012 Phys. Rev. Lett. 109 107204 Google Scholar
[23]	Soumyanarayanan A, Raju M, Oyarce A L G, Tan A K C, Im M Y, Petrovi A P, Ho P, Khoo K H, Tran M, Gan C K, Ernult F, Panagopoulos C 2017 Nat. Mater. 16 898 Google Scholar
[24]	Zhang S, Zhang S S L 2009 Phys. Rev. Lett. 102 086601 Google Scholar
[25]	Li Y, Kanazawa N, Yu X Z, Tsukazaki A, Kawasaki M, Ichikawa M, Jin X F, Kagawa F, Tokura Y 2013 Phys. Rev. Lett. 110 117202 Google Scholar
[26]	Belabbes A, Bihlmayer G, Bechstedt F, Blügel S, Manchon A 2016 Phys. Rev. Lett. 117 247202 Google Scholar
[27]	Meng K K, Zhao X P, Liu P F, Liu Q, Wu Y, Li Z P, Chen J K, Miao J, Xu X G, Zhao J H, Jiang Y 2018 Phys. Rev. B 97 060407 Google Scholar

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Anomalous Hall effect in Pt/La_0.67Sr_0.33MnO₃ heterojunctions