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In this paper, the 60-MeV proton beam is used to carry out the proton irradiation experiment on NAND (not and) flash memory, the single-event-upset cross section data of the floating gate cell are obtained, the annealing rule of the floating gate cell errors is analyzed, and the effect of proton irradiation on the data retention capability of floating gate cells is studied. The obtained results are as follows. The single-event-upset cross section of the floating gate cell increases with the increase of proton energy, and decreases with the increase of proton fluence. The floating gate cell errors continue to increase over time, and this effect is more pronounced when low energy protons are incident. After proton irradiation, the data retention capability of the floating gate cell is significantly degraded. The analysis suggests that the high energy protons are indirectly ionized through the nuclear reaction with the target atom, causing single-event-upset of the floating gate cell. The correlation between the upset cross section and the proton fluence is due to the difference in single-event-effect sensitivity of the floating gate cell. The proton-induced non-ionizing damage can form partially permanent defect damage in the tunnel oxide layer, creating multiple auxiliary trap channels that can leak floating gate electrons, resulting in the increase of floating gate cell errors and the degradation of data retention capability.
[1] Gerardin S, Bagatin M, Paccagnella A, Ferlet-Cavrois V, Frost C D 2014 IEEE Trans. Nucl. Sci. 61 1799
Google Scholar
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Google Scholar
[3] Cao Y, Tian G L, Sandip M, Bi J S, Xi K, Li B 2021 Semicond. Sci. Technol. 36 045013
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
Cao Y, Xi K, Xu Y N, Li M, Li B, Bi J S, Liu M 2019 Acta Phys. Sin. 68 038501
Google Scholar
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Google Scholar
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Google Scholar
[9] Cellere G, Paccagnella A, Visconti A, Bonanomi M, Virtanen A 2008 IEEE Trans. Nucl. Sci. 55 2042
Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
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Google Scholar
[15] 彭聪 2020 硕士学位论文 (南京: 南京航空航天大学)
Peng C 2020 M. S. Thesis (Nanjing: Nanjing University of Aeronautics and Astronautics) (in Chinese)
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Google Scholar
[17] Bi J S, Xi K, Li B, Wang H, Ji L L, Li J, Liu M 2018 Chinese Phys. B 27 098501
Google Scholar
[18] 殷亚楠 2018 博士学位论文 (北京: 中国科学院大学)
Yin Y N 2018 Ph. D. Dissertation (Beijing: University of Chinese Academy of Sciences) (in Chinese)
[19] Guertin S M, Nguyen D M, Patterson J D 2006 IEEE Trans. Nucl. Sci. 53 3518
Google Scholar
[20] 何安林 2016 博士学位论文 (北京: 中国原子能科学研究院)
He A L 2016 Ph. D. Dissertation (Beijing: China institute of atomic energy) (in Chinese)
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Google Scholar
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Lai Z W 1998 Anti-radiation Electronics—Radiation Effects and Hardening Principles (Beijing: National Defense Industry Press) p21 (in Chinese)
[23] Cellere G, Pellati P, Chimenton A, Wyss J, Modelli A, Larcher L, Paccagnella A 2001 IEEE Trans. Nucl. Sci. 48 2222
Google Scholar
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Google Scholar
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图 1 25 nm SLC阵列浮栅单元的TEM横截面
Figure 1. TEM cross-section of 25 nm SLC floating cells array.
图 2 不同能量的质子辐照下浮栅单元SEU截面
Figure 2. Single event upset cross section of floating gate cells irradiated by protons at different energy levels.
图 4 不同注量的质子辐照下浮栅单元SEU截面
Figure 4. Single event upset cross section of floating gate cells irradiated by protons at different fluence levels.
图 5 浮栅单元阈值电压的分布示意图 (a) 辐照前; (b) 辐照后
Figure 5. Schematic illustrations of floating gate cell distribution vs. threshold voltage: (a) Before the irradiation; (b) after the irradiation.
图 6 不同机制影响下的浮栅单元阈值电压变化示意图
Figure 6. Schematic illustrations of threshold voltage changes of floating gate cells under the influence of different mechanisms.
图 7 不同能量质子辐照后45天内浮栅单元错误变化
Figure 7. Annealing of floating gate errors within 45 days after proton irradiation at different energy levels.
图 8 单位深度的非电离能量损失随质子能量的变化
Figure 8. The non-ionizing energy loss per unit depth varies with the proton energy.
图 9 重新写入不同数据后45天内浮栅单元错误变化
Figure 9. Annealing of floating gate errors within 45 days after rewriting different data.
图 10 重新写入不同数据后浮栅单元阈值电压变化示意图
Figure 10. Schematic illustration of threshold voltage changes of floating gate cells after rewriting different data.
表 1 实验所用flash存储器信息
Table 1. Flash memory information used in the experiment.
器件型号 标码 特征
尺寸/nm存储
容量/GMT29F32G08ABAAA(SLC) 1950 1-7 25 32 MT29F32G08CBACA(MLC) 1550 1-2 25 32 
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[1] Gerardin S, Bagatin M, Paccagnella A, Ferlet-Cavrois V, Frost C D 2014 IEEE Trans. Nucl. Sci. 61 1799
Google Scholar
[2] Peng C, Chen W, Luo Y H, Zhang F Q, Tang X B, Sheng J K, Ding L L, Wang Z B 2019 Jpn. J. Appl. Phys. 58 126002
Google Scholar
[3] Cao Y, Tian G L, Sandip M, Bi J S, Xi K, Li B 2021 Semicond. Sci. Technol. 36 045013
Google Scholar
[4] Oldham T R, Friendlich M, Carts M A, Seidleck C M, Label K A 2011 IEEE Trans. Nucl. Sci. 56 2904
Google Scholar
[5] Schwartz H R, Nichols D K Johnston A H 1997 IEEE Trans. Nucl. Sci. 44 2315
Google Scholar
[6] 曹杨, 习凯, 徐彦楠, 李梅, 李博, 毕津顺, 刘明 2019 68 038501
Google Scholar
Cao Y, Xi K, Xu Y N, Li M, Li B, Bi J S, Liu M 2019 Acta Phys. Sin. 68 038501
Google Scholar
[7] Cellere G, Paccagnella A, Visconti A, Bonanomi M 2006 IEEE Trans. Nucl. Sci. 53 3349
Google Scholar
[8] Gerardin S, Bagatin M, Paccagnella A, Cellere G, Visconti A, Bonanomi M, Hjalmarsson A, Prokofiev A V 2010 IEEE Trans. Nucl. Sci. 57 3199
Google Scholar
[9] Cellere G, Paccagnella A, Visconti A, Bonanomi M, Virtanen A 2008 IEEE Trans. Nucl. Sci. 55 2042
Google Scholar
[10] Irom F, Nguyen D N, Bagatin M, Cellere G, Gerardin S, Paccagnella A 2010 IEEE Trans. Nucl. Sci. 57 266
Google Scholar
[11] Guo J L, Du G H, Bi J S, Liu W J, Wu R Q, Chen H, Wei J Z, Li Y N, Sheng L N, Liu X J, Ma S Y 2017 Nucl. Instrum. Meth. B 404 250
Google Scholar
[12] Gerardin S, Bagatin M, Paccagnella A, Schwank J R, Shaneyfelt M R, Blackmore E W 2012 IEEE Trans. Nucl. Sci. 59 838
Google Scholar
[13] Bagatin M, Gerardin S, Paccagnella A, Ferlet-Cavrois V, Schwank J R, Shaneyfelt M R, Visconti A 2013 IEEE Trans. Nucl. Sci. 60 4130
Google Scholar
[14] Chen D, Wilcox E, Ladbury R L, Kim H, Phan A, Seidleck C, Label K A 2017 IEEE Trans. Nucl. Sci. 64 332
Google Scholar
[15] 彭聪 2020 硕士学位论文 (南京: 南京航空航天大学)
Peng C 2020 M. S. Thesis (Nanjing: Nanjing University of Aeronautics and Astronautics) (in Chinese)
[16] Bagatin M, Gerardin S, Paccagnella A 2012 IEEE Trans. Nucl. Sci. 59 2785
Google Scholar
[17] Bi J S, Xi K, Li B, Wang H, Ji L L, Li J, Liu M 2018 Chinese Phys. B 27 098501
Google Scholar
[18] 殷亚楠 2018 博士学位论文 (北京: 中国科学院大学)
Yin Y N 2018 Ph. D. Dissertation (Beijing: University of Chinese Academy of Sciences) (in Chinese)
[19] Guertin S M, Nguyen D M, Patterson J D 2006 IEEE Trans. Nucl. Sci. 53 3518
Google Scholar
[20] 何安林 2016 博士学位论文 (北京: 中国原子能科学研究院)
He A L 2016 Ph. D. Dissertation (Beijing: China institute of atomic energy) (in Chinese)
[21] Stapor W J, Meyers J P, Langworthy J B, Petersen E L 1990 IEEE Trans. Nucl. Sci. 37 1966
Google Scholar
[22] 赖祖武 1998 抗辐射电子学——辐射效应及加固原理 (北京: 国防工业出版社) 第21页
Lai Z W 1998 Anti-radiation Electronics—Radiation Effects and Hardening Principles (Beijing: National Defense Industry Press) p21 (in Chinese)
[23] Cellere G, Pellati P, Chimenton A, Wyss J, Modelli A, Larcher L, Paccagnella A 2001 IEEE Trans. Nucl. Sci. 48 2222
Google Scholar
[24] Cellere G, Paccagnella A, Visconti A, Bonanomi M, Candelori A 2004 IEEE Trans. Nucl. Sci. 51 3304
Google Scholar
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