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Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica,
doi: 10.7498/aps.72.20230553
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Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica,
doi: 10.7498/aps.72.20230709
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang. Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica,
doi: 10.7498/aps.71.20211536
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Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun. Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions. Acta Physica Sinica,
doi: 10.7498/aps.71.20220628
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Wu Peng, Zhang Tao, Zhang Jin-Cheng, Hao Yue. Investigation of AlGaN/GaN Schottky barrier diodes on free-standing GaN substrate with low leakage current. Acta Physica Sinica,
doi: 10.7498/aps.71.20220161
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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue. Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica,
doi: 10.7498/aps.71.20211917
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Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng. Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica,
doi: 10.7498/aps.70.20201467
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Han Dong, Sun Fei-Yang, Lu Ji-Yuan, Song Fu-Ming, Xu Yue. Reducing dark count of single-photon avalanche diode detector with polysilicon field plate. Acta Physica Sinica,
doi: 10.7498/aps.69.20200523
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Wang Xiang, Chen Lei-Lei, Cao Yan-Rong, Yang Qun-Si, Zhu Pei-Min, Yang Guo-Feng, Wang Fu-Xue, Yan Da-Wei, Gu Xiao-Feng. Physical model of conductive dislocations in GaN Schottky diodes. Acta Physica Sinica,
doi: 10.7498/aps.67.20180762
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
doi: 10.7498/aps.64.107801
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
doi: 10.7498/aps.64.050701
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Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou. Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica,
doi: 10.7498/aps.63.127201
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
doi: 10.7498/aps.60.078503
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Fan Guo-Li, Jiang Yue-Song, Liu Li, Li Fang. Analysis on high frequency performance of THz GaAs Schottky mixer diode. Acta Physica Sinica,
doi: 10.7498/aps.59.5374
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
doi: 10.7498/aps.59.1233
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
doi: 10.7498/aps.58.7189
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
doi: 10.7498/aps.57.5869
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
doi: 10.7498/aps.57.472
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LI HONG-WEI, WANG TAI-HONG. CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica,
doi: 10.7498/aps.50.2038
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LI HONG-WEI, WANG TAI-HONG. CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica,
doi: 10.7498/aps.50.262
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