[1] |
Pan Jia-Ping, Zhang Ye-Wen, Li Jun, Lü Tian-Hua, Zheng Fei-Hu. Migration behavior of space charge packet researched by using electron beam irradiation and real-time space charge distribution measurement in piezo-pressure wave propagation (PWP) method. Acta Physica Sinica,
doi: 10.7498/aps.73.20231353
|
[2] |
Wang Ji-Guang, Li Long-Ling, Qiu Jia-Tu, Chen Xu-Min, Cao Dong-Xing. Tuning two-dimensional electron gas at LaAlO3/KNbO3 interface by strain gradient. Acta Physica Sinica,
doi: 10.7498/aps.72.20230573
|
[3] |
Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi. Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability. Acta Physica Sinica,
doi: 10.7498/aps.71.20211265
|
[4] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
doi: 10.7498/aps.68.20191074
|
[5] |
Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
doi: 10.7498/aps.67.20171827
|
[6] |
Du Yu-Feng, Cui Li-Juan, Li Jin-Sheng, Li Ran-Ran, Wan Fa-Rong. Anomalous heat-releasing phenomenon from bubbles in aluminum induced by electron beam irradiation. Acta Physica Sinica,
doi: 10.7498/aps.67.20181140
|
[7] |
Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie. Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica,
doi: 10.7498/aps.65.104202
|
[8] |
Li Jie, Gao Jin, Wan Fa-Rong. The change of microstructure in deuteron-implanted aluminum under electron irradiation. Acta Physica Sinica,
doi: 10.7498/aps.65.026102
|
[9] |
Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica,
doi: 10.7498/aps.64.154217
|
[10] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
doi: 10.7498/aps.63.080202
|
[11] |
Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min. Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica,
doi: 10.7498/aps.63.070204
|
[12] |
Zhong Mian, Yang Liang, Ren Wei, Xiang Xia, Liu Xiang, Lian You-Yun, Xu Shi-Zhen, Guo De-Cheng, Zheng Wan-Guo, Yuan Xiao-Dong. Optical properties and laser damage performance of SiO2 irradiated by high-power pulsed electron beam. Acta Physica Sinica,
doi: 10.7498/aps.63.246103
|
[13] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
doi: 10.7498/aps.62.150202
|
[14] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao. Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica,
doi: 10.7498/aps.61.237302
|
[15] |
Li Lun-Xiong, Su Jiang-Bin, Wu Yan, Zhu Xian-Fang, Wang Zhan-Guo. New observations for electron beam-induced instability of single-wall carbon nanotube. Acta Physica Sinica,
doi: 10.7498/aps.61.036401
|
[16] |
Fang Xiao-Ming, Yang Qiu-Hong, Guo Xing, Su Liang-Bi, Zhao Heng-Yu, Yu Ping-Sheng, Li Xin-Nian, Xu Jun. Near-infrared broadband emission spectroscopic properties of Bi: α-BaB2O4 single crystal induced by electron irradiation. Acta Physica Sinica,
doi: 10.7498/aps.60.097802
|
[17] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming. The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica,
doi: 10.7498/aps.56.6013
|
[18] |
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica,
doi: 10.7498/aps.56.4955
|
[19] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao. Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica,
doi: 10.7498/aps.55.2044
|
[20] |
Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
doi: 10.7498/aps.55.3677
|