Progress of lead-free perovskite and its resistance switching performance

Zeng Fan-Ju; Tan Yong-Qian; Tang Xiao-Sheng; Zhang Xiao-Mei; Yin Hai-Feng

doi:10.7498/aps.70.20210065

Abstract

With the rapid development of the information age, the demand for information storage capacity and miniaturization of memory units has been being increased. However, the commonly used silicon-based flash memory has nearly approached to its physical limit. The resistive switching random access memory (ReRAM) has become one of the promising candidates for the next-generation non-volatile memory due to its simple structure, fast operation speed, excellent flexibility, and long endurance. Recently, we witnessed that the lead halide perovskites, as hot star materials, have been widely used in optoelectronic fields owning to their advantages of low cost, excellent photoelectric properties, and solution process ability. Moreover, the lead halide perovskite has been successfully used as the active layer in ReRAM device because of its tunable bandgap, long charge carrier diffusion length, fast ion migration, and high charge carrier mobility. Whereas the toxicity of lead in halide perovskite is a very horrible problem in lead halide perovskite-based ReRAM devices. The lead-free halide perovskite is considered to be the most promising material for perovskite-based ReRAM devices because it does not contain lead element. Most recently, a large number of scientists from different groups have begun to study lead-free perovskite-based ReRAM devices. For example, tin, bismuth, antimony, and copper-based halide perovskite materials have been utilized in ReRAM devices and exhibited excellent resistance switching (RS) performances. Here in this paper, the recent development of lead-free perovskite and its RS performance are reviewed, including lead-free halide perovskite materials, RS performances, and RS mechanisms of lead-free perovskite-based ReRAM. Finally, the key problems and development prospects of lead-free perovskite-based ReRAM are also presented, which provides a fundamental step towards developing the RS performance based on lead-free halide perovskites.

Keywords:

Authors and contacts

1.
School of Big Data Engineering, Kaili University, Kaili 556011, China
2.
College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Corresponding author: Zeng Fan-Ju, zengfanju@cqu.edu.cn ; Tang Xiao-Sheng, xstang@cqu.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61975023, 61875211, 51602033, 61520106012), the Doctoral Project of Kaili University, China (Grant Nos. BS202004, BS201301), the Academic New Seedling Cultivation and Innovation Exploration Special Project of Kaili University, China (Grant No. Qian Ke He Ping Tai Ren Cai [2019]01-4), and the Major Research Projects of Innovative Groups in Education Department of Guizhou Province of China (Grant No. Qian Jiao He KY[2018]035)

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References

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Cited By

图 1 卤素钙钛矿分子结构式ABX₃ (A: 绿球, 代表正价金属离子或有机官能团. B: 蓝球, 代表金属阳离子. X: 红球, 代表卤素阴离子)^[45]

Figure 1. Crystal structure of trihalide perovskite with a chemical structure of ABX₃, where A is the organic cation or metal cation (green), B is the metal cation (blue), and X is the halide anion (red)^[45].

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图 2 CsSnBr₃非铅钙钛矿材料阻变性能　(a) Pt/CsSnBr₃/Pt/PET阻变存储器结构示意图; (b)电流-电压(I-V )特性曲线; (c)耐受性^[48]

Figure 2. Resistive switching performance of CsSnBr₃ lead-free halide perovskite: (a) Schematic of Pt/CsSnBr₃/Pt/PET resistive switching device; (b) typical current-voltage (I-V ) curve; (c) endurance performance^[48].

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图 3 CsSnI₃非铅钙钛矿材料及其阻变性能　(a) CsSnI₃晶体结构; (b)阻变存储器结构; (c)器件的截面SEM图; Ag/CsSnI₃/Pt/Ti/SiO₂/Si器件的(d) I-V特性曲线、(e)耐受性和(f)高低阻态保持特性; Au/CsSnI₃/Pt/Ti/SiO₂/Si器件的(g) I-V特性曲线、(h)耐受性和(i) 50个不同元器件高低阻态^[49]

Figure 3. Resistive switching performance of CsSnI₃ lead-free perovskite: (a) CsSnI₃ crystal structure; (b) schematic of the Ag or Au/PMMA/CsSnI₃/Pt/SiO₂/Si vertical stack structure; (c) cross-sectional SEM image of the device; (d) the typical I-V curves, (e) endurance performance, and (f) retention characteristics of low resistances state (LRS) and high resistance state (HRS) of the Ag/PMMA/CsSnI₃/Pt devices; (g) the typical I-V curves, (h) endurance performance, and (i) HRS and LRS of 50 different cells of the Au/PMMA/CsSnI₃/Pt devices^[49].

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图 4 (a) CsGeI₃, (b) MAGeI₃和(c) FAGeI₃的表面扫描电子显微镜(SEM)图谱^[50]

Figure 4. Scanning electron microscope (SEM) images of (a) CsGeI₃, (b) MAGeI₃, and (c) FAGeI₃ films^[50].

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图 5 铋基非铅卤素钙钛矿晶体结构　(a) Rb₃Bi₂I₉^[52]; (b) Cs₃Bi₂I₉^[52]; (c) CsBi₃I₁₀^[53]

Figure 5. Crystal structure of Bi-based perovskite: (a) Rb₃Bi₂I₉^[52]; (b) Cs₃Bi₂I₉^[52]; (c) CsBi₃I₁₀^[53].

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图 6 铋基非铅卤素钙钛矿阻变存储器　(a) Au/A₃Bi₂I₉/Pt/Ti/SiO₂/Si器件结构示意图; (b) Rb₃Bi₂I₉阻变存储器截面SEM图; (c) Cs₃Bi₂I₉阻变存储器截面SEM图; Rb₃Bi₂I₉阻变存储器的(d) I-V特性曲线、(e)耐受性和(f)保持特性; Cs₃Bi₂I₉阻变存储器的(g) I-V特性曲线、(h)耐受性和(i)保持特性^[52]

Figure 6. The Bi-based perovskite resistance random access memory (ReRAM) devices: (a) Schematic of Au/A₃Bi₂I₉/Pt/Ti/SiO₂/Si based ReRAM devices; (b) the cross-section SEM image of Rb₃Bi₂I₉ based ReRAM device; (c) the cross-section SEM image of Cs₃Bi₂I₉ based ReRAM device; (d) the typical I-V curve, (e) endurance, and (f) retention of Rb₃Bi₂I₉ based ReRAM; (g) the typical I-V curve, (h) endurance, and (i) retention of Cs₃Bi₂I₉ based ReRAM^[52].

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图 7 Al/CsBi₃I₁₀/ITO阻变存储器　(a)阻变存储器结构; (b)稳定性; (c)保持特性; (d)耐受性^[54]

Figure 7. Al/CsBi₃I₁₀/ITO ReRAM device^[54]: (a) Schematic; (b) stability; (c) retention; (d) endurance.

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图 8 (a) Cs₂AgBi₂Br₆的晶体结构; (b) Au/Cs₂AgBi₂Br₆/ITO阻变存储器的截面SEM; (c)循环耐受性^[55]

Figure 8. (a) Crystal structure of Cs₂AgBi₂Br₆; (b) the cross-section SEM image and (c) the cycle endurance characteristics of Au/Cs₂AgBi₂Br₆/ITO ReRAM^[55].

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图 9 Au/Cs₂AgBi₂Br₆/ITO 器件在不同恶劣环境下的I-V特性曲线　(a)相对湿度(RH) 10%—80%; (b)温度范围为303—453 K; (c)酒精灯外焰加热10 s; (d)在⁶⁰Co射线照射下曝露, 总剂量高达5 × 10⁵ rad(SI)^[55]

Figure 9. I-V characteristics of Au/Cs₂AgBi₂Br₆/ITO device in different harsh environments: (a) 10%—80% relative humidity; (b) temperature range from 303 to 453 K; (c) burnt by luminous cone of alcohol lamp for 10 s; (d) exposed under ⁶⁰Co γ-ray irradiation with a total dose as high as 5 × 10⁵ rad (SI)^[55].

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图 10 (a) Ag/PMMA/MA₃Sb₂Br₉/ITO阻变存储器结构示意图; (b) MA₃Sb₂Br₉晶体结构; (c) MA₃Sb₂Br₉薄膜截面SEM图; MA₃Sb₂Br₉基阻变存储器的(d) I-V特性曲线、(e)耐久性和(f)保持时间; (g)依赖于连续脉冲的长期增强(LTP)和长期抑制(LTD)现象; (h)突触前和突触后突峰(用于模拟突峰时间依赖性可塑性(STDP)); (i) STDP行为^[58]

Figure 10. (a) Schematic device structure of Ag/PMMA/MA₃Sb₂Br₉/ITO ReRAM; (b) crystal structure of MA₃Sb₂Br₉; (c) cross-sectional SEM image; (d) I-V characteristics, (e) endurance, and (f) retention time of MA₃Sb₂Br₉ based memristors; (g) long-term potentiation (LTP) and long-term depression (LTD) depending on consecutive pulses; (h) presynaptic and postsynaptic spikes for emulating spike timing dependent plasticity (STDP); (i) STDP behavior of an MA₃Sb₂Br₉ memristor^[58].

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图 11 (a) Cs₃Cu₂I₅非铅钙钛矿晶体结构; Cs₃Cu₂I₅阻变存储器的(b)垂直结构示意图和(c)循环测试; (d)模拟神经突触示意图; (e)线性增强和线性抑制; (f)美国国家标准技术研究院数据库(MNIST)训练数据识别精度^[65]

Figure 11. (a) Cs₃Cu₂I₅ crystal structure; (b) vertical stack structure schematic and (c) cycle tests of the Ag/PMMA/Cs₃Cu₂I₅/ITO memristor; (d) schematic of synapses; (e) linear potentiation and depression; (f) successful recognition accuracy monitored while training the data set from Modified National Institute of Standards and Technology (MNIST)^[65].

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图 12 (a) ECM机理; (b) VCM机理; (c)导电细丝在存储介质层的形成和断裂示意图

Figure 12. (a) ECM switching mechanism; (b) VCM switching mechanism; (c) the schematic illustration of filament formation and rupture in the switching layer.

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图 13 (a) Au/PMMA/CsSnI₃/Pt器件界面型机理示意图^[49]; (b)电场作用下, p型钙钛矿层中锡空位的积累引起的耗尽宽度变化^[49]; (c)界面型机理示意图

Figure 13. (a) Schematic of the interface-type switching mechanism in the Au/PMMA/CsSnI₃/Pt device^[49]; (b) depletion width variation in the p-type perovskite layer according to the accumulation of Sn vacancies under an electric field^[49]; (c) the schematic illustration of interface-type switching mechanism in the switching layer

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表 1 基于非铅卤素钙钛矿的阻变存储器的阻变性能

Table 1. Resistive switching performance of resistive switching memory parameters based on lead-free halide perovskites.

器件结构	设置/重置电压/V	开/关比	耐受性/次	保持特性/s
Pt/CsSnBr₃/Pt/PET^[48]	0.2/–0.15	10⁵	50	10⁴
Ag/PMMA/CsSnI₃/Pt/Ti/SiO₂/Si^[49]	0.15/–0.3	10⁴	600	7 × 10³
Au/Cs₃Bi₂I₉/Pt/Ti/SiO₂/Si^[52]	–0.5/0.1	10⁷	400	10³
Au/Rb₃Bi₂I₉/Pt/Ti/SiO₂/Si^[52]	–0.5/0.09	10⁷	100	10³
Al/CsBi₃I₁₀/ITO^[54]	–1.7/0.9	10³	100	10⁴
Au/Cs₂AgBiBr₆/ITO^[55]	–3.4/2	10²	10³	10⁵
Au/Cs₃Bi₂I₉/ITO^[66]	–0.5/0.3	10²	10³	10⁴
Ag/PMMA/MA₃Sb₂Br₉/ITO^[58]	2.5/–0.5	10²	300	10⁴
Ag/PMMA/Cs₃Cu₂I₅/ITO^[65]	–1/0.75	10²	100	10⁴

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[1]	Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13 Google Scholar
[2]	Choi S, Shin J H, Lee J, Sheridan P, Lu W. D 2017 Nano Lett. 17 3113 Google Scholar
[3]	Zidan M A, Strachan J P, Lu W D 2018 Nat. Electron. 1 22 Google Scholar
[4]	Mao D, Mejia I, Salas-Villasenor A L, Singh M, Stiegler H, Gnade B E, Quevedo-Lopez M A 2013 Org. Electron. 14 505 Google Scholar
[5]	Jinnai B, Zhang C, Kurenkov A, Bersweiler M, Sato H, Fukami S, Ohno H 2017 Appl. Phys. Lett. 111 102402 Google Scholar
[6]	Zhou J, Ji H K, Lan T, Yan J W, Zhou W L, Miao X S. 2016 J. Electron. Mater. 44 235 Google Scholar
[7]	Chen Y Q, Liu X, Liu Y, Peng C, Fang W X, En Y F, Huang Y 2017 Appl. Phys. Lett. 111 232104 Google Scholar
[8]	Pan F, Gao S, Chen C, Song C, Zeng F 2014 Mat. Sci. Eng. R. 83 1 Google Scholar
[9]	Lanza M, Wong H S P, Pop E, et al. 2019 Adv. Electron. Mater. 5 1800143 Google Scholar
[10]	Jang J, Choi H H, Paik S H, Kim J K, Chung S, Park J H 2018 Adv. Electron. Mater. 4 1800355 Google Scholar
[11]	Duan W, Rao C, Wang X, Pei Y Mater. 2018 Res. Express 6 016413 Google Scholar
[12]	Lee M J, Lee C B, Lee D, et al. 2011 Nat. Mater. 10 625 Google Scholar
[13]	Yang J J, Pickett M D, Li X, Ohlber g D A, Stewart D R, Williams R S 2008 Nat. Nanotechnol. 3 429 Google Scholar
[14]	Ng W H, Mehonic A, Buckwell M, Montesi L, Kenyon A J 2018 IEEE Trans. Nanotechnol. 17 884 Google Scholar
[15]	Song Y, Jang J, Yoo D, Jung S H, Hong S, Lee J K, Lee T 2015 Org. Electron. 17 192 Google Scholar
[16]	Busby Y, Crespo-Monteiro N, Girleanu M, Brinkmann M, Ersen O, Pireaux J J 2015 Org. Electron. 16 40 Google Scholar
[17]	You Y, Yang K, Yuan S, Dong S, Zhang H, Huang Q, Gillin W P, Zhan Y, Zheng L 2014 Org. Electron. 15 1983 Google Scholar
[18]	Suga T, Sakata M, Aoki K, Nishide H 2014 ACS Macro Lett. 3 703 Google Scholar
[19]	Lee H S, Kang K M, Han W J, Lee T W, Park C S, Choi Y J, Park H H 2014 Appl. Mech. Mater. 597 184 Google Scholar
[20]	Nili H, Walia S, Balendhran S, Strukov D B, Bhaskaran M, Sriram S 2014 Adv. Funct. Mater. 24 6741 Google Scholar
[21]	Li S, Zeng H Z, Zhang S Y, Wei X H 2013 Appl. Phys. Lett. 102 153506 Google Scholar
[22]	Cui Y, Peng H, Wu S, Wang R, Wu T 2013 ACS Appl. Mater. Inter. 5 1213 Google Scholar
[23]	Ielmini D 2016 Semicond. Sci. Technol. 6 063002 Google Scholar
[24]	Liu X, Ji Z, Liu M, Shang L, Li D, Dai Y 2011 Chin. Sci. Bull. 56 3178 Google Scholar
[25]	Panda D, Tseng T Y 2014 Ferroelectrics 471 23 Google Scholar
[26]	Wehrenfennig C, Eperon G E, Johnston M B, Snaith H J, Herz L M 2014 Adv. Mater. 26 1584 Google Scholar
[27]	Kojima A, Teshima K, Shirai Y, Miyasaka T 2009 J. Am. Chem. Soc. 131 6050 Google Scholar
[28]	Eames C, Frost J M, Barnes P R, O'Regan B C 2015 Nat. Commun. 6 7497 Google Scholar
[29]	Leguy A M, Frost J M, McMahon A P, Sakai V G, Kochelmann W, Law C, Li X, Foglia F 2015 Nat. Commun. 6 7124 Google Scholar
[30]	Shi D, Adinolfi V, Comin R, Yuan M J, Alarousu E, Buin A, Chen Y, Hoogland S 2015 Science 347 519 Google Scholar
[31]	Green M A, Ho-Baillie A, Snaith H J 2014 Nat. Photon. 8 506 Google Scholar
[32]	Chin X Y, Perumal A, Bruno A, et al. 2018 Energ. Environ. Sci. 11 1770 Google Scholar
[33]	Kagan C R, Mitzi D B, Dimitrakopoulos C D 1999 Science 286 945 Google Scholar
[34]	Choi E S, Yang J M, Kim S G, Cuhadar C, Kim S Y, Kim S H, Lee D, Park N G 2019 Nanoscale 11 14455 Google Scholar
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