Effect of ion dose ratio on multilevel energy smoothing model of gas cluster

Luo Jin-Bao; Vasiliy Pelenovich; Zeng Xiao-Mei; Hao Zhong-Hua; Zhang Xiang-Yu; Zuo Wen-Bin; Fu De-Jun

doi:10.7498/aps.70.20202011

Abstract

In this study, two kinds of gas cluster ion beam energy modes with different ion dose ratios are proposed to improve the traumatic surface of n-Si (100) single crystal. In mode1, low-dose high-energy clusters and high-dose low-energy clusters are used, while in mode2, high-dose high-energy clusters and low-dose low-energy clusters are used. The results show that the flattening effect of mode 1 is better than that of mode 2, and the root mean square roughness of mode 1 and mode 2 are 0.62 nm and 1.02 nm, respectively. This is because in multi-level energy mode 2, high-dose high-energy clusters are used to bombard the target surface in the early stage, so that more ion damages will be left after high-energy cluster bombardment. In the later stage, low-dose low-energy clusters can only remove part of the ion damages, and the repair strength is not strong enough. In multi-level energy mode1, we first use low-dose high-energy clusters to bombard the surface of the target, so that the high-energy clusters can quickly remove the shape objects with high protrusion on the sample surface, and in the low-dose mode, it will not leave too many ion damages, which is conducive to the later repair. In the first stage of multi-level energy mode, high-dose low-energy clusters are used to bombard the target surface, which can not only reduce the ion loss, but also increase the time for low-energy clusters to repair ion damages, thereby yielding the optimal flattening effect. In order to verify the relationship among the damage removal, ion damage degree and cluster energy, a single energy cluster bombardment experiment with mechanical damage is carried out before the multi-level energy mode modification is studied. The results show that when the cluster ions are accelerated at 15 kV high voltage, the scratch removal efficiency is highest, and the surface scratch is very shallow, but the decease of roughness is not obvious; when the cluster ions are accelerated at 8 kV and 5 kV, the sample surface becomes fine and the remaining ion damages are least. At the same time, a comparison of the target bombarded by the multi-level energy mode 1 clusters with that by the single energy clusters shows that the multi-level energy mode can obtain a smoother target surface than the single 15 keV high-energy cluster treatment; the multi-level energy mode can better remove scratches and other wounds than the single 5 keV low-energy cluster treatment. Multistage energy mode 1 integrates the advantages of high and low energy clusters, thereby achieving the best flattening effect.

Keywords:

Authors and contacts

1.
School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
2.
School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China

Corresponding author: Vasiliy Pelenovich, pelenovich@mail.ru ; Zeng Xiao-Mei, 1714399588@qq.com ; Hao Zhong-Hua, zhhao@whu.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11875210, U1832127), the Science and Technology Planning Project of Guangdong Province (Grant Nos. 2018A050506082, 2020A1515011531, 2020A1515011451).

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References

[1]	Matsuo J, Katsumata H, Minami E, Yamada I 2000 Nucl. Instrum. Methods B 161-163 952 Google Scholar
[2]	Goto K, Matsuo J, Tada Y, Momiyama Y, Sugii T, Yamada I 1997 IEDM Tech. Digst. 471 Google Scholar
[3]	Toyoda N, Hagiwara N, Matsuo J, Yamada I 1999 Nucl. Instrum. MethodsB 148 639 Google Scholar
[4]	Yamada I, Takaoka G H 1993 Jpn. J. Appl. Phys. 32 2121 Google Scholar
[5]	Qin W, Howson R P, Akizuki M, Matsuo J, Takaoka G, Yamada I 1998 Mater. Chem. Phys. 54 258 Google Scholar
[6]	Seki T, Matsuo J, Yamada I 2000 Nucl. Instrum. Methods B 161–163 1007
[7]	Tembrello. T A 1995 Nucl. Instrum. Methods B 99 225 Google Scholar
[8]	Sang J L, Chang M C, Boo K M, Ji Y B, Jae Y E, Myoung C C 2019 Bull. Korean Chem. Soc. 40 877 Google Scholar
[9]	Ieshkin A, Nazarev A, Tatarintsev A, Kireev D 2020 Mater. Lett. 272 127829 Google Scholar
[10]	Sumie K, Toyoda N, Yamada I 2013 Nucl. Instrum. MethodsB 307 290 Google Scholar
[11]	Zeng X M, Pelenovich V, Ieshkin A 2019 Rapid Commun. Mass. Spectrom. 33 1449 Google Scholar
[12]	Pelenovich V, Zeng X M, Rakhimov R, Zuo W B 2020 Mater. Lett. 264 127356 Google Scholar
[13]	Zeng X M, Pelenovich V, Zuo W B, Xing B, Tolstogouzov A 2020 Beilstein J. Nanotechnol. 11 383 Google Scholar
[14]	Yamada I, Matsuo J, Insepov Z, Akizuki M 1995 Nucl. Instrum. Methods B 106 165 Google Scholar
[15]	Yamada I, Matsuo J, Toyoda N, Kirkpatrick A 2001 Mater. Sci. Eng. R 34 231 Google Scholar
[16]	Prasalovich S, Popok V, Persson P, Campbell E E B 2005 J. Eur. Phys. D 36 79 Google Scholar
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[18]	Tolstoguzov A B, Drozdov M N, Ieshkin A E, Tatarintsev A A, Myakon’kikh A V, Belykh S F, Korobeishchiko, N G, Pelenovich V 2020 JETP Letters. 111 467 Google Scholar
[19]	Merkle K J, Jager W 1981 Philos. Mag. A 44 741 Google Scholar
[20]	Gapann J 1995 Sensor Actuator. A 51 37 Google Scholar
[21]	Takeuchi D, Seki T, Aoki T, Matsuo J, Yamada I 1998 Mater. Chem. Phys. 54 76 Google Scholar
[22]	Matsuo J, Seki T, Yamada I 2003 Nucl. Instrum. Methods B 206 838 Google Scholar
[23]	Allen L P, Insepov Z, Fenner D B, Santeufemio, Brooks C W, Jones K S, Yamada I 2002 J. Appl. Phys. 92 3671 Google Scholar
[24]	Momota S, NojiIi Y 2006 Nucl. Instrum. Methods B 242 247 Google Scholar
[25]	Seki T, Kaneko T, Takeuchi D, Aoki T, Matsuo J, Insepov Z, Yamada I 1997 Nucl. Instrum. Methods B 121 498 Google Scholar
[26]	Pelenovich V, Zeng X M, Ieshkin A, Chernysh V S, Tolstogouzov A B 2019 J. Surf. Invest. 13 344 Google Scholar
[27]	VasiliyPelenovich, 曾晓梅, 罗进宝, RakhimRakhimov, 左文彬, 张翔宇, 田灿鑫, 邹长伟, 付德君, 杨兵 2021 70 053601 Google Scholar Pelenovich V, Zeng X M, Luo J B, Rakhimov R, Zuo W B, Zhang X Y, Tian C X, Zhou C W, Fu D J, Yang B 2021 Acta Phys. Sin. 70 053601 Google Scholar
[28]	Zeng X M, Pelenovich V, Liu C S, FuD J 2017 Chin. Phys. C 41 087003 Google Scholar
[29]	Zeng X M, Pelenovich V, Zuo W B 2019 Beilstein J. Nanotechnol. 10 135 Google Scholar

Cited By

图 1 Si片经不同单一能量的Ar团簇垂直辐照前后的AFM表面形貌图　(a) 0 keV (initial); (b) 15 keV; (c) 8 keV; (d) 5 keV

Figure 1. AFM images of Si surface before and after Ar cluster bombardment at different single energies: (a) 0 keV (initial surface); (b) 15 keV; (c) 8 keV; (d) 5 keV.

DownLoad: Full-Size Img PowerPoint

图 2 Si片经两种不同模式的Ar团簇垂直辐照后的AFM表面形貌图　(a) 0 keV (初始); (b) 15 keV + 8 keV + 5 keV多级能量(其离子剂量均为2 × 10¹⁶ cm^–2); (c) 15 keV + 8 keV + 5 keV多级能量(其离子剂量分别为3 × 10¹⁶, 2 × 10¹⁶, 1 × 10¹⁶ cm^–2)

Figure 2. AFM images of mechanically polished Si surface irradiated by two different modes of Ar cluster bombardment: (a) Initial surface; (b) 15 keV + 8 keV + 5 keV, consequently (all ion doses are 2 × 10¹⁶ cm^–2); (c) 15 keV + 8 keV + 5 keV, consequently (ion doses respectively are 3 × 10¹⁶, 2 × 10¹⁶, 1 × 10¹⁶ cm^–2)

DownLoad: Full-Size Img PowerPoint

图 3 两种不同模式下, Ar团簇垂直辐照Si片后的PSD曲线

Figure 3. PSD curves of Ar clusters after vertical irradiation of Si wafer under two different modes

DownLoad: Full-Size Img PowerPoint

图 4 Si片经不同能量的Ar团簇垂直辐照后的AFM表面形貌图　(a) 15 keV; (b) 5 keV; (c) 15 keV + 8 keV + 5 keV (离子剂量均为 2 × 10¹⁶ cm^–2); (d) 15 keV + 8 keV + 5 keV (离子剂量分别为 3 × 10¹⁶, 2 × 10¹⁶、1 × 10¹⁶ cm^–2); (e) 图(a)中孔洞的截面轮廓图; (f) 图(b)中孔洞的截面轮廓图; (g) 图(c)中孔洞的截面轮廓图; (h) 图(d)中孔洞的截面轮廓图

Figure 4. AFM images of mechanically polished Si surface after Ar cluster bombardment with different energy: (a) 15 keV; (b) 5 keV; (c) 15 keV + 8 keV + 5 keV, consequently (all ion doses are 2 × 10¹⁶ cm^–2); (d) 15 keV + 8 keV + 5 keV, consequently (ion doses respectively are 3 × 10¹⁶, 2 × 10¹⁶, 1 × 10¹⁶ cm^–2); (e) cross section of a crater from (a); (f) cross section of a crater from (b); (g) cross section of a crater from (c); (h) cross section of a crater from (d).

DownLoad: Full-Size Img PowerPoint

表 1 Si片样品的平坦化参数(团簇能量、离子剂量、抛光时间)和平坦化结果(均方根表面粗糙度R_q)

Table 1. The smoothing parameters (cluster energy, ion dose, smoothing time) and root mean square roughness R_q.

团簇能量
/keV 离子剂量
/(ions·cm^-2) 抛光时间
/min 均方根粗
糙度/nm

0 0 0 1.69
15 6 × 10¹⁶ 10 1.64
8 6 × 10¹⁶ 20 1.07
5 6 × 10¹⁶ 25 1.10

DownLoad: CSV

表 2 Si片样品的平坦化参数(团簇能量、离子剂量、抛光时间)和平坦化结果(均方根表面粗糙度R_q)

Table 2. The smoothing parameters (cluster energy, ion dose, smoothing time) and root mean square roughness R_q.

团簇能量/keV 离子剂量/(ions·cm^–2) 抛光时间/min 均方根粗糙度/nm

0 0 0 1.69
15 + 8 + 5 2 × 10¹⁶ + 2 × 10¹⁶ + 2 × 10¹⁶ 3 + 6 + 8 0.62
15 + 8 + 5 3 × 10¹⁶ + 2 × 10¹⁶+1 × 10¹⁶ 5 + 6 + 4 1.02

DownLoad: CSV

map

[1]	Matsuo J, Katsumata H, Minami E, Yamada I 2000 Nucl. Instrum. Methods B 161-163 952 Google Scholar
[2]	Goto K, Matsuo J, Tada Y, Momiyama Y, Sugii T, Yamada I 1997 IEDM Tech. Digst. 471 Google Scholar
[3]	Toyoda N, Hagiwara N, Matsuo J, Yamada I 1999 Nucl. Instrum. MethodsB 148 639 Google Scholar
[4]	Yamada I, Takaoka G H 1993 Jpn. J. Appl. Phys. 32 2121 Google Scholar
[5]	Qin W, Howson R P, Akizuki M, Matsuo J, Takaoka G, Yamada I 1998 Mater. Chem. Phys. 54 258 Google Scholar
[6]	Seki T, Matsuo J, Yamada I 2000 Nucl. Instrum. Methods B 161–163 1007
[7]	Tembrello. T A 1995 Nucl. Instrum. Methods B 99 225 Google Scholar
[8]	Sang J L, Chang M C, Boo K M, Ji Y B, Jae Y E, Myoung C C 2019 Bull. Korean Chem. Soc. 40 877 Google Scholar
[9]	Ieshkin A, Nazarev A, Tatarintsev A, Kireev D 2020 Mater. Lett. 272 127829 Google Scholar
[10]	Sumie K, Toyoda N, Yamada I 2013 Nucl. Instrum. MethodsB 307 290 Google Scholar
[11]	Zeng X M, Pelenovich V, Ieshkin A 2019 Rapid Commun. Mass. Spectrom. 33 1449 Google Scholar
[12]	Pelenovich V, Zeng X M, Rakhimov R, Zuo W B 2020 Mater. Lett. 264 127356 Google Scholar
[13]	Zeng X M, Pelenovich V, Zuo W B, Xing B, Tolstogouzov A 2020 Beilstein J. Nanotechnol. 11 383 Google Scholar
[14]	Yamada I, Matsuo J, Insepov Z, Akizuki M 1995 Nucl. Instrum. Methods B 106 165 Google Scholar
[15]	Yamada I, Matsuo J, Toyoda N, Kirkpatrick A 2001 Mater. Sci. Eng. R 34 231 Google Scholar
[16]	Prasalovich S, Popok V, Persson P, Campbell E E B 2005 J. Eur. Phys. D 36 79 Google Scholar
[17]	曾晓梅, Vasiliy Pelenovich, Rakhim Rakhimov, 左文彬, 邢斌, 罗进宝, 张翔宇, 付德君 2020 69 093601 Google Scholar Zeng X M, Pelenovich V, Rakhimov R, Zuo W B, Xing B, Luo J B, Zhang X Y, Fu D J 2020 Acta Phys. Sin. 69 093601 Google Scholar
[18]	Tolstoguzov A B, Drozdov M N, Ieshkin A E, Tatarintsev A A, Myakon’kikh A V, Belykh S F, Korobeishchiko, N G, Pelenovich V 2020 JETP Letters. 111 467 Google Scholar
[19]	Merkle K J, Jager W 1981 Philos. Mag. A 44 741 Google Scholar
[20]	Gapann J 1995 Sensor Actuator. A 51 37 Google Scholar
[21]	Takeuchi D, Seki T, Aoki T, Matsuo J, Yamada I 1998 Mater. Chem. Phys. 54 76 Google Scholar
[22]	Matsuo J, Seki T, Yamada I 2003 Nucl. Instrum. Methods B 206 838 Google Scholar
[23]	Allen L P, Insepov Z, Fenner D B, Santeufemio, Brooks C W, Jones K S, Yamada I 2002 J. Appl. Phys. 92 3671 Google Scholar
[24]	Momota S, NojiIi Y 2006 Nucl. Instrum. Methods B 242 247 Google Scholar
[25]	Seki T, Kaneko T, Takeuchi D, Aoki T, Matsuo J, Insepov Z, Yamada I 1997 Nucl. Instrum. Methods B 121 498 Google Scholar
[26]	Pelenovich V, Zeng X M, Ieshkin A, Chernysh V S, Tolstogouzov A B 2019 J. Surf. Invest. 13 344 Google Scholar
[27]	VasiliyPelenovich, 曾晓梅, 罗进宝, RakhimRakhimov, 左文彬, 张翔宇, 田灿鑫, 邹长伟, 付德君, 杨兵 2021 70 053601 Google Scholar Pelenovich V, Zeng X M, Luo J B, Rakhimov R, Zuo W B, Zhang X Y, Tian C X, Zhou C W, Fu D J, Yang B 2021 Acta Phys. Sin. 70 053601 Google Scholar
[28]	Zeng X M, Pelenovich V, Liu C S, FuD J 2017 Chin. Phys. C 41 087003 Google Scholar
[29]	Zeng X M, Pelenovich V, Zuo W B 2019 Beilstein J. Nanotechnol. 10 135 Google Scholar

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