Crystal structure and optical properties of GaAs nanowires

Wang Peng-Hua; Tang Ji-Long; Kang Yu-Bin; Fang Xuan; Fang Dan; Wang Deng-Kui; Lin Feng-Yuan; Wang Xiao-Hua; Wei Zhi-Peng

doi:10.7498/aps.68.20182116

Abstract

Gallium arsenide (GaAs) nanowires are epitaxially grown on an N-type Si (111) substrate by molecular beam epitaxy according to self-catalysis growth mechanism. Testing the grown nanowires by scanning electron microscope, it is found that the nanowires have high verticality and good uniformity in length and diameter. Variable temperature photoluminescence (PL) spectroscopy is used on nanowires. The test results show that the two luminescence peaks P1 and P2 at 10 K are located at 1.493 eV and 1.516 eV, respectively, and it is inferred that it may be the luminescence caused by WZ/ZB miscible structure and the free exciton luminescence peak. These two peaks present red-shift with temperature increasing. The temperature change curve is obtained by fitting the Varshni formula. The variable power PL spectroscopy test finds that the peak position of P1 position is blue shifted with power increasing, but the peak position of the P2 remains unchanged. By fitting, it is found that the P1 peak position is linearly related to power to the power of 1/3, and it is judged that it may be type-II luminescence caused by WZ/ZB mixed phase structure. At the same time, the peak position of the P2 position is fitted and parameter α approximately equals 1.56, therefore P2 is a free exciton luminescence. A Raman spectrum test is performed on the nanowires, and an E₂ phonon peak unique to the GaAs WZ structure is found from the spectrum. It is proved that the grown nanowires possess WZ/ZB mixed phase structures, and the hybrid phase structure of nanowires is more intuitively observed by high resolution transmission electron microscopy.

Keywords:

GaAs nanowires /
wurtzite/zincblende mixed phase structure /
photoluminescence spectra /
Raman spectra

Authors and contacts

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

Corresponding author: Tang Ji-Long, jl_tangcust@163.com

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11674038, 61704011, 61674021, 61574022), the Science and Technology Development Plan of Jilin Province, China (Grant Nos. 20160204074GX, 20160519007JH, 20160101255JC), and the Science and Technology Innovation Fund of Changchun University of Science and Technology, China (Grant Nos. XJJLG-2016-11, XJJLG-2016-14).

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References

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Cited By

图 1 GaAs纳米线形貌及纳米线长度直径分布　(a) GaAs纳米线侧面SEM图像; (b) GaAs纳米线长度分布统计图; (c) GaAs纳米线平面SEM图像, 插图为纳米线形状; (d) GaAs纳米线直径分布统计图

Figure 1. The morphology, length, and diameter distribution of GaAs nanowires: (a) Side SEM image of GaAs nanowires; (b) GaAs nanowires length distribution; (c) plane SEM image of GaAs nanowires, inset is the shape of the nanowire; (d) GaAs nanowires diameter distribution

DownLoad: Full-Size Img PowerPoint

图 2 GaAs纳米线变温PL光谱测试图　(a)发光峰位随温度10−140 K的变化; (b) P1, P2发光峰峰位随温度变化的拟合曲线

Figure 2. Variable power PL spectrum: (a) The change of luminescence peak position with temperature 10−140 K; (b) fitting curve of the peak position of P1 and P2 luminescence with the change of temperature

DownLoad: Full-Size Img PowerPoint

图 3 变功率PL光谱测试图　(a)不同功率下PL光谱曲线, 插图为P2, P1峰强比随功率变化曲线; (b) P1峰位与P^1/3的关系; (c) P2峰强与功率的关系

Figure 3. Variable power PL spectrum: (a) The PL spectral curve with different power is illustrated as the peak ratio of P2, P1 changing with power; (b) the relationship between P1 peak and P^1/3; (c) the relationship between P2 peak intensity and power

DownLoad: Full-Size Img PowerPoint

图 4 GaAs纳米线及GaAs衬底的Raman光谱图

Figure 4. Raman spectra of GaAs nanowires and GaAs substrate

DownLoad: Full-Size Img PowerPoint

图 5 GaAs纳米线透射电子显微镜(TEM)图像　(a)低分辨TEM图像; (b)HRTEM图像; (c)为选区电子衍射图像

Figure 5. Transmission electron microscopy (TEM) image of GaAs nanowires: (a) The low resolution TEM; (b) the high resolution TEM; (c) the selected area electron diffraction image

DownLoad: Full-Size Img PowerPoint

map

[1]	Dai X, Zhang S, Wang Z L, Adamo G, Liu H, Huang Y Z, Couteau C, Soci C 2014 Nano Lett. 14 2688 Google Scholar
[2]	Farrell A C, Senanayake P, Meng X, Hsieh N Y, Huffaker D L 2017 Nano Lett. 17 2420 Google Scholar
[3]	Cammi D, Rodiek B, Zimmermann K, Kück S, Voss T 2017 J. Mater. Res. 32 2464 Google Scholar
[4]	Tchernycheva M, Lavenus P, Zhang H, Babichev A V, Jacopin G, Shahmohammadi M, Julien F H, Ciechonski R, Vescovi G, Kryliouk O 2014 Nano Lett. 14 2456 Google Scholar
[5]	Hussain L, Karimi M, Berg A, Jain V, Borgström M T, Gustafsson A, Samuelson L, Pettersson H 2017 Nanotechnology 28 485205 Google Scholar
[6]	Ullah A R, Meyer F, Gluschke J G, Naureen S, Caroff P, Krogstrup P, Nygård J, Micolich A P 2018 Nano Lett. 18 5673 Google Scholar
[7]	Price A, Martinez A 2015 J. Appl. Phys. 117 164501 Google Scholar
[8]	Yang W, Pan D, Shen R, Wang X, Zhao J, Chen Q 2018 Nanotechnology 29 415230
[9]	毛宏伟, 刘一先, 李富铭 1990 中国激光 17 538 Google Scholar Mao H W, Liu Y X, Li F M 1990 Chin. J. Las. 17 538 Google Scholar
[10]	Han N, Wang F, Hou J J, Yip S, Lin H, Fang M, Xiu F, Shi X L, Hung T F, Ho J C 2012 Cryst. Growth Des. 12 6243 Google Scholar
[11]	夏宁, 方铉, 容天宇, 王登魁, 房丹, 唐吉龙, 王新伟, 王晓华, 李永峰, 姚斌, 魏志鹏 2018 中国激光 45 0603002 Xia N, Fang X, Rong T Y, Wang D K, Fang D, Tang J L, Wang X W, Wang X H, Li Y F, Yao B, Wei Z P 2018 Chin. J. Las. 45 0603002
[12]	Glas F, Harmand J C, Patriarche G 2007 Phys. Rev. Lett. 99 146101 Google Scholar
[13]	Hoang T B, Zhou H, Moses A F, Dheeraj D L, Helvoor A, Fimland B O, Weman H 2009 Mater. Res. Soc. Symp. Proc. 1144
[14]	Vainorius N, Jacobsson D, Lehmann S, Gustafsson A, Dick K A, Samuelson L, Pistol M E 2014 Phys. Rev. B 89 165423 Google Scholar
[15]	Kinzel J B, Schülein F J, Weiß M, Janker L, Bühler D D, Heigl M, Rudolph D, Morkötter S, Döblinger M, Bichler M, Abstreiter G, Finley J J, Wixforth A, Koblmüller G, Abstreiter G 2016 ACS Nano 10 4942 Google Scholar
[16]	Senichev A, Corfdir P, Brandt O, Ramsteiner M, Breuer S, Schilling J, Geelhaar L, Werner P 2018 Nano Res. 1 14
[17]	Mukherjee A, Ghosh S, Breuer S, Jahn U, Geelhaar L, Grahn H T 2017 J. Appl. Phys. 117 054308
[18]	Kim H, Ren D, Farrell A C, Huffaker D L 2018 Nanotechnology 29 085601 Google Scholar
[19]	崔建功, 张霞, 颜鑫, 李军帅, 黄永清, 任晓敏 2014 63 136103 Google Scholar Cui J G, Zhang X, Yan X, Li J S, Huang Y Q, Ren X M 2014 Acta Phys. Sin. 63 136103 Google Scholar
[20]	Liu Y, Peng Y, Guo J, La D, Xu Z 2018 AIP Adv. 8 055108 Google Scholar
[21]	Zhou C, Zheng K, Liao Z M, Chen P P, Lu W, Zou J 2017 J. Mater. Chem. C 5 5257 Google Scholar
[22]	Timofeeva M, Bouravleuv A, Cirlin G, Shtrom I, Soshnikov I, Reig Escalé M, Sergeyev A Grange R 2016 Nano Lett. 16 6290 Google Scholar
[23]	Bussone G, Schäfer-Eberwein H, Dimakis E, Biermanns A, Carbone D, Tahraoui A, Geelhaar L, Bolívar P H, Schülli T U, Pietsch U 2015 Nano Lett. 15 981 Google Scholar
[24]	Fontcuberta i Morral A, Colombo C, Abstreiter G, Arbiol J, Morante J R 2008 Appl. Phys. Lett. 92 063112 Google Scholar
[25]	Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E 2010 Nanotechnology 21 435601 Google Scholar
[26]	Ramsteiner M, Brandt O, Kusch P, Breuer S, Reich S, Geelhaar L 2013 Appl. Phys. Lett. 103 043121 Google Scholar
[27]	Jahn U, Lähnemann J, Pfüller C, Brandt O, Breuer S, Jenichen B, Ramsteiner M, Geelhaar L, Riechert H 2012 Phys. Rev. B 85 045323 Google Scholar
[28]	Falcão B P, Leitão J P, Correia M R, Soares M R, Morales F M, Mánuel J M, Garcia R, Gustafsson A, Moreira M V B, de Oliveira A G, González J C 2013 J. Appl. Phys. 114 183508 Google Scholar
[29]	Rudolph D, Schweickert L, Morkötter S, Loitsch B, Hertenberger S, Becker J, Bichler M, Abstreiter G, Finley J J, Koblmüller G 2013 Appl. Phys. Lett. 105 033111
[30]	Varshni Y P 1967 Physica 34 149 Google Scholar
[31]	Chiu Y S, Ya M H, Su W S, Chen Y F 2002 J. Appl. Phys. 92 5810 Google Scholar
[32]	Jin S, Zheng Y, Li A 1997 J. Appl. Phys. 82 3870 Google Scholar
[33]	Fang X, Wei Z P, Chen R, Tang J L, Zhao H F, Zhang L G, Zhao D X, Fang D, Li J H, Fang F, Chu X Y, Wang X H 2015 ACS Appl. Mater. Inter. 7 10331 Google Scholar
[34]	Begum N, Piccin M, Jabeen F, Bais G, Rubini S, Martelli F, Bhatti A S 2008 J. Appl. Phys. 104 104311 Google Scholar
[35]	Spirkoska D, Arbiol J, Gustafsson A, Conesa-Boj S, Glas F, Zardo I, Heigoldt M, Gass M H, Bleloch A L, Estrade S, Kaniber M, Rossler J, Peiro F, Morante J R, Abstreiter G, Samuelson L, Fontcuberta i Morral A 2009 Phys. Rev. B 80 245325 Google Scholar

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