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We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs (0x3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1-xAs/GaAs (0x<1) core-shell nanowires is carried out.
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Keywords:
- GaAs nanowires /
- no catalyst selective-area growth /
- metal organic chemical vapor deposition (MOCVD)
[1] Yang P, Yan P, Fardy M 2010 Nano Lett. 10 1529
[2] Tsakalakos L, Balch J, Fronheiser J, Korevaar B A, Sulima O, Rand J 2007 Appl. Phys. Lett. 91 233117
[3] Zimmler M A, Voss T, Ronning C, Capasso F 2009 Appl. Phys. Lett. 94 241120
[4] Duan X, Huang Y, Agarwal R, Lieber M 2003 Nature 421 241
[5] Ye X, Huang H, Ren X M, Guo J W, Huang Y Q, Wang Q, Zhang X 2011 Acta. Phys. Sin. 60 036103 (in Chinese)[叶显, 黄辉, 任晓敏, 郭经纬, 黄永清, 王琦, 张霞 2011 60 036103]
[6] Plissard S, Larrieu G, Wallart X, Caroff P 2011 Nanotechnology 22 275602
[7] Yan X, Zhang X, Li J S, L X L, Ren X M, Huang Y Q 2013 Chin. Phys. B 22 076102
[8] Lv X L, Zhang X, Yan X, Liu X L, Cui J G, Li J S, Huang Y Q, Ren X M 2012 Chin. Phys. Lett. 29 126102
[9] Mårtensson T, Carlberg P, Borgström M, Montelius L, Seifert W, Samuelson L 2004 Nano Lett. 4 699
[10] Noborisaka J, Motohisa J, Fukui T 2005 Appl. Phys. Lett. 86 213102
[11] Paetzelt H, Gottschalch V, Bauer J, Benndorf G, Wagner G 2008 J. Cryst. Growth 310 5093
[12] Ikejiri K, Noborisaka J, Hara S, Motohisa J, Fukui T 2007 J. Cryst. Growth 298 616
[13] Noborisaka J, Motohisa J, Hara S, Fukui T 2005 Appl. Phys. Lett. 87 093109
[14] Hua B, Motohisa J, Ding Y, Hara S, Fukui T 2007 Appl. Phys. Lett. 91 131112
[15] Yang L, Noborisaka J, Takeda J, Tomioka K, Fukui T 2006 Appl. Phys. Lett. 89 203110
[16] Huang H, Ren X M, Ye X, Guo J, Wang Q, Zhang X, Cai S, Huang Y 2010 Nanotechnology 21 475602
[17] Haas F, Sladek K, Winden A, Ahe M, Weirich T E, Rieger T, Lth H, Schäpers Th, Hardtdegen H 2013 Nanotechnology 24 085603
[18] Borgström M, Deppert K, Samuelson L, Seifert W 2004 J. Cryst. Growth 260 18
[19] Soci C. Bao X, Aplin D, Wang D 2008 Nano Lett. 8 4275
[20] Biegelsen D K, Bringans R D, Northrup J E, Swartz L E 1990 Phys. Rev. Lett. 65 452
[21] Tatematsu H, Sano K, Akiyama T, Nakamura K, Ito T 2008 Phys. Rev. B 77 233306
[22] Jin M T, Shu H B, Liang P, Cao D, Chen X S, Lu W 2013 J. Phys. Chem. C 177 23349
[23] Goto H, Nosaki K, Tomioka K, Hara S, Hiruma K, Motohisa J, Fukui T 2009 Appl. Phys. Express 2 035004
[24] Kim Y, Joyce J, Gao Q, Tan H, Jagadish C, Paladugu M, Zou J, Suvorova A A 2006 Nano Lett. 6 599
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[1] Yang P, Yan P, Fardy M 2010 Nano Lett. 10 1529
[2] Tsakalakos L, Balch J, Fronheiser J, Korevaar B A, Sulima O, Rand J 2007 Appl. Phys. Lett. 91 233117
[3] Zimmler M A, Voss T, Ronning C, Capasso F 2009 Appl. Phys. Lett. 94 241120
[4] Duan X, Huang Y, Agarwal R, Lieber M 2003 Nature 421 241
[5] Ye X, Huang H, Ren X M, Guo J W, Huang Y Q, Wang Q, Zhang X 2011 Acta. Phys. Sin. 60 036103 (in Chinese)[叶显, 黄辉, 任晓敏, 郭经纬, 黄永清, 王琦, 张霞 2011 60 036103]
[6] Plissard S, Larrieu G, Wallart X, Caroff P 2011 Nanotechnology 22 275602
[7] Yan X, Zhang X, Li J S, L X L, Ren X M, Huang Y Q 2013 Chin. Phys. B 22 076102
[8] Lv X L, Zhang X, Yan X, Liu X L, Cui J G, Li J S, Huang Y Q, Ren X M 2012 Chin. Phys. Lett. 29 126102
[9] Mårtensson T, Carlberg P, Borgström M, Montelius L, Seifert W, Samuelson L 2004 Nano Lett. 4 699
[10] Noborisaka J, Motohisa J, Fukui T 2005 Appl. Phys. Lett. 86 213102
[11] Paetzelt H, Gottschalch V, Bauer J, Benndorf G, Wagner G 2008 J. Cryst. Growth 310 5093
[12] Ikejiri K, Noborisaka J, Hara S, Motohisa J, Fukui T 2007 J. Cryst. Growth 298 616
[13] Noborisaka J, Motohisa J, Hara S, Fukui T 2005 Appl. Phys. Lett. 87 093109
[14] Hua B, Motohisa J, Ding Y, Hara S, Fukui T 2007 Appl. Phys. Lett. 91 131112
[15] Yang L, Noborisaka J, Takeda J, Tomioka K, Fukui T 2006 Appl. Phys. Lett. 89 203110
[16] Huang H, Ren X M, Ye X, Guo J, Wang Q, Zhang X, Cai S, Huang Y 2010 Nanotechnology 21 475602
[17] Haas F, Sladek K, Winden A, Ahe M, Weirich T E, Rieger T, Lth H, Schäpers Th, Hardtdegen H 2013 Nanotechnology 24 085603
[18] Borgström M, Deppert K, Samuelson L, Seifert W 2004 J. Cryst. Growth 260 18
[19] Soci C. Bao X, Aplin D, Wang D 2008 Nano Lett. 8 4275
[20] Biegelsen D K, Bringans R D, Northrup J E, Swartz L E 1990 Phys. Rev. Lett. 65 452
[21] Tatematsu H, Sano K, Akiyama T, Nakamura K, Ito T 2008 Phys. Rev. B 77 233306
[22] Jin M T, Shu H B, Liang P, Cao D, Chen X S, Lu W 2013 J. Phys. Chem. C 177 23349
[23] Goto H, Nosaki K, Tomioka K, Hara S, Hiruma K, Motohisa J, Fukui T 2009 Appl. Phys. Express 2 035004
[24] Kim Y, Joyce J, Gao Q, Tan H, Jagadish C, Paladugu M, Zou J, Suvorova A A 2006 Nano Lett. 6 599
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