Tunable terahertz absorber based on complementary graphene meta-surface

Zhang Hui-Yun; Huang Xiao-Yan; Chen Qi; Ding Chun-Feng; Li Tong-Tong; Lü Huan-Huan; Xu Shi-Lin; Zhang Xiao; Zhang Yu-Ping; Yao Jian-Quan

doi:10.7498/aps.65.018101

Abstract

Recently, metamaterials have attracted considerable attention because of their unique properties and potential applications in many areas, such as in bio-sensing, imaging, and communication. Among these researches, the metamaterial absorber has aroused much interest of researchers. The metamaterial absorber is important due to a broad range of potential application to solar energy, sensing, coatings for reducing the reflection, and selective thermal emitters. As a two-dimensional honeycomb structure composed of a single layer carbon atom, graphene is a promising candidate for tuning metamaterials and plasmonic structures due to its unique properties which differ substantially from those of metal and semiconductors. In this paper, we propose a tunable terahertz absorber based on graphene complementary metamaterial structure by removing periodic cut-wires on the graphene meta-surface. On the basis of the tunability of graphene conductivity, the absorber possesses a frequency tunable characteristic resulting from the change of graphene Femi level by altering the applied voltage. Here, we mainly study the influences of Fermi level of graphene and the size of the structure on the absorption characteristic of this metamaterial absorber. We finally obtain the corresponding Femi level and structural size under the perfect absorption condition. In addition, we utilize the multiple reflection theory to explore the physical mechanism, and verify the feasibility of the simulation method at the same time. The research indicates that the absorber can achieve 99.9% perfect absorption at 1.865 THz when the graphene Femi level is 0.6 eV, the thickness of substrate is 13 m, and the length and width of slit are 2.9 m and 0.1 m, respectively. When graphene Femi level increases from 0.4 eV to 0.9 eV, the resonance frequency of the absorber is blue-shifted from 1.596 THz to 2.168 THz. Meanwhile, the absorption rate increases from 84.68% at 0.4 eV to a maximum value of 99.9% at 0.6 eV, then gradually decreases to 86.63% at 0.9 eV. The maximum modulation of the absorption rate is 84.55% by varying the Femi level. When the thickness of substrate increases, the resonant frequency is red-shifted. The resonant frequency is blue-shifted when both the width and the length of the cut-wire on graphene increase. On the basis of the proposed graphene meta-surface absorber, one can gain different resonant frequencies by adjusting the structure geometric size and graphene Femi level. The graphene complementary structure can also be designed into different patterns to achieve the purpose of practical application.

Keywords:

Authors and contacts

1.
Qingdao Key Laboratory of Terahertz Technology, College of Electronic, Communication and Physics, Shandong University of Science and Technology, Qingdao 266590, China;
2.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China;
3.
Institute of Laser and OptoElectronics, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China

Corresponding author: Zhang Hui-Yun, sdust_thz@126.com;qchen1103@163.com ; Chen Qi, sdust_thz@126.com;qchen1103@163.com ;

Funds: Project supported by the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FM011), the Qingdao City Innovative Leading Talent Plan, China (Grant No. 13-CX-25), the CAEP THz Science and Technology Foundation (Grant No. 201401), the Science and Technology Project of Qingdao Economic and Technical Development Zone, China (Grant No. 2013-1-64), and the China Scholarship Council.

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[28]	Xu B Z, Gu C, Li Z 2013 Opt. Express 21 23803
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Cited By

[1]	Landy N I, Sajuyigbe S, Mock J J, Smith D R, Padilla W J 2008 Phys. Rev. Lett. 100 207402
[2]	Zhang X C 2002 Phys. Med. Biol. 47 3667
[3]	Yahiaoui R, Guillet J P, Miollis F D, Mounaix P 2013 Opt. Lett. 38 4988
[4]	Alves F, Grbovic D, Keaney B, Lavrik N V, Karunasiri G 2013 Opt. Express 21 13256
[5]	Tao H, Landy N I, Bingham C M, Zhang X, Averitt R D, Padilla W J 2008 Opt. Express 16 7181
[6]	Wen Q Y, Zhang H W, Xie Y S, Yang Q H, Liu Y L 2009 Appl. Phys. Lett. 95 241111
[7]	Ma Y, Chen Q, Grant J, Saha S C, Khalid A, Cumming D R S 2011 Opt. Lett. 36 945
[8]	Wen Y Z, Ma W, Bailey J, Matmon G, Yu X M, Aeppli G 2013 Appl. Opt. 52 4536
[9]	Ma Y B, Zhang H W, Li Y X, Wang Y C, Lai W E, Li J 2014 Chin. Phys. B 23 058102
[10]	Shen X P, Yang Y, Zang Y Z, Gu J Q, Han J G, Zhang W L, Cui T J 2012 Appl. Phys. Lett. 101 154102
[11]	Gu C, Qu S B, Pei Z B, Xu Z, Liu J, Gu W 2011 Chin. Phys. B 20 017801
[12]	Dai Y H, Chen X L, Zhao Q, Zhang J H, Chen H W, Yang C R 2013 Acta Phys. Sin. 62 064101 (in Chinese) [戴雨涵, 陈小浪, 赵强, 张继华, 陈宏伟, 杨传仁 2013 62 064101]
[13]	Mo M M, Wen Q Y, Chen Z, Yang Q H, Li S, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 237801 (in Chinese) [莫漫漫, 文岐业, 陈智, 杨青慧, 李胜, 荆玉兰, 张怀武 2013 62 237801]
[14]	Ma Y, Chen Q, Grant J, Saha S, Khalid A, Cumming D R S 2011 Opt. Lett. 36 3476
[15]	Ye Y Q, Jin Y, He S L 2010 J. Opt. Soc. Am. B 27 498
[16]	Wang B X, Wang L L, Wang G Z, Huang W Q, Li X F, Zhai X 2014 IEEE Photon. Technol. Lett. 26 111
[17]	Huang L, Chowdhury D R, Ramani S, Reiten M T, Luo S N, Taylor A J, Chen H T 2012 Opt. Lett. 37 154
[18]	Wen Y Z, Ma W, Bailey J, Matmon G, Yu X M, Aeppli G 2014 Opt. Lett. 39 1589
[19]	Liu C, Ye J, Zhang Y 2010 Opt. Commun. 283 865
[20]	Zhou H, Ding F, Ji Y, He S L 2011 Prog. Electromagn. Res. 119 449
[21]	Hu F R, Qian Y X, Li Z, Niu J H, Nie K, Xiong X M, Zhang W T, Peng Z Y 2013 J. Opt. 15 055101
[22]	Alaee R, Farhat M, Rockstuhl C, Lederer F 2012 Opt. Express 20 28017
[23]	Andryieuski A, Lavrinenko A V 2013 Opt. Express 21 9144
[24]	VasićB, GajićR 2013 Appl. Phys. Lett. 103 261111
[25]	Woo J M, Kim M S, Kim H W, Jang J H 2014 Appl. Phys. Lett. 104 081106
[26]	Amin M, Farhat M, Bağci H 2013 Opt. Express 21 29938
[27]	He S, Chen T 2013 IEEE Trans. Terahertz Sci. Technol. 3 757
[28]	Xu B Z, Gu C, Li Z 2013 Opt. Express 21 23803
[29]	Wu B, Tuncer H M, Naeem M, Yang B, Cole M T, Milne W I, Hao Y 2014 Sci. Rep. 4 4130
[30]	Zhu Z H, Guo C C, Zhang J F, Liu K, Yuan X D, Qin S Q 2015 Appl. Phys. Express 8 015102
[31]	Zhang Y, Feng Y, Zhu B, Zhao J, Jiang T 2014 Opt. Express 22 22743
[32]	Zhang Y P, Li T T, L H H, Huang X Y, Zhang X, Xu S L, Zhang H Y 2015 Chin. Phys. Lett. 32 068101
[33]	Fan Y, Shen N H, Koschny T, Soukoulis C M 2015 ACS Photon. 2 151
[34]	Chen H T 2012 Opt. Express 20 7165
[35]	Hanson G W 2008 J. Appl. Phys. 103 064302
[36]	Gusynin V P, Sharapov S G, Carbotte J P 2007 J. Phys. Condens. Matter 19 026222
[37]	Yao Y, Kats M A, Genevet P, Yu N, Song Y, Kong J, Capasso F 2013 Nano Lett. 13 1257
[38]	Wunsch B, Stauber T, Sols F, Guinea F 2006 New J. Phys. 8 318
[39]	Hwang E H, Sarma S D 2007 Phys. Rev. B 75 205418

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Vol. 65, Issue 1 - 2016-01-05

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