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The photo-induced phenomenon in the silicon nanowires made by chemical etching in HF/Fe(NO3)3 solution is investigated systematically by using monocrystal n-type silicons with different doping concentrations as substrates, silver as catalyst, and iron nitrates with different concentrations as oxidants. It is found that the length of silicon nanowires is determined not only by the doping concentration of substrate and the mass of oxidant, but also by the photo-induced effect. The prepared silicon nanowires may have potential applications in green energy storage device and the substrate material for sensor. In this paper, we discuss the formation mechanism from the band structure, electrochemical characterization and photoluminescence in depth. The results in this paper provide physical theoretical evidence for the development of the method, and have important guiding significance to promote the technology.
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Keywords:
- silicon nanowires /
- chemical etching /
- photo-induced
[1] Wang Z W, Cai J Q, Wu Y Z, Wang H J, Xu X L 2015 Chin. Phys. B 24 017802
[2] Wang H Y, Li X J 2005 Acta Phys. Sin. 54 2225 (in Chinese) [王海燕, 李新建 2005 54 2225]
[3] Peng K Q, Wang X, Li L, Hu Y, Lee S T 2013 Nano Today 8 75
[4] Xing Y J, Yu D P, Xi Z H, Xue Z Q 2002 Chin. Phys. 11 1047
[5] Shi W S, Peng H Y, Zheng Y F, Wang N, Shang N G, Pan Z W, Lee C S, Lee S T 2000 Adv. Mater. 12 1343
[6] Hu S F, Weng W C, Wan Y M 2004 Solid State Commun. 130 111
[7] Tong H D, Chen S Y, Wiel W G, Carlen E T, Berg A 2009 Nano Lett. 9 1015
[8] Liu L 2015 Sci. China. Tech. Sci. 58 362
[9] Liang L, Xu Q F, Hu M L, Sun H, Xiang G H, Zhou L B 2013 Acta Phys. Sin. 62 037301 (in Chinese) [梁磊, 徐琴芳, 忽满利, 孙浩, 向光华, 周利斌 2013 62 037301]
[10] Liu L, Peng K Q, Hu Y, Wu X L, Lee S T 2014 Adv. Mater. 26 1410
[11] Huang Z P, Fang H, Zhu J 2007 Adv. Mater. 19 744
[12] Gan L, Sun L W, He H P, Ye Z Z 2014 J. Mater. Chem. C 2 2668
[13] Liu L 2014 J. Mater. Chem. C 2 9631
[14] To W K, Tsang C H, Li H H, Huang Z F 2011 Nano Lett. 11 5252
[15] Mitsugi N, Nagai K 2004 J. Electrochem. Soc. 151 G302
[16] Zhu M, Li X H, Li G Q, Chang L Y, Xie C X, Qiu R, Li J W, Huang W H 2014 Acta Phys. Sin. 63 057801 (in Chinese) [朱敏, 李晓红, 李国强, 常利阳, 谢长鑫, 邱荣, 李家文, 黄文浩 2014 63 057801]
[17] Zhu S W, Du J, Wang L, Tu H L 2010 Sci. China Tech. Sci. 53 1060
[18] Chang H, Sun S Q 2014 Chin. Phys. B 23 088102
[19] Canham L T 1990 Appl. Phys. Lett. 5 1046
[20] Wagner J, Alamo J A 1998 J. Appl. Phys. 63 425
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[1] Wang Z W, Cai J Q, Wu Y Z, Wang H J, Xu X L 2015 Chin. Phys. B 24 017802
[2] Wang H Y, Li X J 2005 Acta Phys. Sin. 54 2225 (in Chinese) [王海燕, 李新建 2005 54 2225]
[3] Peng K Q, Wang X, Li L, Hu Y, Lee S T 2013 Nano Today 8 75
[4] Xing Y J, Yu D P, Xi Z H, Xue Z Q 2002 Chin. Phys. 11 1047
[5] Shi W S, Peng H Y, Zheng Y F, Wang N, Shang N G, Pan Z W, Lee C S, Lee S T 2000 Adv. Mater. 12 1343
[6] Hu S F, Weng W C, Wan Y M 2004 Solid State Commun. 130 111
[7] Tong H D, Chen S Y, Wiel W G, Carlen E T, Berg A 2009 Nano Lett. 9 1015
[8] Liu L 2015 Sci. China. Tech. Sci. 58 362
[9] Liang L, Xu Q F, Hu M L, Sun H, Xiang G H, Zhou L B 2013 Acta Phys. Sin. 62 037301 (in Chinese) [梁磊, 徐琴芳, 忽满利, 孙浩, 向光华, 周利斌 2013 62 037301]
[10] Liu L, Peng K Q, Hu Y, Wu X L, Lee S T 2014 Adv. Mater. 26 1410
[11] Huang Z P, Fang H, Zhu J 2007 Adv. Mater. 19 744
[12] Gan L, Sun L W, He H P, Ye Z Z 2014 J. Mater. Chem. C 2 2668
[13] Liu L 2014 J. Mater. Chem. C 2 9631
[14] To W K, Tsang C H, Li H H, Huang Z F 2011 Nano Lett. 11 5252
[15] Mitsugi N, Nagai K 2004 J. Electrochem. Soc. 151 G302
[16] Zhu M, Li X H, Li G Q, Chang L Y, Xie C X, Qiu R, Li J W, Huang W H 2014 Acta Phys. Sin. 63 057801 (in Chinese) [朱敏, 李晓红, 李国强, 常利阳, 谢长鑫, 邱荣, 李家文, 黄文浩 2014 63 057801]
[17] Zhu S W, Du J, Wang L, Tu H L 2010 Sci. China Tech. Sci. 53 1060
[18] Chang H, Sun S Q 2014 Chin. Phys. B 23 088102
[19] Canham L T 1990 Appl. Phys. Lett. 5 1046
[20] Wagner J, Alamo J A 1998 J. Appl. Phys. 63 425
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